GaN Systems 100V Enhancement Mode GaN Transistor

Featured Product from Richardson RFPD

The GaN Systems GS-010-120-1-P is an enhancement mode GaN-on-Silicon power transistor available from Richardson RFPD. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS-010-120-1-P is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

  • Ultra-low FOM Island Technology® die

  • Low inductance GaNPX® package

  • Easy gate drive requirements

  • Transient tolerant gate drive (-20V to +7V)

  • Very high switching frequency (> 10 MHz)

  • Fast and controllable fall and rise times

  • Reverse current capability

  • Zero reverse recovery loss

  • Small 7.6 x 4.6 mm2 PCB footprint

  • Dual gate pads for optimal board layout

  • RoHS 6 compliant


  • 48V Automotive

  • High efficiency power conversion

  • High density power conversion

  • Energy Storage Systems

  • AC-DC Converters (secondary side)

  • ZVS Phase Shifted Full Bridge

  • Half Bridge topologies

  • Synchronous Buck or Boost

  • Uninterruptable Power Supplies

  • Industrial Motor Drives

  • Fast Battery Charging

  • Class D Audio amplifiers

  • Traction Drive