Wolfspeed introduces first 1000V SiC MOSFET

Featured Product from Richardson RFPD

Wolfspeed has introduced a 1000V silicon carbide MOSFET that enables a reduction in overall system cost, while improving system efficiency and decreasing system-size. Available from Richardson RFPD, the new MOSFET (part number: C3M0065100K)  is specially optimized for fast charging and industrial power supplies, enables a 30% reduction in component-count while achieving more than 3x increase in power density and a 33% increase in output power.

Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the 1000 Vds rating of the SiC MOSFET. The increase in output power in a reduced footprint is realized by the ultra-low output capacitance (as low as 60pF) which significantly lowers switching losses. This device enables operations at higher switching frequencies, which shrinks the size of the resonant tank elements and decreases overall losses, thus reducing heatsink requirements. Wolfspeed has determined these proof-points by constructing a 20kW full-bridge resonant LLC converter and comparing it to a market-leading 15kW silicon system.

The new 1000V, 65mOhm MOSFET is available in a through-hole, 4L-TO247 package and is listed as part number C3M0065100K. Wolfspeed plans to release another 1000V MOSFET in a 4L-TO247 package at 120mOhm (C3M0120100K) in the coming weeks. This package has a Kelvin-source connection that allows engineers to create designs that maximize the benefits of SiC’s superior speed and efficiency.

The surface-mount versions of these devices, C3M0065100J and C3M0120100J, will be released later this year. Like the 4L-TO247, the surface mount devices include a Kelvin-source pin to help minimize gate-ringing and reduce system losses.


  • New C3M SiC MOSFET technology
  • Optimized package with separate driver source pin
  • 8mm of creepage distance between drain and source
  • High blocking voltage with low on-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant


  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency


  • Renewable energy
  • EV battery chargers
  • High voltage DC/DC converters
  • Switch Mode Power Supplies