Product Announcements:
Metal-Oxide Semiconductor FET (MOSFET)

Nexperia announced volume availability of its second-generation 650 V power GaN FET device family, offering significant performance advantages over previous technologies and competitive devices. Read more...

Vishay Siliconix New AEC-Q101-qualified P-Channel -80V TrenchFET MOSFET Reduces Energy Waste and Increases Power Density with Industry-Low On-Resistance Read more...

ROHM's AEC-Q101 automotive MOSFETs that are capable of high-speed switching with low on-resistance. These are highly reliable products that comply with the automotive reliability standard AEC-Q101. An abundant package lineup is available to meet the demands for miniaturization and large currents. Read more...

Next-generation GaN technology targets automotive, 5G and datacenter applications. Devices available packaged in TO-247 and innovative Copper Clip SMD.
Visit our GaN FET website to learn more about our GaN technology, including demonstrators of CCPAK in action. Read more...

Nexperia’s GaN-on-silicon FET technology at 650 V offers superior performances benefits such as faster switching and ultra-low reverse recovery charge, high threshold voltage capability, supreme robustness and reliability with 800 V transient over-voltage, and qualified to AEC-Q101. Ideal for xEV and telecommunication infrastructure applications and ready for volume production. Read more...

Nexperia’s smallest MOSFET package DFN0606 provides the most minute DFN solution in today's commonly used pitch size of 0.35 mm. An ideal replacement solution where space is paramount, this ultra-small package offers significant space efficiency whilst providing minimal efforts on assembly adjustment. Ultra-small footprint of 0.62 x 0.62 mm with both N- and P- Channel options. Read more...

The charger market is moving towards maximized power density and unification enabled by the so called USB-PD protocol. With more devices switching to USB charging, the power delivery adoption is growing. Read more...

Recognised as the industry-leader in low voltage, low RDS(on) devices, the new PSMNR51-25YLH sets a new standard of 0.57mΩ at 25V, housed in LFPAK56 (Power-SO8) Utilising Nexperia’s unique NextPowerS3 technology, this market-leading performance is offered without compromising other important parameters such as maximum drain current (ID), Safe Operating Area (SOA) or gate char... Read more...

Wolfspeed presents a new high-performance, low-cost, compact 3-phase inverter based on next generation power modules which are specifically optimized to fully utilize Wolfspeed’s third generation of Silicon Carbide (SiC) MOSFETs.  Read more...

Designed to attend to the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low power SMPS market, addressing a range of applications, such as lighting, smart meter, mobile phone charger or notebook adapter, as well as AUX power supply and industrial SMPS. Read more...