New 18W X-Band GaN-on-SiC MMIC Amplifier from UMS
Featured Product from Richardson RFPD
The CHA8612-QDB/20 is manufactured with a GaN-on-SiC process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
FEATURES
- High output power: 18 W
- High PAE: 40%
- Linear gain: 26 dB
- DC bias: Vd=30 V @ IDQ=680 mA
- MSL 3
APPLICATIONS
It is designed for a wide range of applications, from military to commercial radar and communication systems.
