NXP’s RF power macro GaN portfolio includes high power RF transistors designed for Remote Radio Heads (RRH) in cellular base stations. These devices are designed for 40 W to 80 W radio units targeting 4T4R and 8T8R infrastructures.
Features
- Common package across frequency bands: OM-780-4S4S over-molded plastic package?
- High impedances for optimal broadband performance?
- Designed in asymmetric Doherty configuration for high-efficiency performance?
- Able to withstand extremely high output VSWR and broadband operating conditions?
- Low-memory GaN improved Error Vector Magnitude (EVM) with Digital Pre-Distortion (DPD) for high linearity of the RF signal
- Based on NXP’s low memory GaN process
- Manufactured in NXP’s Gallium Nitride fab in Chandler, Arizona
RF Power Macro GaN Transistors Portfolio
|
Part Number
|
Frequency Range (MHz)
|
Pout (Avg W)
|
Gain (dB)
|
Supply Voltage (V)
|
Availability
|
|---|---|---|---|---|---|
|
A5G07H800W19NR3
|
717 – 850
|
112
|
19.3
|
50
|
Learn More / Order
|
|
A5G08H800W19NR3
|
865 – 960
|
112
|
19.5
|
50
|
Learn More / Order
|
|
A5G18H610W19NR3
|
1805 – 1880
|
85
|
17.5
|
48
|
Learn More / Order
|
|
A5G19H605W19NR3
|
1930 – 1995
|
85
|
16.7
|
48
|
Learn More / Order
|
|
A5G21H605W19NR3
|
2110 – 2200
|
85
|
16.5
|
48
|
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|
|
A5G26H605W19NR3
|
2496 – 2690
|
85
|
15.3
|
48
|
Learn More / Order
|
