2x20W, 48V, 3.4 - 3.8GHz, Dual GaN RF Transistor
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The QPD0305 is a dual-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 3.4 to 3.8 GHz. In each path is a single-stage amplifier transistor.
QPD0305 can deliver PSAT of 22.5 W at +48 V operation through each path.
Lead free and RoHS compliant.
- Operating Frequency Range: 3.4 - 3.8 GHz
- Operating Drain Voltage: +48 V
- Maximum Output Power (PSAT) at 3.6 GHz: 22.5 W Each Path
- Maximum Drain Efficiency at 3.6 GHz: 75.9% Each Path
- Efficiency-Tuned P3dB Gain at 3.6 GHz: 20.0 dB Each Path