SIC1182K Single-Channel SiC MOSFET Gate Driver

Featured Product from Richardson RFPD


Power Integrations' SIC1182K is a single channel gate driver in an eSOP-R16B package for SiC MOSFETs. Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology. The SIC1182K  boasts the highest peak-output gate current available without an external boost stage. Devices can be configured to support different gate-drive voltage requirements matching the range of requirements seen in SiC-MOSFETs today.

Key applications include UPS, photovoltaic systems, servo drives, welding inverters, and power supplies. The SIC1182K offers up to ±8A output drive current enables the product to drive devices with nominal currents of up to 600A (typical) without a booster stage. The device enables inverters with high system efficiency and allows the production of one design covering their entire portfolio of differently rated power inverters. A switching frequency of up to 150kHz supports multiple applications.

Key Features:

  • Suitable for 600V/650V/1200V SiC MOSFET switches

  • ±8A peak gate output current

  • Integrated FluxLink™ technology providing reinforced isolation

  • Advanced Active Clamping

  • UVLO primary and secondary side

  • Over-current and short circuit current fault turn-off

  • Rail-to-rail stabilized output voltage

  • Unipolar supply voltage for secondary-side

  • Up to 150kHz switching frequency

  • Propagation delay jitter ±5ns

  • -40°C to +125°C operating ambient temperature

  • eSOP package with 9.5mm creepage and clearance

  • Under-voltage lock-out protection for primary and secondary-side including fault feedback

  • Over-current detection for SiC MOSFETs with current-sense terminal

  • Turn off over-voltage limitation (Advanced Active Clamping)

  • 100% production partial discharge & HIPOT compliance testing

 Applications:

  • Photovoltaics
  • General Purpose and Servo Drives
  • UPS and PV
  • Welding Inverters