1800W, 0.96-1.215GHz, GaN on SiC RF Transistor

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The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations.

Lead-free and ROHS compliant.

Evaluation boards are available upon request.

For additional information on GaN thermal performance refer to the following application note and video.