High-power applications like electric vehicle (EV) chargers, electric bus chargers, DC-DC converters, solar inverters, and high frequency switch mode power supplies strive to maximize output power efficiency and minimize energy losses and the size/cost of the system. Silicon diodes have filled this role reasonably well. However, as applications increase switching frequencies to achieve efficiency at higher voltages and wider operational temperatures exceeding 150 degrees Celsius (oC) at device junction temperature (Tj), performance of silicon diodes degrade.
SiC Schottky diodes have been developed to address electrification applications above 600 V with higher switching frequencies and linear performance rate to Tj at 175o C. As an example, Microsemi developed and released its next-generation SiC diodes based on a junction barrier Schottky (JBS) structure. With a design ensuring uniform breakdown over the active area, these SiC diodes exhibit avalanche ruggedness beneficial for applications prone to unclamped inductive switching (UIS). While silicon diodes exhibit both capacitive and minority charge during recovery that's dependent on temperature and the diode current and voltage over time (higher losses), SiC diodes exhibit capacitive loss during switching and no side effect during recovery. Furthermore, with added stress under applications at high 200+ A/us, silicon diodes are prone to failure and can exhibit effects of dynamic avalanche. SiC diodes do not have this issue.
Microsemi has released its next-generation 1200 V 10 A, 20 A, and 30 A SiC Schottky barrier diode products, with its 1200 V 15 A as well as its 50 A and 700 V series SiC diodes coming soon. These SiC SBDs offer improved UIS avalanche energy rating up to 20% higher than some SiC competitor devices, and high repetitive surge current ruggedness ideal for electrification applications, including PFC and output rectification in high-voltage HEV/EV charger modules and onboard chargers, DC-DC converters, energy recovery systems, and switch mode power supplies.
- Learn how SiC Schottky diodes are ideal for PFC and output rectification designs in HEV/EV charger, DC-DC converter, inverter, and switch mode power supply applications
- Discover how the SiC Schottky barrier diode product portfolio can meet most applications needs
- Learn that SiC diodes do not exhibit the recovery losses seen in silicon diodes
Jason Chiang has served as a strategic marketing manager for Microsemi Corporation's Discrete Products Group since September 2016. In this role, he is responsible for developing marketing strategies for Silicon Carbide diode/MOSFET solutions for applications including hybrid electric vehicle/electric vehicle (HEV/EV) chargers, electric powertrain/traction control and switch mode power supplies.
Prior to his current role with Microsemi, Chiang served as senior marketing manager, industrial vertical marketing at Microsemi after joining the company in November 2013. He has also held various strategic and product marketing as well as business development roles at Altera before the company was acquired by Intel, P.A. Semi prior to its acquisition by Apple and PMC-Sierra before it was acquired by Microsemi. He holds a bachelor's degree in electrical engineering from Cal Poly, San Luis Obispo.
Dennis Meyer currently serves as a discrete products applications engineer at Microsemi Corporation, where he leverages his more than 30 years' experience in the design of semiconductor and optical test equipment. Prior to joining Microsemi in 2015, he designed large solar power systems at Advanced Energy from 2011-2015.
As an expert in large-scale integration (LSI) test system design, Meyer has worked closely with customers to successfully develop a variety of solutions, including Schlumberger, where he played a key role with timing system design; KLA, with charged coupled device (CCD) camera design; and Credence, with LSI system design and RFIC testing. Meyer has a bachelor's degree in physics from the University of Southern California and a master's degree in electrical engineering from UC Berkeley, where he specialized in GaAs lasers.