Small Form Factor Gate Drivers for GaN and SiC

Featured Product from Richardson RFPD


Analog Devices introduced its ADuM4120 and ADuM4121 small form factor isolated gate drivers designed for the higher switching speeds and system size constraints required by power switch technologies such as SiC (Silicon Carbide) and GaN (Gallium Nitride), while still providing reliable control over switching characteristics for IGBT (insulated gate bipolar transistor) and MOSFET (metal oxide semiconductor field effect transistor configurations. The ADuM4120 and ADuM4121 series leverages ADI’s proven iCoupler® isolation technology combined with high speed CMOS and monolithic transformer technology to enable ultra-low propagation delay without sacrificing common mode transient immunity (CMTI) performance.

While legacy alternatives such as optocouplers or pulse transformers struggle to deliver shorter delay and maintain CMTI performance, the robust ADuM4120 and ADuM4121 are purposely designed to enable the higher switching speeds of the new inverter architectures. In systems requiring multiple power switches, these small SOIC packaged isolated gate drivers minimize PCB layout space subsequently reducing cooling requirements. Additionally, their small size allows the gate drivers to be located close to the power switches to reduce the parasitic inductance between the driver and the switch. Operating over a high temperature range and high working voltages, the ADuM4120 and ADuM4121 are ideal for improving the energy efficiency and timing performance stability of solar inverters, motor controllers, and industrial inverter applications.