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Supplier: Win Source Electronics
Description: : Surface Mount RoHS: Compliant Max Power Dissipation: 125 mW Max Breakdown Voltage: 50 V Collector Emitter Breakdown Voltage: 50 V Collector Emitter Voltage (VCEO): 300 mV Max Collector Current: 100 mA Transition Frequency: 100 MHz
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Supplier: Win Source Electronics
Description: Manufacturer: Central Semiconductor Corp Win Source Part Number: 044990-MPQ3467 Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 125MHz Transistor Polarity: 4 PNP (Quad) Categories: Discrete Semiconductor Products Status: Active Case / Package: TO-116 VCEO Maximum
- Package Type: SOT3, Other
- Polarity: PNP, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Diodes Incorporated Win Source Part Number: 1037929-FCX2016TC Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SOT-89-3 VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
- Package Type: SOT3, SOT89, Other
- Polarity: PNP, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 208634-MMST8598T146 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Not For New Designs Case / Package: SMT3 Maximum Current Collector: 200mA
- Package Type: SOT3, Other
- Polarity: PNP, Other
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The MMBT2222ALT1G is a high-performance NPN transistor designed by ON Semiconductor, ideal for signal processing, industrial, and automotive applications. Offering robust performance with a collector current of up to 600mA and a breakdown voltage of 40V, this transistor ensures reliability and (read more)
Browse Transistors Datasheets for Win Source Electronics
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Destructive Circuit Malfunctions and Corrective Techniques in Horizontal Deflection
A review of this Vceo breakdown demonstrates why it is normally much lower than Vcbo.
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Compact Subnanosecond Pulse Generator Using Avalanche Transistors for Cell Electroperturbation Studies
The VCEO breakdown occurs at a lower voltage of 100 V and is characterized by current runaway.
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Negative-Feedback High-Efficiency AC Voltage Regulator
More- over, since the maximum limit to Vsm is only the VCEO breakdown of "small-power high-voltage" transistors Q3 and Q4 (assuming Vsm - Vom is less than the VCEO breakdown of transistors Qi and Q2), it can be very high almost …
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MOS and bipolar VLSI technologies using electron-beam lithography
The scaled design was also fully TTL compatible with an open- collector sink current of 5 mA and VCEO breakdowns of greater than 5.5 V at 10 MA.
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A 120 MHz AM/FM PLL-IC with Dual On-Chip Programmable Charge Pump/Filter OP-AMP
The VCEO break- down voltage .
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A 21 to 26GHz SiGe bipolar PA MMIC
This paper describes a linear IC power amplifier that operates from 21 to 26GHz with approximately 125mW (+21dBm) output power using 1.8V- breakdown ( VCEO ) 100GHz-fT SiGe bipolar transistors fabricated on a medium-resistivity (10 to 15Ω-cm) substrate [1].
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Can silicon catch the millimeter wave?
A linear integrated 21-26GHz power amplifier (PA) with 125mW (+21dBm) output power using 1.8V breakdown ( VCEO ), 100GHz fT SiGe bipolar transistors is described in [4].
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An advanced single-level polysilicon submicrometer BiCMOS technology
PARAMETER (1X) Dimensions We x Le Common-Emitter Current Gain (hfe) Base Pinch Resistance fT (@VCE=PV) Saturation Current Early Voltage Collector-Emitter Breakdown ( VCEO .
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Multiproject circuit for the design of bipolar integrated circuit
However, the frequency Elevee of transistors is obtained in counterparty of low sparking voltages ( VcEo voltage of breakdown between collector and 6 metteur, of 6,5 V).
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RF/Microwave Circuit Design for Wireless Applications 2nd Edition Complete Document
The first guess would be that only the collector–emitter breakdown voltage VCEO is relevant.