Help with Thin Film Materials specifications:
Type
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CVD / Chemical Precursor | Stock product in the form of a liquid, solid, or gaseous chemical precursor. | ||
ECD Material / Chemical | Electrochemical deposition materials are deposited onto a substrate in a wet electrochemical process akin to electroplating. ECD materials consist of metal salts or aqueous solutions. | ||
Evaporation Material | Evaporation materials consist of wire, sheet, or bulk solids which can be boiled or sublimed to produce vapors which are condensed onto a substrate. | ||
Sputtering Target | Sputtering targets are used in sputtering processes where atoms or molecules of sputtering target material are knocked off and sputtered onto a substrate in the form of a thin film deposition or sputter coating. | ||
Sputtering Target - Planar | Planar sputtering targets consist of a flat, circular disc shape or a flat, rectangular plate shape. | ||
Sputtering Target - Rotary | Rotary sputtering targets consist of a hollow cylindrical or tube shape, which is rotated during deposition of thin film onto sheet and continuous web materials. | ||
Specialty / Other | Other unlisted, specialized, or proprietary material product type. | ||
Search Logic: | All products with ANY of the selected attributes will be returned as matches. Leaving all boxes unchecked will not limit the search criteria for this question; products with all attribute options will be returned as matches. | ||
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Bonded (Compound / Backing Plate)? | Sputtering metal or alloy is bonded to a backing plate alloy using a diffusion bond, solder joint, or other bonding technology. The backing plate can be made of a less expensive metal or alloy. | ||
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Monoblock / Monolithic Bond? | Monolithic sputtering targets consist of the same material throughout. Monolithic targets do not have the low-melting bonding layer found in bonded or compound targets, so they have higher heat transfer rates and can operate at higher power levels. This can result in greater coating productivity and improved deposition efficiency. | ||
Search Logic: | "Required" and "Must Not Have" criteria limit returned matches as specified. Products with optional attributes will be returned for either choice. | ||
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Bulk Solid (Powder, Granule, Lumps, etc.)? | Thin film material is available in a bulk solid form such as powder, granule, flakes, lumps, chunks, or splatter. | ||
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Material Type
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Materials Processed: | |||
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Aluminum | Systems for deposition of aluminum for microelectronic conductors or interconnects, reflectors, or other commercial applications. | ||
Aluminum Nitride | Aluminum nitride (AlN) ceramics are compounds of aluminum metal and nitrogen. Aluminum nitride is relatively inert and its good thermal conductivity combined with high electrical insulation ability makes these materials useful as substrates, insulators, and barrier layers in microelectronics applications. | ||
Aluminum Oxide / Sapphire | Alumina or aluminum oxide (Al2O3 ) is a compound of aluminum metal and oxygen usually used in the alpha alumina structural form. In its pure form alumina is a white, high hardness ceramic. Fully dense alumina can be translucent. Alumina has found wide application due to its versatility and a relatively low raw material cost. Depending on the purity and density, alumina is used for refractory tubes, industrial crucibles, analytical labware, dielectric substrates, wear components, refractory cements, and abrasives. Alumina's main drawback is its relatively poor thermal shock resistance due its higher coefficients of thermal expansion and lower thermal conductivity compared to other pure ceramic materials such as SiC. | ||
Aluminum Zinc Oxide (AZO) | Aluminum zinc oxide (AZO) is a promising transparent conductive oxide for use in photovoltaics, flat panel displays, and glass heating applications. When fully developed, AZO thin film materials may provide a lower cost, less toxic alternative to ITO thin film materials. | ||
Barrier / Refractory Metal (W, Mo, Ti, | Barrier systems such as tungsten, molybdenum or other refractory metals provide a diffusion barrier to prevent the high conductivity copper current carriers from poisoning the silicon in microelectronic conductors or interconnects or other commercial applications. | ||
Boride (ZrB2, TiB2) | Boride ceramics are compounds of a metal and boron such as zirconium boride (ZrB2) or titanium boride (TiB2). Titanium borides show an increase in ductility with an increase in temperature. | ||
Carbide | Carbides are compounds of a metal or metalloid (B, Si) and carbon. Metal carbides are also known as hard metals such as tungsten carbide (WC), titanium carbide (TiC), or tantalum carbide (TaC). Metal carbides have high hardness and high hot hardness, which makes them useful for cutting tools, forming dies & tools, and other wear applications. Metal carbides often used a cobalt, nickel, or intermetallic metal bond between grains (cemented carbides) which results in increased toughness compared to a pure carbide or ceramic. | ||
Carbon / Diamond-like Carbon (DLC) | Thin film material systems capable of producing deposits of carbon, graphite, or DLC (diamond-like carbon), which has hardness or other properties approaching those of diamond. | ||
Cadmium Telluride (CdTe) | Thin film materials used to deposit cadmium telluride (CdTe) coatings. CdTe is a compound semiconductor. | ||
Copper | Copper, brass, and bronze alloys are non-ferrous metals with excellent electrical and thermal conductivity as well as good corrosion resistance, ductility, and strength. | ||
Copper Indium Gallium Selenide (CIGS) | Thin film materials used to deposit copper indium gallium selenide (CIGS) coatings. CIGS is a compound semiconductor useful in solar or photovoltaic cell (PV) applications because of the high efficiency the material provides. | ||
Dielectric / Ceramic | Thin film material systems used for the deposition of dielectric or insulating layers of oxides, silicides or nitrides as well as other inorganic compounds, glasses, or other ceramics. | ||
Dopants / Implant Materials | Thin film raw materials such as boron (B), phosphorus (P), arsenic (As), gallium (Ga), or antimony (Sb) into a semiconductor. These dopant materials are used in ion implanters, spin coaters or other thin film coaters to deposit, implant, or drive in dopants. | ||
Fluoride / MgF2 | Flourides such as magnesium fluoride or barium fluoride are useful in optical applications. | ||
Gallium Arsenide (GaAs) | Thin film materials used to deposit gallium arsenide (GaAs) coatings. GaAs is a compound semiconductor. | ||
Gallium Nitride (GaN) | Thin film materials used to deposit gallium nitride (GaN) coatings. GaN is a compound semiconductor. | ||
Germanium | Material systems capable of depositing germanium thin film coatings. Germanium is an elemental instrinsic semiconductor. | ||
Indium Tin Oxide (ITO) | Indium Tin Oxide (ITO) is a standard transparent conductive oxide used for photovoltaics, flat panel displays, and glass heating applications. | ||
Lead Selenide (PbSe) | Thin film materials used to deposit lead telluride (PbTe) coatings. PbTe is a compound semiconductor, which may provide a lower cost option for solar applications. | ||
Metal | Material systems used to deposit metal thin films. | ||
Molybdenum | Molybdenum and molybdenum alloys are refractory metal and alloys with a very high melting point (non-alloy 2623ºC) and a low thermal expansion coefficient. They are used to fabricate evaporation crucibles, electrodes, rocket technology, furnace components, glass and zinc processing tools, and electrical contacts. | ||
Nitrides / TiN | Nitride thin film material systems such as titanium nitride or silicon nitride are used as dielectric layers and for their wear resistance. | ||
Oxides | Oxide thin film material systems such as silicon dioxide are used as dielectric layers, especially in silicon base semiconductor systems. Titanium oxide, tantalum oxide, and niobium oxides are oxides used for their electrical insulating or dielectric properties. Aluminum oxide coatings provide very wear resistant coatings. | ||
Polymer / Organic | Organic or polymer films can be deposited from precursor chemicals. Plasma enhanced chemical vapor deposition is often used in depositing polymer films. | ||
Precious / Noble Metal | Noble and precious metal alloys such as silver, gold, platinum, and palladium alloys are extremely resistant to corrosion and oxidation. Noble and precious metal alloys are used in electrical contacts, electronic connectors, chemical process components, catalysts, jewelry, and other specialized applications. | ||
Silicon | Silicon raw material systems used to form depositions of epitaxial, amorphous or polycrystalline silicon thin films. | ||
Silicide (MoSi2) | Silicide ceramics are compounds of a metal and silicon such as molybdenum disilicide (MoSi2). Molybdenum disilicide is commonly used as a resistant heating element in high temperature furnaces. | ||
Silicon Carbide (SiC) | Silicon carbide (SiC) is a compound of silicon metalloid and oxygen usually used in the alpha silicon carbide structural form. Silicon carbide can be a conductor or semiconductor depending on purity and doping. SiC is a black, high hardness ceramic that usually is harder than alumina. Depending on the impurity additions, silicon carbide is green or black in color. Fully dense silicon carbide can be transparent (Moissanite). Silicon carbide has found wide application due to its versatility and a relatively low raw material cost. Depending on the purity and density, SiC is used for refractory tubes, industrial crucibles, wafer semi-insulating substrates, wear components, refractory cements and abrasives. Alumina's main drawback is its relatively poor thermal shock resistance compared to materials with lower coefficients of thermal expansion. SiC forms a protective SiO2 skin that prevents further oxidation at very high temperatures in non-reducing atmospheres. Silicon carbide has relatively high thermal shock resistance compared to other ceramic materials due to its low coefficient of thermal expansion combined with high thermal conductivity. | ||
Silicon Oxide / Dioxide | Silica or silicon dioxide is a compound of silicon and oxygen. High purity amorphous fused silica is a high performance ceramic with very low expansion, remarkable thermal shock resistance, low thermal conductivity, excellent electrical insulation up to 1000°C, and excellent resistance to corrosion from molten metal and glass. | ||
Tungsten | Tungsten and tungsten alloys are refractory metals or alloys with a very high melting point and high density. | ||
Zinc Selenide (ZnSe) | Thin film materials used to deposit zinc telluride (ZnTe) coatings. ZnTe is a compound semiconductor. | ||
Zinc Sulfide (ZnS) | Thin film materials used to deposit zinc sulfide (ZnS) coatings. ZnS is a compound semiconductor. | ||
Specialty / Other | Other unlisted, specialized, or proprietary material. | ||
Search Logic: | All products with ANY of the selected attributes will be returned as matches. Leaving all boxes unchecked will not limit the search criteria for this question; products with all attribute options will be returned as matches. | ||
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Properties & Specifications
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Purity: | Purity is the percentage of the main metal, alloy, and ceramic in a material. The percentage of impurities in a material is 100% minus the purity in percent. A 99.9999% pure material is purer than a 99.9% pure material. | ||
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Melting Point / Range | The melting point or melting temperature range of the thin film material. Pure metals and eutectic alloys will melt at a distinct temperature. For alloys, the material may evaporate over a range of temperature if the phase diagram exhibits a liquid + solid phase region. | ||
Search Logic: | User may specify either, both, or neither of the "At Least" and "No More Than" values. Products returned as matches will meet all specified criteria. | ||
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Evaporation / Boiling Point | The boiling, sublimation, or evaporation point or range of the thin film material is the temperature at which the material begins to turn from a liquid or solid state into a vapor or gaseous state. | ||
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Electrical Resistivity | Electrical resistivity is the longitudinal electrical resistance (ohm-cm) of a uniform rod of unit length and unit cross-sectional area. Electrical resistivity is the inverse of conductivity. High resistivity is a defining characteristic of a dielectric material. | ||
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Index of Refraction | The index of refraction is a measure of the speed of light in a material. | ||
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Transmission | This is the amount of light transmitted through a material. | ||
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Material Density (Theoretical): | Density is the mass per unit area for a material. The sintered or fired density is dependent on the theoretical density of 100% dense body and the actual porosity retained after processing. | ||
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Size / Dimensions
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Width / O.D.: | Overall width or outer diameter of the sputtering target, foil, sheet, wire, granule, or other raw material form. | ||
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Length: | The overall length of the sputtering target, foil, sheet, wire, or other raw material form. Length is usually the largest dimension. | ||
Search Logic: | User may specify either, both, or neither of the "At Least" and "No More Than" values. Products returned as matches will meet all specified criteria. | ||
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Thickness: | The overall thickness of the sputtering target, foil, sheet, wire, or other raw material form. Thickness is usually the smallest dimension. | ||
Search Logic: | User may specify either, both, or neither of the "At Least" and "No More Than" values. Products returned as matches will meet all specified criteria. | ||
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Particle Size: | Diameter or particle size for a granule, powder, or chopped fiber material. | ||
Search Logic: | User may specify either, both, or neither of the "At Least" and "No More Than" values. Products returned as matches will meet all specified criteria. | ||
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Mesh Size: | The size or diameter range of grains or powder particles based on the U.S. Standard mesh size system, unless noted otherwise. From = + mesh size; To = - mesh size. | ||
Search Logic: | User may specify either, both, or neither of the limits in a "From - To" range; when both are specified, matching products will cover entire range. Products returned as matches will meet all specified criteria. | ||
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Applications
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Battery / Fuel Cell | Material is suitable for use in battery or fuel cell as a collector plate, proton exchange membrane, or catalyst. | ||
Cutting Tools | Thin film materials for the modification of surfaces to enhance the life and performance of cutting tools. A common example is the formation of titanium nitride films on cutting tools. | ||
Decorative / Shielding | Material systems designed for coating onto plastics, glass, or other materials for decorative or electromagnetic shielding functions. | ||
Electronics / Microelectronics | Material systems used in the manufacture of semiconductor materials or in the processing of semiconductor wafers into microelectronic components. | ||
Display (FPD / OLED) | Materials for producing displays such as flat panel displays (FPD), organic light emitting diode displays (OLED), plasma displays, and other display products. | ||
Magnetic Storage | Material systems for coating or processing magnetic storage products or components. | ||
Medical / Biotech | Material systems used to provide coatings, implants or prostheses, medical devices, and surgical tools to enhance compatibility or functionality in medical applications. | ||
MEMS | Material systems designed for manufacturing microelectromechanical (MEMS) devices, sensors, and components. | ||
Optical Coatings | Raw materials for deposition of thin films on lenses, fibers or mirrors, or other optical components. The films can be used to alter reflectivity, refractive index, or other properties. | ||
Photovoltaic / Solar | Material systems designed for the production of photovoltaic or solar cells using silicon or other semiconducting materials. | ||
Other | Other unlisted, specialized, or proprietary applications. | ||
Search Logic: | All products with ANY of the selected attributes will be returned as matches. Leaving all boxes unchecked will not limit the search criteria for this question; products with all attribute options will be returned as matches. | ||
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Applications & Features
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Anti-reflective | Thin film material can produce anti-reflective (AR) coatings or depositions. | ||
Conductive | Thin film material can produce electrically conductive coatings or depositions. | ||
Dielectric | Thin film material can produce electrically insulating or dielectric coatings or depositions. | ||
Low k | Low k or low loss tangent dielectric thin film coatings are important in semiconductor chip fabrication processes where dimensions are diminishing and cross talk problems are becoming a concern. | ||
Reflective / Mirror Coatings | Thin film material can produce reflective or mirror coatings. | ||
Semiconductive | Thin film material can produce semiconductive coatings or depositions. | ||
Transparent | The thin film material is designed to produce an optically transparent film. | ||
Wear Resistant | Thin film materials with suitable hardness, strength, and other wear resistant properties. | ||
Other | Other unlisted, specialized, or proprietary applications. | ||
Search Logic: | All products with ANY of the selected attributes will be returned as matches. Leaving all boxes unchecked will not limit the search criteria for this question; products with all attribute options will be returned as matches. | ||
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