The AMB AlN Ceramic Substrate is a high-performance solution tailored for the rapidly advancing field of power electronics. With exceptional bonding strength and thermal cycling capabilities, this substrate is becoming essential for high-power devices, particularly in IGBT modules.

Key Features:

• Thermal Cycling: Capable of withstanding 500 temperature cycles (-40°C to 155°C)
• Current Capacity: Supports currents greater than 300 A
• Bonding Process: Utilizes active metal welding to bond multilayer oxygen-free copper to silicon nitride ceramics
• Vertical Interconnection: Features copper column welding for effective vertical interconnection
• Applications:
  • Electric Vehicles
  • Aerospace
  • Power Electronics
  • Rail Transit
  • Wind, Solar, Heat Pump, Hydropower, Biomass Energy
  • Green Building
  • New Energy Equipment

Special Advantages:

• Reliability: Enhanced reliability and miniaturization for IGBT modules
• Versatility: Increasing use in various critical sectors, including renewable energy and transportation

The AMB AlN Ceramic Substrate stands out for its robust performance and versatility, making it a key material for modern power electronics and energy applications.