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  • Understanding Capacitive Position Sensors (.pdf)
    Capacitance sensing is a high precision, high bandwidth, non contact displacement measurement method which has been in common use for over 50 years. This white paper describes various characteristics of capacitive sensing, principles of operation, performance characteristics and the fixturing
  • In-Situ Calibration - Methods & Pitfalls of Thermal Mass Flow Meter Sensor Field Validation
    Mid-to-large size facilities and campuses inevitably have hundreds of ow instruments to monitor, maintain, and repair. For a reliability engineer, ensuring that all instrumentation meets ISO 9000 or similar standards is a time-consuming responsibility. These standards mandate that precision
  • Characterizing a rapid thermal annealing process to improve sensor yield
    in the production of acceleration sensors, surface micromachining requires the integration of traditional semiconductor processing with a sound, thorough understanding of material properties and mechanics. Basically, these silicon-based precision sensors convert a raw physical input signal
  • Measurements on a budget
    Software techniques now let ordinary digital multimeters gauge capacitance and inductance with a precision once reserved for expensive test instruments. 1-MHz constant current source and dc bias A simplified block diagram of the FlexDMM shows how software is used to measure the L and C of a DUT
  • MICRO: Prod Tech News
    Helios, a rapid thermal processing (RTP) system, allows chipmakers to address demanding 300-mm RTP applications down to the 65-nm node, including ultrashallow junction (USJ) and nickel silicide formation. As the industry moves to short anneal cycles in advanced devices, precision thermal control
  • MICRO:Product News
    . The CS-5000 is a combination instrument for the analysis of precision forms and surface roughness parameters. An automatic temperature compensation function adjusts measured data to the reference temperature. LaserHologage measuring technology provides a resolution of 2.0 nm. Geometric analysis commands
  • MICRO: Critical Material-Wafers
    been using mercury-probe or capacitance-to-voltage Schottky (HgCV) techniques to measure the resistivity of wafers sampled from production runs. While these methods adequately measure a wafer's resistivity profile (resistivity as a function of depth into the silicon), any measured wafer must

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