SiC SP3 Module Driver Reference Design

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Microsemi's MSCSICSP3/REF2 reference design from Richardson RFPD provides an example of a highly isolated SiC MOSFET dual-gate driver for the SiC SP3 phase leg modules. It can be configured by switches to drive in a half bridge configuration with only side on at any time and with dead time protection. It can also be configured to provide concurrent drive, if necessary. This design is intended for use with Microsemi SiC SP3 modules.

Key features of this half-bridge module driver solution compatible with SP3F standard modules:

  • 400 kHz maximum switching frequency
  • 16 W of gate drive power per side
  • 30 A peak output current
  • -5 V/+20 V gate drive voltage
  • ± 100 kV/us capability
  • Galvanic isolation of more than 2000 V on both gate drivers