20W/40W, 48V Dual GaN RF Transistor QPD0211
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The QPD0211 is a dual-path discrete GaN on SiC HEMT in DFN package which operates from 2.5 to 2.7 GHz. The device is a single-stage power amplifier transistor for
Doherty application. QPD0211 can deliver PAVG of 7.6 W at +48 V operation.
Lead-free and RoHS compliant.