2-6GHz, 35W GaN-on-SiC Power Amplifier IC

Featured Product from Richardson RFPD

More Info Email Supplier Request A Quote

CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier enabling very wide bandwidths to be achieved in a small footprint screw-down package featuring a Copper-Tungsten heat-sink.

Features

  • 50-ohm matched
  • 35 W (CW) typical Pout
  • 27 dB Typical Small Signal Gain
  • 28 V Operation
  • Also available in die form