450W, 3.1-3.5GHz, GaN on SiC RF IMFET
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The QPD1017 is a 450 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 3.1 to 3.5 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 ohm in an industry standard air cavity package and is ideally suited for military radar.
Evaluation boards are available upon request.