Military Power MOSFET

Gallium Nitride (GaN) Power FET -- SGF48N10M
from Solid State Devices, Inc.

FEATURES: 4th Generation Gallium Nitride Technology. Exceptionally Low RDSon. Low Qg Simplifies Gate Drive Circuit. Very Fast Switching for High-Freq. Applications. Low Thermal Resistance. Hermetically Sealed Package. Available in Hermetically Sealed, Chip-Scale Package (SMG.3-1) – Consult... [See More]

  • Transistor Grade / Operating Range: Military; Aerospace
  • rDS(on): 0.0080
  • V(BR)DSS: 100
  • IDSS: 0.1000 to 0.6000