NXP GaN HEMT for 5G mMIMO and Active Antennas

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NXP helps expand 5G coverage with new family of RF Power transistors for Massive MIMO

With this launch, NXP’s discrete massive MIMO portfolio now covers all cellular frequency bands from 2.3 to 4.0 GHz, leveraging NXP’s latest proprietary GaN technology, manufactured in its new fab in Chandler, AZ. The portfolio includes driver and final stage transistors that enable engineers to create base stations that are smaller, lighter and easier to deploy and conceal, in both urban and suburban areas.

KEY FEATURES
  • Peak power levels of 47.4dBm (55 W) and 50.4dBm (110 W), typically addressing 64T64R and 32T32R radio unit configurations
  • NXPs proprietary RF GaN technology, developed and manufactured in NXP’s GaN fab in Chandler, Arizona
  • Most transistors share the same DFN 7 x 6.5 package.
BENEFITS
  • High efficiency GaN devices for optimal power consumption and lower radio unit size and weight
  • NXP’s low-memory effect RF GaN technology is designed to maximize linearity and reduce DPD complexity
  • Portfolio includes 48 V GaN universal broadband drivers, allowing for single supply lineup voltage
  • Pin-to-pin compatibility across power and frequency bands for design reuse