Product Announcements:
Metal-Oxide Semiconductor FET (MOSFET)

New 4th Generation SiC MOSFETs Featuring the Industry’s Lowest ON Resistance Read more...

Next-generation GaN technology targets automotive, 5G and datacenter applications. Devices available packaged in TO-247 and innovative Copper Clip SMD.
To learn more about our GaN technology, including demonstrators of CCPAK in action, and live sessions addressing the most common design challenges, register to attend the Nexperia Power Live Event on 2 – 3 July Read more...

This year Nexperia announced a partnership with the automotive engineering consulting company, Ricardo, to produce a technology demonstrator for an EV inverter based on gallium nitride (GaN) technology.
Nexperia's Power Live Event (July 2) will feature a live panel discussion in which both teams talk about the technology and their experiences in developing the first GaN based trac... Read more...

Nexperia’s GaN-on-silicon FET technology at 650 V offers superior performances benefits such as faster switching and ultra-low reverse recovery charge, high threshold voltage capability, supreme robustness and reliability with 800 V transient over-voltage, and qualified to AEC-Q101. Ideal for xEV and telecommunication infrastructure applications and ready for volume production. Read more...

Nexperia’s smallest MOSFET package DFN0606 provides the most minute DFN solution in today's commonly used pitch size of 0.35 mm. An ideal replacement solution where space is paramount, this ultra-small package offers significant space efficiency whilst providing minimal efforts on assembly adjustment. Ultra-small footprint of 0.62 x 0.62 mm with both N- and P- Channel options. Read more...

The charger market is moving towards maximized power density and unification enabled by the so called USB-PD protocol. With more devices switching to USB charging, the power delivery adoption is growing. Read more...

Recognised as the industry-leader in low voltage, low RDS(on) devices, the new PSMNR51-25YLH sets a new standard of 0.57mΩ at 25V, housed in LFPAK56 (Power-SO8) Utilising Nexperia’s unique NextPowerS3 technology, this market-leading performance is offered without compromising other important parameters such as maximum drain current (ID), Safe Operating Area (SOA) or gate char... Read more...

Wolfspeed presents a new high-performance, low-cost, compact 3-phase inverter based on next generation power modules which are specifically optimized to fully utilize Wolfspeed’s third generation of Silicon Carbide (SiC) MOSFETs.  Read more...

Vishay Siliconix SiRA20DP TrenchFET Gen IV N-Channel MOSFET Increases Power Density While Cutting Condition Power Loss Read more...

Designed to attend to the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low power SMPS market, addressing a range of applications, such as lighting, smart meter, mobile phone charger or notebook adapter, as well as AUX power supply and industrial SMPS. Read more...