Industry's lowest Rds(on) 1200V SiC MOSFET

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Wolfspeed C3M0016120K available from Richardson RFPD

Wolfspeed extends its leadership in SiC technology by introducing the industry’s lowest Rds(on) SiC MOSFET at 1200V in a discrete package.  Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features the lowest available on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers. 

Features

  •  Minimum of 1200V Vbr across entire operating temperature range [-40C – 175C]
  • +15V gate drive

  • New low-impedance package with driver source

  • > 8mm of creepage/clearance between drain and source

  • High-speed switching with low output capacitance

  • High blocking voltage with low RDS(on)

  • Fast intrinsic diode with low reverse recovery (Qrr)

  • Easy to parallel and simple to drive

Target Applications:

  •  solar energy systems
  • EV-Charging

  • Uninterruptible power supply (UPS)

  • SMPS

  • Motor Control and Drives

  • Energy storage