The ON Semiconductor 12A02MH is a top-tier PNP bipolar RF transistor designed for superior performance in various applications. With a maximum collector current (IC) of 1000 milliamps and a collector-emitter voltage (VCEO) of 12 volts, this transistor ensures reliable and efficient operation.

Key Features:

• High fT: Boasting a frequency transition (fT) of 450 MHz, this transistor is ideal for RF applications requiring rapid signal processing.
• Powerful hfe: With a high current gain (hfe) of 300, it provides excellent signal amplification capabilities.
• Robust Design: The transistor can withstand temperatures up to 150°C (302°F), ensuring stability in demanding environments.
• Compact Power Dissipation: With a power dissipation (PD) of 600 milliwatts, it offers a balance of power and efficiency.

Applications: The ON Semiconductor 12A02MH is suitable for a wide range of RF applications, including but not limited to:

• Radio Frequency Amplification
• Wireless Communication Systems
• RF Signal Processing Circuits

Invest in Excellence with 12A02MH for Unmatched RF Performance!