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  • MICRO: Characterizing CMP
    investigates the impact of polishing pad conditioning on silicon dioxide interlevel dielectric (ILD) and shallow trench isolation (STI) CMP processes. The Role of Pad Conditioning The CMP process requires a polyurethane polishing pad; a slurry composed of abrasive, chemicals, and water; and a wafer
    material to form isolation barriers between device elements. Tight control of isolation critical dimension (CD) and trench depth is required for optimal device performance and for achieving desired yields. While STI CD variation degrades direct drain quiescent current (IDDQ), transistor performance
  • MICRO: STI Process Control
    process variations, oxide thickness in shallow-trench isolation (STI) structures may vary greatly depending on trench width and trench etch uniformity. Conventional methods for measuring oxide-layer thickness involve pointing a small ( <50- um) light spot at a large, nonpatterned wafer area
  • Medical Device Link .
    ). They can be contacted at The historical image of the development scientist has always been one of the lone researcher, working in glorious isolation in his lab. Before 1995, this was actually the case for people developing rapid assays: no real vehicle existed to allow communication between research labs

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