2x20W, 48V, 3.4 - 3.8GHz, Dual GaN RF Transistor

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The QPD0305 is a dual-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 3.4 to 3.8 GHz. In each path is a single-stage amplifier transistor.

QPD0305 can deliver PSAT of 22.5 W at +48 V operation through each path.

Lead free and RoHS compliant.

Key Features

  • Operating Frequency Range: 3.4 - 3.8 GHz
  • Operating Drain Voltage: +48 V
  • Maximum Output Power (PSAT) at 3.6 GHz: 22.5 W Each Path
  • Maximum Drain Efficiency at 3.6 GHz: 75.9% Each Path
  • Efficiency-Tuned P3dB Gain at 3.6 GHz: 20.0 dB Each Path