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  • Characteristics of GaAs Spike Doped Collectors
    Spike-doped collector designs have recently been studied in both Si BJT and GaAs HBTs as a way to improve the device linearity while still maintaining ruggedness. In this work, we present and discuss - for the first time - the very interesting output characteristics of these devices (unique Ic-Vce
  • HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design
    This paper presents a methodology to. characterize and model BJT's mismatch behavior for RFIC design. A measurement technique based on the conventional S-parameter measurement is developed to measure the mismatch behavior at high frequencies (HFs). First, besides the typical de-embedding

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