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Supplier: Twilight Technology Inc.
Description: and memory module solutions. Our customers benefit from our broad experience and expertise in design, IC packaging, component reliability, and quality testing. With 25 years of design experience, our engineering staff solves problems with footprint conversions, RoHS, BGA and flip chip
- Memory Type: DRAM
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Supplier: InnoDisk USA Corporation
Description: ACTICA provides wide range of DDR2 product with the capacities, ranging from 1GB to 8GB. The DDR2 RDIMMs are validated by the major server motherboard manufacturer to ensure the compatibility of the memory. In additional to that the height of the memory is a good fit for the IU server
- Capacity: 1000 to 2000 MB
- Form Factor: DIMM
- Operating Temperature: 32 to 185 F
- Pin Count: 240 #
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Supplier: InnoDisk USA Corporation
Description: Card and take advantage on this product for space/ airflow and heat optimization. Features Compliant with JEDEC standard RoHS compliant Ver low profile (VLP) at the heitht of 18.75mm Highly reliable - for Mission Critical blade server memory solutions
- Capacity: 2000 to 8000 MB
- Form Factor: DIMM
- Operating Temperature: 32 to 185 F
- Pin Count: 240 #
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Supplier: InnoDisk USA Corporation
Description: Features SSTL_2 Interface 2-bit pre-fetch Double-data-rate architecture Differential clock inputs(CK and CK) Programmable Burst length (2, 4, 8) Programmable Burst type (sequential & interleave) Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh) Serial presence detect with EEPROM TSOP II
- Capacity: 128 to 1000 MB
- Clock Speed: 333 to 400 MHz
- Form Factor: DIMM, SO DIMM
- Memory Type: DRAM
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Supplier: InnoDisk USA Corporation
Description: Features JEDEC standard 1.8V +/- 0.1V Power Supply Frequency:400Mhz,533 Mhz, 667Mhz, 800Mhz Programmable CAS Latency: 3, 4, 5, 6 8 Banks 4-bit pre-fetch Posted CAS Burst Length: 4, 8(Interleave/nibble sequential) Off-Chip Driver(OCD) Impedance Adjustment On Die Termination with selectable values
- Capacity: 256 to 2000 MB
- Clock Speed: 533 to 667 MHz
- Form Factor: DIMM, SO DIMM
- JEDEC Standard Compatible: Yes
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Supplier: Advantech
Description: SQRAM is Industrial Grade DRAM memory. all of SQRAM are designed with original IC chip and adopt a rigorous test program to ensure durable and reliable quality. SQRAM are fixed IC generation for quality and compatibility controlled. 200-pin SODIMM Data transfer rate: 333 MT
- Form Factor: SO DIMM
- Operating Temperature: -4 to 185 F
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Supplier: Utmel Electronic Limited
Description: DRAM Module DDR3 SDRAM 8Gbyte 204SODIMM
- Memory Category: DRAM
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Supplier: Utmel Electronic Limited
Description: DRAM Module DDR3 SDRAM 8Gbyte 240DIMM
- Memory Category: DRAM
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Supplier: Win Source Electronics
Description: Alternative Parts (Cross-Reference): Cross Category: Memory Cards, Modules Packaging: Tray Speed: 2666MT/s
- Memory Category: DRAM
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Supplier: DigiKey
Description: MODUL DDR4 SDRAM 16GB 260SORDIMM
- Capacity: 16000 MB
- Memory Type: DRAM
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Supplier: Shenyang Vhandy Technology Co., Ltd.
Description: can be widely used in automobile, rail vehicle, industry control and others large amount of data and not easy to troubleshoot fault system. Please note: GCAN-401/402/406 CAN recorder maximum support of 32G/128G/128G capacity TF memory card and the file system is FAT32 format, if your TF card
- Memory Type: DRAM
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Supplier: DigiKey
Description: MODULE SDRAM 256MB 168UDIMM
- Capacity: 256 MB
- Form Factor: uDIMM
- Memory Type: DRAM
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Supplier: DigiKey
Description: MODULE DDR SDRAM 256MB 184UDIMM
- Capacity: 256 MB
- Form Factor: uDIMM
- Memory Type: DRAM
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Supplier: DigiKey
Description: MODULE DDR SDRAM 512MB 184RDIMM
- Capacity: 512 MB
- Form Factor: Other
- Memory Type: DRAM
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Supplier: Advanced Micro Devices, Inc.
Description: Get superior stability and excellent performance with AMD Radeon™ memory Get more out of what you’ve already got with an easy, cost-effective memory upgrade from AMD. From browsing the Web and watching brilliant HD streaming video to playing the most demanding video games
- Applications: Personal Computing
- Capacity: 4000 to 16000 MB
- Clock Speed: 1333 to 2400 MHz
- Memory Type: DRAM
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Supplier: SK Hynix
Description: WIO2 (Wide IO 2) is the strong candidate of future mobile DRAM achieving high bandwidth (51.2GB/s, up to 68GB/s), advanced power efficiency, and small form factor.
- Capacity: 64 to 2000 MB
- DRAM Type: DDR SDRAM
- Operating Temperature: -22 to 185 F
- Supply Voltage: 1.2 V, 1.8 V
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Supplier: Avant Technology
Description: Avant Technology is a leading US manufacturer and global provider of DRAM memory modules and Flash sub-assemblies. From the POS and telecommunications sector, to commercial, networking, server and PC industries; Avant memory solutions are designed to fulfill a variety of
- Capacity: 256 MB
- Form Factor: uDIMM
- Memory Type: RAM, DRAM
- Supply Voltage: 3.3 V
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Supplier: SK Hynix
Description: improved features, making DDR4 more capable than the earlier DRAM generations in key attributes. DDR4 is expected to provide stable performance beyond 2400Mbps Normal temperature (0? ~ 95? ), IT (Industrial Temperature : -40? ~ 95?) and AT (Automotive Temperature : -40? ~ 105?) supportable.
- Applications: Personal Computing
- Capacity: 1000 to 8000 MB
- Memory Type: DRAM
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Supplier: Yang Ming International Corporation
Description: DDR3 1333MHz 2GB REG ECC 256X4 M393B5670EH1-CH901 SAMSUNG Original Memory Module
- Capacity: 2000 MB
- Clock Speed: 1333 MHz
- Memory Type: DRAM
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Supplier: Lingto Electronic Limited
Description: MODULE DRAM DDR
- Access Time: 19 ns
- Density: 4.00E6 kbits
- Memory Category: DRAM, Other
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Supplier: Corsair Memory
Description: Great looking, great overclocking memory at a great price Aluminum heatspreaders help dissipate heat and give Vengeance modules an aggressive look. Serious about PC memory? So are we. Like the legendary Dominator, enthusiast-grade Vengeance DRAM is designed for
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Description: DRAM Module DDR4 SDRAM 16Gbyte 3200MT/S 288-Pin RDIMM Tray
- Density: 1.02E9 kbits
- Memory Category: DRAM
- Supply Voltage: Other
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Supplier: Win Source Electronics
Description: Manufacturer: TE Connectivity AMP Connectors Win Source Part Number: 763969-5316437-1 Series: Mini Memory Module (M3) Packaging: Tray Number of Positions: 88 Features: Board Guide, Latches Contact Finish: Gold Contact Finish Thickness: 12µin (0.30µm)
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Supplier: Rochester Electronics
Description: TM124BBK32S - Fast Page DRAM Module, 1MX32, 80ns, CMOS
- IC Package Type: Other
- Logic Family: CMOS 4000
- Memory Category: DRAM
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Supplier: Integrated Device Technology
Description: JEDEC compliant Advanced Memory Buffer for Fully buffered DIMMs. 3.2, and 4.0 Gb/s serial speeds ( DDR2 -533, and 667 DRAM ). Support for up to eight DIMMs per channel.
- Device Type / Applications: Buffer
- IC Package Type: BGA, FCPGA
- Pin Count: 655 #
- TJ: 0.0 to 70 C
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Supplier: Rochester Electronics
Description: TM4100GAD8 - Fast Page DRAM Module, 4MX8, 80ns, CMOS
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Description: 4 Kbit I2C bus / SMBus Serial EEPROM, SPD for DRAM Modules (DDR4)
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Supplier: Win Source Electronics
Description: Memory Size: 4GB Flash, 1GB DRAM Antenna Type: Antenna Not Included, Castellation Power - Output: 15dBm Sensitivity: -97dBm RF Family/Standard: Bluetooth, WiFi Serial Interfaces: I²C, I²S, JTAG, SPI, UART, USB Voltage - Supply: 3.7V ~ 5V Package / Case: Module
- Form Factor / Package: Surface Mount Technology (SMT), Other
- Function: Transceiver
- Operating Frequency: 2400 MHz
- Operating Temperature: 0.0 to 85 C
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Supplier: Acromag, Inc.
Description: available for front mezzanine 64 I/O lines supported with direct connection to FPGA via rear (J4) connector FPGA code loads from PCI bus or flash memory 256K x 36-bit dual-ported SRAM 32Mb x 32-bit DDR DRAM Supports dual DMA channel data transfer to CPU Supports both 5V and 3.3V
- Number of Ports: 64
- PMC Data Bus: 64-bit
- Product Type: FPGA Module, Other
- Technology: PMC
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Supplier: Spectral Dynamics, Inc.
Description: The Model VX2705B is a completely integrated 8 channel data recording VXI module. Each channel includes a low pass filter, a 16-bit 5M Samples/sec/ch. ADC, and 16M Samples of DRAM storage per channel. DRAM may be divided into 2, 4, or 8 segments for multiple event recording.
- Accuracy: 0.1000 % FS
- Analog Input Channels: 8 #
- Application: General Lab and Industrial, Vehicular, Aerospace / Military
- Connection to Host: TTL, Other
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Supplier: Indocomp Systems, Inc.
Description: Features Half-size PCI Bus Compatible Single Board Supports Socket-478 Intel Pentium-M Processors Up to1GB DDR SO-DIMM DRAM cache built-in CPU Integrated 32-bit 3D/2D Gfx with frequency up to 250MHz support CRT, digital video out & LVDS LCD
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Supplier: Microchip Technology, Inc.
Description: is available in a variety of space-saving packaging options with an operating range of 1.7 to 3.6V. The AT34C04 is tailored specifically for DRAM memory modules with Serial Presence Detect (SPD). The device incorporates a Reversible Software Write Protection (RSWP) feature
- Data Rate: 1 MHz
- Density: 4 kbits
- Endurance: 1.00E6 Write/Erase Cycles
- IC Package Type: SOIC, SSOP, Other
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Supplier: Accuris
Description: MICROCIRCUIT MEMORY CMOS, DIGITAL, 256M X 8 BIT STACKED DIE (2GBIT) SYNCHRONOUS DRAM (SDRAM), MODULE
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Supplier: RS Components, Ltd.
Description: The Microchip MCP9843/98242/98243 series of memory module temperature converters with EEPROM have been designed for DRAM DIMMs Serial Presence Detect and have a 2Wire serial interface. The sensors convert temperature between -40°C to +125°C to a digital output and the EEPROM
- Input (Supply) Voltage: 2.7 volts
- Operating Temperature: -40 to 125 C
- Sensor Type: Temperature Sensor
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Description: Low power CMOS and embedded memory, Foundry technology, RF & THz process, device and integration technology, Standalone memory: DRAM, FLASH, emerging memory technology, Advanced process modules: e.g. gate stack, junction, strain/channel engineering, low-R contact,
- Industry: Electronics and Semiconductor, Networking and Computing
- Type: Conference
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memory, DRAM modules and embedded peripheral products for industrial and enterprise applications. About New Yorker Electronics New Yorker Electronics is a certified franchised distributor of electronic components, well known for its full product lines, large inventories and (read more)
Browse Memory Modules Datasheets for New Yorker Electronics Co., Inc. -
and competitive pricing since 1948. It is an AS9120B and ISO 9001:2015 certified source of passive components, discrete semiconductors, electromechanical devices, Flash & DRAM modules, embedded board solutions, power supplies and connectors, and operates exclusively at heightened military and (read more)
Browse Memory Modules Datasheets for New Yorker Electronics Co., Inc. -
Server memory can be confused with the amount of storage space available on a device, which is a common misconception. Increasing the storage capacity of a server does not improve overall performance, but simply allows for more data to be saved. Instead, server memory allows for a (read more)
Browse Serial Servers Datasheets for Advantech -
Kit houses the main communication technology for the internet system including: DDR3 DRAM and 4GB MLC NAND flash memory from Kingston A satellite radio receiver from ST Microelectronics Power management, step-down converters and termination regulators from MPS (read more)
Browse Datasheets for TechInsights Inc. -
Laird Connectivity’s RM1261 and RM1262 series modules are based on Silicon Labs EFR32 series SoC and the Semtech SX126x radio. They provide a low-power, long-range solution for users to easily develop their LoRaWAN implementation. The RM126x series supports Lo (read more)
Browse Memory Modules Datasheets for DigiKey -
u-blox's LARA-R6 series cellular modules feature uncompromised global connectivity in a very small package. The series offers exceptional flexibility with global, regional, and multi-regional variants. The LARA-R6 modules are secure by design and have a comprehensive (read more)
Browse Memory Modules Datasheets for DigiKey -
CMOS wide-angle camera. There is 8 GB mobile DRAM from Samsung and many other electronic components. The following is a partial deep dive into the 12T smartphone from TechInsights. Summary 6.68 inch AMOLD display 8 GB mobile SDRAM (read more)
Browse Product Development Services Datasheets for TechInsights Inc. -
GB 3D TLC NAND flash multichip memory from Kioxia. (Learn more about DRAM memory on Globalspec.com) Power board The power board is the necessary component needed to power the (read more)
Browse Engineering Consulting Services Datasheets for TechInsights Inc. -
GB mobile DRAM from Samsung and many other electronic components. The following is a partial deep dive into the 12T smartphone from TechInsights. Summary 6.68 inch AMOLD display 8 GB mobile SDRAM 20 MP BSI CMOS/108 MP BSI CMOS wide-angle/2 MP CMOS (read more)
Browse Product Development Services Datasheets for TechInsights Inc. -
. The HomePod includes the Apple dual core applications processor and 1 GB of mobile DRAM for higher levels of processing power compared to the original generation. The following is a partial deep dive into the Apple HomePod 2nd Gen conducted by TechInsights. Summary (read more)
Browse Product Development Services Datasheets for TechInsights Inc.
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
modules. DRAM prices keep rising despite dearth of demand Toshiba proposes flash lamp annealing for 65-nm node Flash lamp annealing (FLA) technology will
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
Heard on the Beat (Jan. 25) Heard on the Beat (Jan. 25) Move to faster, more profitable DRAMs goes painfully slow for suppliers SAN JOSE -- It could be another long and miserable year in the poor DRAM industry, based on the consensus and general mood at the Platform Conference here this week
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
Betrayed Infineon to sell shares in ProMOS Claiming it was "betrayed " by Mosel Vitelic Inc. at a shareholders meeting, Infineon Technologies AG said Saturday it will sell its entire 30.7% stake in ProMOS Technologies Inc., its Taiwanese DRAM joint venture, according to a report from National
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
Trying to make sense of the cyclical semiconductor industry? Gathered here is a compendium of recent stories on IC forecasts, August chip data, DRAMs, PCs, and semiconductor equipment. Micrel latest to reduce forecast amid sales lull Chip maker Micrel Inc. on Friday (Oct. 1) lowered its revenue
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Page 59. Semiconductor parts with 400 in root number
4M x 9 CMOS DRAM Memory Module .
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MIMS: Towards a Message Interface Based Memory System
A local buffer scheduler is placed between the on-chip memory controller and DRAM memory modules (or channels).
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MIMS: Towards a Message Interface based Memory System
The scheduler acts as a traditional memory controller: it communicates with the DRAM mem- ory module through wide and relative low frequency bus with the synchronous DDR3 protocol as in the traditional memory system.
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Federal Register > Tuesday, October 19, 1999 > [64 FR 56308] Notice of Final Determination of Sales at Less Than Fair Value: Dynamic Random Access Memory Semic...
The Department is amending the scope of this investigation in order to require importers of motherboards that contain removable DRAM memory modules to certify to U.S. Customs that such modules will not be removed.
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Monolithic Electronic-Photonic Integration in State-of-the-Art CMOS Processes
DRAM memory modules are divided into two main sections: the storage array and peripheral access devices.
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Circuit-Switched Memory Access in Photonic Interconnection Networks for High-Performance Embedded Computing
In particular, we propose the adoption of circuit-switched NoC architectures that rely on a simple mech- anism to switch circuit paths off-chip to exchange data with the DRAM memory modules .
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Analysis and prevention of DRAM latch-up during power-on
0in DRAM memory modules with a data bus shared by multiple DRAM chips when the power supply is turned on.
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Strategies to the Prediction Mitigation and Management of Product Obsolescence
In the case of DRAM memory modules , the last-order date data is collected.
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Page 5. Semiconductor parts with 940 in root number
4M x 9 CMOS DRAM Memory Module .
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A Data Mining Based Approach to Electronic Part Obsolescence Forecasting
In the case of DRAM memory modules , the last order date data is collected.