Increasingly, more power applications use high voltage GaN transistors to increase power density as well as to reduce system size and cost. However, GaN FETs are fairly new to many engineers. This can lead to general knowledge gaps and misinformation sharing. Importantly, because GaN devices do not perform the same as Silicon devices, their validation testing differs from what is generally understood about Quality + Reliability (Q+R) testing today. It's necessary to understand these differences to accurately determine which GaN FETs to use; appropriate design configurations; and product lifetime-the factor used by product manufacturers to evaluate warranty risks.
This presentation serves as a basic guide to high voltage GaN validation testing and is delivered by the company recognized as today's leader in manufacturing the highest quality, highest reliability GaN FETs. Attendees will walk away with a clear understanding of the five fundamental testing components that equate to a complete Q+R data set:
- JEDEC and AEC-Q101 product qualification
- Extended testing beyond standards such as high voltage switching, SEB, HTOL, HTGB
- Intrinsic/wear-out lifetime including failure modes and acceleration factors
- Extrinsic lifetime including FIT and ppm data
- Field failure rates
- Receive a brief introduction to Transphorm addressing its 650 V and 900 V devices; GaN platform differentiation; and benefits demonstrated by in-production customer end products.
- Learn about what validation tests are used to determine high voltage GaN Q+R and why.
- Learn about how those tests are conducted to ensure results accuracy.
- Gain an understanding of benchmark Q+R results.
- Walk away with a basic guide to GaN Q+R that will serve as an essential resource for future GaN device selection and power system design.
Philip leads Transphorm's global marketing and North American sales strategies driving adoption of high voltage GaN power transistors. He worked previously for Vishay (Siliconix) heading up their high voltage superjunction technology, Microsemi PPG running marketing efforts on their high voltage MOSFET, FRED diodes, IGBTs, and SiC efforts, Medallion Instrumentation Systems and Fairchild Semiconductor. He has expertise in RFID, power supply designed systems and applications, high power semiconductor devices and project management.
Philip holds a MBA (Hons) from I.H. Asper School of Business, University of Manitoba and has a Bachelor of Science in Electrical Engineering, University of Manitoba, and an Electronic Engineering Technology Associate Degree, Red River College. He holds 2 US patents a trade secret and has authored many technical and application papers.
Ron leads the quality and reliability validation initiatives for Transphorm's high voltage GaN power transistors. His team is responsible for defining the company's quality standards as well performing engineering analysis of product reliability test data. Previously, Ron held similar quality and analytics roles at KLA-Tencor and Nanosys. He has also worked at Read-Rite Corporation, Digital Equipment Corporation, Signetics and Fairchild Semiconductor with responsibilities in front end wafer fab engineering and operations.
Ron holds a BS in Chemistry from Syracuse University along with an MBA in Business from Santa Clara University. He is a certified manager of Quality and Organizational Excellence (ASQ CMQ/OE) and a Certified Six Sigma Black Belt (ASQ CSSBB).