25W RF GaN Power Amplifier Module 0.5-6.0GHz
Featured Product from Richardson RFPD
The 1219 utilizes 50V GaN on SiC transistors which have lower leakage currents and higher thermal conductivity and is a more reliable technology than GaN on Silicon. An added benefit, 50V devices require about half the input current as their 28V counterparts which reduces power supply cost, size, and weight.
This compact class AB amplifier is suitable for broadband mobile communications, jamming, and product test applications. Control and monitoring includes both discrete and digital RS485 interfaces for
Input Current Monitoring
The module comes with the mating connector/pigtail and optional Control Software is available to optimize module performance out of the box. Heat sink and fan assembly available.