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  • Effects of Ohmic Metal on Electrochemical Etching of GaAs in pHEMT Manufacturing
    Good ohmic metal contact is crucial for optimum device. performance for Heterojunction Bipolar Transistors (HBT). and pseudomorphic High Electron Mobility Transistors. (pHEMT). Erosion of Gallium Arsenide (GaAs) adjacent to. ohmic structure is a common problem and it is generally. observed
  • RF Power: GaN Moves In for the Kill
    Is gallium nitride (GaN) the wide bandgap material that will turn RF power generation on its head and relegate gallium arsenide (GaAs) and LDMOS (Laterally Diffused Metal Oxide Semiconductor) to the annals of history? Well you'd certainly think so, based on articles in the trade press, symposium
  • MICRO: Industry News
    , are just one of the many optoelectronic and microelectronic RF, microwave, laser, and communications devices made by compound semiconductor manufacturers that use metal-organic chemical vapor deposition (MOCVD) equipment from Veeco and other suppliers. Comparison with the well-established silicon side
  • Society for Information Display News Stories March 2001
    Semiconductive "Nanobelts " Could One-Up Nanotubes as FED Emitters Atlanta, Georgia, March 9 - Researchers have created a new type of nanometer-scale structure that could be the basis for inexpensive ultra-small sensors and flat-panel-display components. Made of semiconducting metal oxides
  • MICRO: Wet Surface Technology
    /oxidation, preepitaxial deposition, post-laser-marking applications, and post chemical-mechanical polishing (CMP) cleaning operations, ultradilute cleaning chemistries are highly efficient at removing submicron surface contamination and trace metallic impurities. Such chemistries reduce metal

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