Gallium-nitride (GaN) High Electron Mobility Transistor (HEMT)
Featured Product from Wolfspeed
Wolfspeed, a Cree Company, has extended its family of 50 V transistors and introduced an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The device was engineered for the growing ultra-high frequency (UHF) radar market, in which defense, public safety and land mobile radio applications seek to upgrade performance and component lifecycle availability by implementing GaN RF power devices. The new UHF GaN RF device delivers greater power density and output power than competing Si LDMOS devices, enabling radar applications to benefit from greater range within the same design footprint.
The new device, CGHV40180, is available in flange and pill package styles and designed to optimize performance for radar power amplifiers, as well as military communications applications from 20 – 1000 MHz. These additional applications include very-high frequency (VHF) and UHF public safety radios and UHF tactical radios. At 250W typical output power, the new device delivers up to 67% mre continuous wave (CW) power than traditional Si devices in the same size package, providing significantly more signal range for greater detection and discrimination capabilities that are critical to defense and public safety.
The CGHV40180 features the industry’s highest output power in its class with 270W CW typical output power from 800 – 1,000 MHz. The device also offers low power consumption with 75 percent drain efficiency. GaN HEMTs deliver high efficiency, high gain and wide bandwidth capabilities, making the CGHV40180 ideal for linear and compressed amplifier circuits.