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  • Effects of Deposition Method of PECVD Silicon Nitride as MIM Capacitor Dielectric for GaAs HBT Technology
    Thin silicon nitride (Si3N4) films deposited using plasma-enhanced chemical deposition (PECVD) method have been used as metal-insulator-metal (MIM) capacitor dielectric for GaAs hetero-junction bipolar transistor (HBT) technology. The characteristics of the films, which were deposited at 300oC
  • MICRO: TechEmergent
    cost-effectiveness. As listed in Table I, several potential candidate materials can be used to manufacture DRAM capacitor films with higher dielectric constants than Al . Of these films, Hf is attractive because of its high thermal stability and chemical compatibility with silicon and polysilicon.

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