Drop-in SiC diodes for PFC boost diodes

Featured Product from Richardson RFPD


The simplest way to benefit from SiC diodes is as a drop-in replacement for a PFC boost diode. See how easy and beneficial it is in this short video.

Simply put, silicon carbide (SiC) outperforms silicon (Si) at higher voltages. Due to differences in material properties, SiC can be used to enable unipolar Schottky diodes for voltages where Si is restricted to bipolar devices. These unipolar devices have lower switching losses, resulting in more efficient power conversion systems than are capable with silicon diodes.

One of the biggest benefits of the SiC Schottky diode is that it provides an excellent gateway to the benefits of using SiC. Selecting a SiC Schottky diode as a drop-in replacement for a Si PIN will result in immediate gains in efficiency, as well as lower operating temperatures without requiring any additional system modification. The more enterprising design engineer willing to redesign their system around SiC Schottky diodes can take advantage of the higher frequency and temperature capabilities to create a system that is smaller, cooler, faster, and lower cost than possible with Si bipolar devices.

In addition to the benefits of SiC, Wolfspeed diodes offer several key benefits:

1. Based on a Merged PIN Schottky ( MPS) process, our Wolfspeed diodes enable drastically higher forward surge capability and lower reverse leakage. This design is more robust and more reliable than a standard Schottky design.

2. Wolfspeed engineers are here to help you design with SiC. Our team has more than 25 years of experience with SiC devices, and we were one of the first to offer a commercial SiC device. We have a vast library of reference designs, SPICE models, and technical articles to help you get started or to solve the most complex of design problems.

3. Our record of quality speaks for itself. Our SiC MPS diodes have more than two trillion field device hours,with a combined failure-in-time (FIT) rate of significantly less than one per billion fielded de vice hours. Silicon devices cannot come close to this value, and neither can most of our competitors.