Dual SiC MOSFET Driver Reference Design

Featured Product from Richardson RFPD


Design is optimized to drive SiC devices at a high speed with desaturation protection

 

February 27, 2016 – Geneva, Ill.: Richardson RFPD, Inc. announced today the availability and full design support capabilities for a new SiC MOSFET driver reference design from Microsemi Corporation.

 

The MSCSICMDD/REF1 is designed to provide a reliable reference driver solution, a means of evaluating silicon carbide MOSFETs in a number of different topologies, as well as a means to assess device performance for parametric test purposes. The new evaluation board requires only a +24 V power input and is optimized to drive SiC devices at a high speed with desaturation protection. It is a base design that can be simplified depending upon the individual system requirements.

 

According to Microsemi, additional key features of the MSCSICMDD/REF1 include:

 

  • Adjustable -5 V to +20 V output gate drive

  • Galvanic isolation of more than 2000 V on both gate drivers

  • Capable of 6 W of gate drive power per side; 8 W with modification

  • Peak output current of up to 30 A

  • Maximum switching frequency greater than 400 KHz

  • Single-ended or RS485/RS422 differential input gate control

  • Shoot through (short-circuit) protection

  • +/- 100 kV/µS capability

  • Programmable dead time protection

  • Fault signaling

  • Under-voltage lockout protection

     

To find more information, or to purchase this product today online, please visit the MSCSICMDD/REF1 webpage. The device is are also available by calling 1-800-737-6937 (within North America); or please find your local sales engineer (worldwide) at Local Sales Support. To learn about additional products from Microsemi, please visit the Microsemi storefront webpage