The Microchip Technology Inc. 23X256 are 256 Kbit Serial SRAM devices. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts. The 23X256 is available in standard packages including 8-lead PDIP and SOIC, and advanced packaging including 8-lead TSSOP.

Additional Features

• Max. Clock 20 MHz
• Low-Power CMOS Technology:- Read Current: 3 mA at 1 MHz- Standby Current: 4 µA Max. at 3.6V
• 32,768 x 8-bit Organization
• 32-Byte Page
• HOLD pin
• Flexible Operating modes:- Byte read and write- Page mode (32 Byte Page)- Sequential mode
• Sequential Read/Write

The Microchip Technology Inc. 23X256 are 256 Kbit Serial SRAM devices. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts. The 23X256 is available in standard packages including 8-lead PDIP and SOIC, and advanced packaging including 8-lead TSSOP.

Additional Features

• Max. Clock 20 MHz
• Low-Power CMOS Technology:- Read Current: 3 mA at 1 MHz- Standby Current: 4 µA Max. at 3.6V
• 32,768 x 8-bit Organization
• 32-Byte Page
• HOLD pin
• Flexible Operating modes:- Byte read and write- Page mode (32 Byte Page)- Sequential mode
• Sequential Read/Write

The Microchip Technology Inc. 23X640 are 64 Kbit Serial SRAM devices. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts. The 23X640 is available in standard packages including 8-lead PDIP and SOIC, and advanced packaging including 8-lead TSSOP.

Additional Features

• Max. Clock 16 MHz
• Low-Power CMOS Technology:- Read Current: 3 mA at 1 MHz- Standby Current: 4 µA Max. at 3.6V
• 8192 x 8-bit Organization
• 32-Byte Page
• HOLD pin
• Flexible Operating modes:- Byte read and write- Page mode (32 Byte Page)- Sequential mode
• Sequential Read/Write

The Microchip Technology Inc. 23X640 are 64 Kbit Serial SRAM devices. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts. The 23X640 is available in standard packages including 8-lead PDIP and SOIC, and advanced packaging including 8-lead TSSOP.

Additional Features

• Max. Clock 16 MHz
• Low-Power CMOS Technology:- Read Current: 3 mA at 1 MHz- Standby Current: 4 µA Max. at 3.6V
• 8192 x 8-bit Organization
• 32-Byte Page
• HOLD pin
• Flexible Operating modes:- Byte read and write- Page mode (32 Byte Page)- Sequential mode
• Sequential Read/Write

The Microchip Technology Inc. 23A1024/23LC1024 are 1 Mbit Serial SRAM devices. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Additionally, SDI (Serial Dual Interface) and SQI (Serial Quad Interface) is supported if your application needs faster data rates. This device also supports unlimited reads and writes to the memory array. The 23A1024/23LC1024 is available in standard packages including 8-lead SOIC, PDIP and 8-lead TSSOP.

Additional Features

• SPI-Compatible Bus Interface:- 20 MHz Clock rate- SPI/SDI/SQI mode
• Low-Power CMOS Technology:
• Read Current: 3 mA at 5.5V, 20 MHz
• Standby Current: 4 µA at +85°C
• Unlimited Read and Write Cycles
• Zero Write Time
• 128K x 8-bit Organization:- 32-byte page
• Byte, Page and Sequential mode for Reads andWrites
• High Reliability
• Pb-Free and RoHS Compliant, Halogen Free
• 8 Lead SOIC, TSSOP and PDIP Packages
• Temp Range: -40°C to +85°C

The Microchip Technology Inc. 23A1024/23LC1024 are 1 Mbit Serial SRAM devices. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Additionally, SDI (Serial Dual Interface) and SQI (Serial Quad Interface) is supported if your application needs faster data rates. This device also supports unlimited reads and writes to the memory array. The 23A1024/23LC1024 is available in standard packages including 8-lead SOIC, PDIP and 8-lead TSSOP.

Additional Features

• SPI-Compatible Bus Interface:- 20 MHz Clock rate- SPI/SDI/SQI mode
• Low-Power CMOS Technology:
• Read Current: 3 mA at 5.5V, 20 MHz
• Standby Current: 4 µA at +85°C
• Unlimited Read and Write Cycles
• Zero Write Time
• 128K x 8-bit Organization:- 32-byte page
• Byte, Page and Sequential mode for Reads andWrites
• High Reliability
• Pb-Free and RoHS Compliant, Halogen Free
• 8 Lead SOIC, TSSOP and PDIP Packages
• Temp Range: -40°C to +85°C

The Microchip Technology Inc. 23A512/23LC512 are 512 Kbit Serial SRAM devices. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Additionally, SDI (Serial Dual Interface) and SQI (Serial Quad Interface) is supported if your application needs faster data rates. This device also supports unlimited reads and writes to the memory array. The 23A512/23LC512 is available in standard packages including 8-lead SOIC, PDIP and 8-lead TSSOP.

Additional Features

• SPI-Compatible Bus Interface:- 20 MHz Clock rate- SPI/SDI/SQI mode
• Low-Power CMOS Technology:- Read Current: 3 mA at 5.5V, 20 MHz- Standby Current: 4 µA at +85°C
• Unlimited Read and Write Cycles
• Zero Write Time
• 64K x 8-bit Organization:- 32-byte page
• Byte, Page and Sequential mode for Reads andWrites
• High Reliability
• Pb-Free and RoHS Compliant, Halogen Free
• 8 Lead SOIC, TSSOP and PDIP Packages
• Temp Range: -40°C to +85°C

The Microchip Technology Inc. 23A512/23LC512 are 512 Kbit Serial SRAM devices. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Additionally, SDI (Serial Dual Interface) and SQI (Serial Quad Interface) is supported if your application needs faster data rates. This device also supports unlimited reads and writes to the memory array. The 23A512/23LC512 is available in standard packages including 8-lead SOIC, PDIP and 8-lead TSSOP.

Additional Features

• SPI-Compatible Bus Interface:- 20 MHz Clock rate- SPI/SDI/SQI mode
• Low-Power CMOS Technology:- Read Current: 3 mA at 5.5V, 20 MHz- Standby Current: 4 µA at +85°C
• Unlimited Read and Write Cycles
• Zero Write Time
• 64K x 8-bit Organization:- 32-byte page
• Byte, Page and Sequential mode for Reads andWrites
• High Reliability
• Pb-Free and RoHS Compliant, Halogen Free
• 8 Lead SOIC, TSSOP and PDIP Packages
• Temp Range: -40°C to +85°C

The Microchip Technology Inc 47L16 EERAM is a 16Kbit SRAM with EEPROM Backup. The I2C EERAM Memory is a Low-Cost NVSRAM that Eliminates the Need for an External Battery to Retain Data. The device is organized as 2048 x 8 bits and utilizes the I2C serial interface. The 47L16 provides infinite read and write cycles to the SRAM while the EEPROM cells provide high endurance non-volatile storage of Data. With an external capacitor, SRAM data is automatically transferred to the EEPROM upon power-loss. Data can also be transferred manually by using either the hardware store pin or by software control. Upon power-up, the EEPROM data is automatically recalled to the SRAM. Recall can also be initiated through software control. The unlimited endurance makes the EERAM useful in applications that need to constantly monitor or record data.
The 47L16 EERAM has a 2.7-3.6V operating voltage range and is available in 8-lead SOIC, TSSOP and PDIP packages. The EERAM works from -40C to 125C and is automotive grade qualified.

Additional Features

• 16Kbit SRAM with EEPROM Back Up
• Automatic Store to EEPROM upon power-down (using optional external capacitor)
• Automatic Recall to SRAM Array upon power-up
• Hardware Store Pin for manual Store Operations
• Software commands for initiating Store and Recall Operations
• Store Time 40ms (max)
• 2.7V -3.6V Operation
• High-Speed I2C Interface (Up to 1MHz)
• Non-Volatile External Event Detect Flag
• High Reliability:
• Infinite Read and Write Cycles to SRAM Array
• More than 1 Million Store Cycles to EEPROM
• Data Retention: >200 Years
• ESD Protection: >2,000V
• Reliable Data Storage during Power Loss
• Low Power CMOS Technology:
• 1mA active current (typ)
• 40uA Standby Current (max)
• Write Protection:
• Software Write Protection from 1/64 of SRAM array to whole array
• Zero Cycle delay reads and writes
• Cascadable up to four devices
• Available Temperature Ranges:
• Industrial(I): -40^oC to +85^oC
• Automotive (E): -40^oC to +125^oC
• 8-Lead PDIP, SOIC and TSSOP Packages

The Microchip Technology Inc 47C16 EERAM is a 16Kbit SRAM with EEPROM Backup. The I2C EERAM Memory is a Low-Cost NVSRAM that Eliminates the Need for an External Battery to Retain Data. The device is organized as 2048 x 8 bits and utilizes the I2C serial interface. The 47C16 provides infinite read and write cycles to the SRAM while the EEPROM cells provide high endurance non-volatile storage of Data. With an external capacitor, SRAM data is automatically transferred to the EEPROM upon power-loss. Data can also be transferred manually by using either the hardware store pin or by software control. Upon power-up, the EEPROM data is automatically recalled to the SRAM. Recall can also be initiated through software control. The unlimited endurance makes the EERAM useful in applications that need to constantly monitor or record data.
The 47C16 EERAM has a 4.5-5.5V operating voltage range and is available in 8-lead SOIC, TSSOP and PDIP packages. The EERAM works from -40C to +125C and is automotive grade qualified.

Additional Features

• 16Kbit SRAM with EEPROM Back Up
• Automatic Store to EEPROM upon power-down (using optional external capacitor)
• Automatic Recall to SRAM Array upon power-up
• Hardware Store Pin for manual Store Operations
• Software commands for initiating Store and Recall Operations
• Store Time 40ms (max)
• 4.5V -5.5V Operation
• High-Speed I2C Interface (Up to 1MHz)
• Non-Volatile External Event Detect Flag
• High Reliability:
• Infinite Read and Write Cycles to SRAM Array
• More than 1 Million Store Cycles to EEPROM
• Data Retention: >200 Years
• ESD Protection: >2,000V
• Reliable Data Storage during Power Loss
• Low Power CMOS Technology:
• 1mA active current (typ)
• 40uA Standby Current (max)
• Write Protection:
• Software Write Protection from 1/64 of SRAM array to whole array
• Zero Cycle delay reads and writes
• Cascadable up to four devices
• Available Temperature Ranges:
• Industrial(I): -40^oC to +85^oC
• Automotive (E): -40^oC to +125^oC
• 8-Lead PDIP, SOIC and TSSOP Packages

The Microchip Technology Inc. 23LCV1024 are 1 Mbit Serial SRAM devices. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Additionally, SDI (Serial Dual Interface) is supported if your application needs faster data rates. The SRAM can be battery backed via the Vbat pin essentially making the SRAM non-volatile. The device also supports unlimited read and write cycles to the array. The 23LCV1024 is available in standard packages including 8-lead SOIC, PDIP and advanced 8-lead TSSOP.

Additional Features

• SPI-compatible Bus Interface- 20 MHz Clock rate- SPI/SDI Mode
• Low-Power CMOS Technology:- Read Current: 3 mA at 3.6V, 20 MHz- Standby Current: 4 ?A Max. at +85°C
• Unlimited read and write cycles
• Zero write time
• 128K x 8-bit organization- 32 Byte Page
• Battery-backed SRAM Support via Vbat Pin- Automatic switchover to Vbat
• Sequential Mode reads and writes
• High Reliability
• Temperature Ranges Supported: -40C to +85C
• Pb-Free and RoHS Compliant, Halogen Free
• 8 Lead SOIC, TSSOP and PDIP Packages

The Microchip Technology Inc. 23LCV1024 are 1 Mbit Serial SRAM devices. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Additionally, SDI (Serial Dual Interface) is supported if your application needs faster data rates. The SRAM can be battery backed via the Vbat pin essentially making the SRAM non-volatile. The device also supports unlimited read and write cycles to the array. The 23LCV1024 is available in standard packages including 8-lead SOIC, PDIP and advanced 8-lead TSSOP.

Additional Features

• SPI-compatible Bus Interface- 20 MHz Clock rate- SPI/SDI Mode
• Low-Power CMOS Technology:- Read Current: 3 mA at 3.6V, 20 MHz- Standby Current: 4 ?A Max. at +85°C
• Unlimited read and write cycles
• Zero write time
• 128K x 8-bit organization- 32 Byte Page
• Battery-backed SRAM Support via Vbat Pin- Automatic switchover to Vbat
• Sequential Mode reads and writes
• High Reliability
• Temperature Ranges Supported: -40C to +85C
• Pb-Free and RoHS Compliant, Halogen Free
• 8 Lead SOIC, TSSOP and PDIP Packages

The Microchip Technology Inc. 23A1024/23LC1024 are 1 Mbit Serial SRAM devices. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Additionally, SDI (Serial Dual Interface) and SQI (Serial Quad Interface) is supported if your application needs faster data rates. This device also supports unlimited reads and writes to the memory array. The 23A1024/23LC1024 is available in standard packages including 8-lead SOIC, PDIP and 8-lead TSSOP.

Additional Features

• SPI-Compatible Bus Interface:- 20 MHz Clock rate- SPI/SDI/SQI mode
• Low-Power CMOS Technology:- Read Current: 3 mA at 5.5V, 20 MHz- Standby Current: 4 µA at +85°C
• Unlimited Read and Write Cycles
• Zero Write Time
• 128K x 8-bit Organization:- 32-byte page
• Byte, Page and Sequential mode for Reads andWrites
• High Reliability
• Pb-Free and RoHS Compliant, Halogen Free
• 8 Lead SOIC, TSSOP and PDIP Packages
• Temp Range: -40°C to +85°C

The Microchip Technology Inc. 23A1024/23LC1024 are 1 Mbit Serial SRAM devices. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Additionally, SDI (Serial Dual Interface) and SQI (Serial Quad Interface) is supported if your application needs faster data rates. This device also supports unlimited reads and writes to the memory array. The 23A1024/23LC1024 is available in standard packages including 8-lead SOIC, PDIP and 8-lead TSSOP.

Additional Features

• SPI-Compatible Bus Interface:- 20 MHz Clock rate- SPI/SDI/SQI mode
• Low-Power CMOS Technology:- Read Current: 3 mA at 5.5V, 20 MHz- Standby Current: 4 µA at +85°C
• Unlimited Read and Write Cycles
• Zero Write Time
• 128K x 8-bit Organization:- 32-byte page
• Byte, Page and Sequential mode for Reads andWrites
• High Reliability
• Pb-Free and RoHS Compliant, Halogen Free
• 8 Lead SOIC, TSSOP and PDIP Packages
• Temp Range: -40°C to +85°C

The Microchip Technology Inc. 23A512/23LC512 are 512 Kbit Serial SRAM devices. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Additionally, SDI (Serial Dual Interface) and SQI (Serial Quad Interface) is supported if your application needs faster data rates. This device also supports unlimited reads and writes to the memory array. The 23A512/23LC512 is available in standard packages including 8-lead SOIC, PDIP and 8-lead TSSOP.

Additional Features

• SPI-Compatible Bus Interface:- 20 MHz Clock rate- SPI/SDI/SQI mode
• Low-Power CMOS Technology:- Read Current: 3 mA at 5.5V, 20 MHz- Standby Current: 4 µA at +85°C
• Unlimited Read and Write Cycles
• Zero Write Time
• 64K x 8-bit Organization:- 32-byte page
• Byte, Page and Sequential mode for Reads andWrites
• High Reliability
• Pb-Free and RoHS Compliant, Halogen Free
• 8 Lead SOIC, TSSOP and PDIP Packages
• Temp Range: -40°C to +85°C

The Microchip Technology Inc. 23A512/23LC512 are 512 Kbit Serial SRAM devices. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Additionally, SDI (Serial Dual Interface) and SQI (Serial Quad Interface) is supported if your application needs faster data rates. This device also supports unlimited reads and writes to the memory array. The 23A512/23LC512 is available in standard packages including 8-lead SOIC, PDIP and 8-lead TSSOP.

Additional Features

• SPI-Compatible Bus Interface:- 20 MHz Clock rate- SPI/SDI/SQI mode
• Low-Power CMOS Technology:- Read Current: 3 mA at 5.5V, 20 MHz- Standby Current: 4 µA at +85°C
• Unlimited Read and Write Cycles
• Zero Write Time
• 64K x 8-bit Organization:- 32-byte page
• Byte, Page and Sequential mode for Reads andWrites
• High Reliability
• Pb-Free and RoHS Compliant, Halogen Free
• 8 Lead SOIC, TSSOP and PDIP Packages
• Temp Range: -40°C to +85°C

The Microchip Technology Inc. 23X256 are 256 Kbit Serial SRAM devices. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts. The 23X256 is available in standard packages including 8-lead PDIP and SOIC, and advanced packaging including 8-lead TSSOP.

Additional Features

• Max. Clock 20 MHz
• Low-Power CMOS Technology: - Read Current: 3 mA at 1 MHz - Standby Current: 4 µA Max. at 3.6V
• 32,768 x 8-bit Organization
• 32-Byte Page
• HOLD pin
• Flexible Operating modes: - Byte read and write - Page mode (32 Byte Page) - Sequential mode
• Sequential Read/Write

The Microchip Technology Inc. 23X256 are 256 Kbit Serial SRAM devices. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts. The 23X256 is available in standard packages including 8-lead PDIP and SOIC, and advanced packaging including 8-lead TSSOP.

Additional Features

• Max. Clock 20 MHz
• Low-Power CMOS Technology: - Read Current: 3 mA at 1 MHz - Standby Current: 4 µA Max. at 3.6V
• 32,768 x 8-bit Organization
• 32-Byte Page
• HOLD pin
• Flexible Operating modes: - Byte read and write - Page mode (32 Byte Page) - Sequential mode
• Sequential Read/Write

The Microchip Technology Inc. 23X640 are 64 Kbit Serial SRAM devices. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts. The 23X640 is available in standard packages including 8-lead PDIP and SOIC, and advanced packaging including 8-lead TSSOP.

Additional Features

• Max. Clock 16 MHz
• Low-Power CMOS Technology: - Read Current: 3 mA at 1 MHz - Standby Current: 4 µA Max. at 3.6V
• 8192 x 8-bit Organization
• 32-Byte Page
• HOLD pin
• Flexible Operating modes: - Byte read and write - Page mode (32 Byte Page) - Sequential mode
• Sequential Read/Write

The Microchip Technology Inc. 23X640 are 64 Kbit Serial SRAM devices. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts. The 23X640 is available in standard packages including 8-lead PDIP and SOIC, and advanced packaging including 8-lead TSSOP.

Additional Features

• Max. Clock 16 MHz
• Low-Power CMOS Technology: - Read Current: 3 mA at 1 MHz - Standby Current: 4 µA Max. at 3.6V
• 8192 x 8-bit Organization
• 32-Byte Page
• HOLD pin
• Flexible Operating modes: - Byte read and write - Page mode (32 Byte Page) - Sequential mode
• Sequential Read/Write

EERAM is an SRAM that doesn't lose its content on a power disruption. Inside each memory cell, transparent to the user, are nonvolatile transistors that capture the SRAM content and hold it through power loss events. On power restore, the SRAM is reloaded with its last content and SRAM operation can continue.

Additional Features

• 32,768 x 8 bit Serial SRAM with internal nonvolatile data backup
• High-Speed SPI Interface: Up to 66MHz with Schmitt trigger inputs for noise suppression
• Low-Power CMOS Technology: Active current: 5 mA (maximum); Standby current: 500 μA (maximum); Hibernate current: 3 μA (maximum)
• Cell-Based Nonvolatile Backup mirrors SRAM array cell-for-cell and transfers all data to/from SRAM cells in parallel (all cells at same time)
• Invisible-to-User Data Transfers: VCC level monitored inside device, SRAM automatically saved on power disrupt, and SRAM automatically restored on VCC return
• 100,000 Backups Minimum (at 20°C)
• 100 years retention (at 20°C)
• Operating Voltage Range: 2.7V-3.6V
• Temperature Range Industrial (I) -40 to 85ºC, Extended (E) -40 to 125ºC
• 8-SOIC (150mil wide) package

The Microchip Technology Inc 47L04 EERAM is a 4Kbit SRAM with EEPROM Backup. The I2C EERAM Memory is a Low-Cost NVSRAM that Eliminates the Need for an External Battery to Retain Data. The device is organized as 512 x 8 bits and utilizes the I2C serial interface. The 47L04 provides infinite read and write cycles to the SRAM while the EEPROM cells provide high endurance non-volatile storage of Data. With an external capacitor, SRAM data is automatically transferred to the EEPROM upon power-loss. Data can also be transferred manually by using either the hardware store pin or by software control. Upon power-up, the EEPROM data is automatically recalled to the SRAM. Recall can also be initiated through software control. The unlimited endurance makes the EERAM useful in applications that need to constantly monitor or record data.
The 47L04 EERAM has a 2.7-3.6V operating voltage range and is available in 8-lead SOIC, TSSOP and PDIP packages. The EERAM works from -40C to 125C and is automotive grade qualified.

Additional Features

• 4Kbit SRAM with EEPROM Back Up
• Automatic Store to EEPROM upon power-down (using optional external capacitor)
• Automatic Recall to SRAM Array upon power-up
• Hardware Store Pin for manual Store Operations
• Software commands for initiating Store and Recall Operations
• Store Time 40ms (max)
• 2.7V -3.6V Operation
• High-Speed I2C Interface (Up to 1MHz)
• Non-Volatile External Event Detect Flag
• High Reliability:
• Infinite Read and Write Cycles to SRAM Array
• More than 1 Million Store Cycles to EEPROM
• Data Retention: >200 Years
• ESD Protection: >2,000V
• Reliable Data Storage during Power Loss
• Low Power CMOS Technology:
• 1mA active current (typ)
• 40uA Standby Current (max)
• Write Protection:
• Software Write Protection from 1/64 of SRAM array to whole array
• Zero Cycle delay reads and writes
• Cascadable up to four devices
• Available Temperature Ranges:
• Industrial(I): -40^oC to +85^oC
• Automotive (E): -40^oC to +125^oC
• 8-Lead PDIP, SOIC and TSSOP Packages

The Microchip Technology Inc 47C04 EERAM is a 4Kbit SRAM with EEPROM Backup. The I2C EERAM Memory is a Low-Cost NVSRAM that Eliminates the Need for an External Battery to Retain Data. The device is organized as 512 x 8 bits and utilizes the I2C serial interface. The 47C04 provides infinite read and write cycles to the SRAM while the EEPROM cells provide high endurance non-volatile storage of Data. With an external capacitor, SRAM data is automatically transferred to the EEPROM upon power-loss. Data can also be transferred manually by using either the hardware store pin or by software control. Upon power-up, the EEPROM data is automatically recalled to the SRAM. Recall can also be initiated through software control. The unlimited endurance makes the EERAM useful in applications that need to constantly monitor or record data.
The 47C04 EERAM has a 4.5-5.5V operating voltage range and is available in 8-lead SOIC, TSSOP and PDIP packages. The EERAM works from -40C to 125C and is automotive grade qualified.

Additional Features

• 4Kbit SRAM with EEPROM Back Up
• Automatic Store to EEPROM upon power-down (using optional external capacitor)
• Automatic Recall to SRAM Array upon power-up
• Hardware Store Pin for manual Store Operations
• Software commands for initiating Store and Recall Operations
• Store Time 40ms (max)
• 4.5V -5.5V Operation
• High-Speed I2C Interface (Up to 1MHz)
• Non-Volatile External Event Detect Flag
• High Reliability:
• Infinite Read and Write Cycles to SRAM Array
• More than 1 Million Store Cycles to EEPROM
• Data Retention: >200 Years
• ESD Protection: >2,000V
• Reliable Data Storage during Power Loss
• Low Power CMOS Technology:
• 1mA active current (typ)
• 40uA Standby Current (max)
• Write Protection:
• Software Write Protection from 1/64 of SRAM array to whole array
• Zero Cycle delay reads and writes
• Cascadable up to four devices
• Available Temperature Ranges:
• Industrial(I): -40^oC to +85^oC
• Automotive (E): -40^oC to +125^oC
• 8-Lead PDIP, SOIC and TSSOP Packages

The Microchip Technology Inc. 23LCV512 are 512 Kbit Serial SRAM devices. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Additionally, SDI (Serial Dual Interface) is supported if your application needs faster data rates. The SRAM can be battery backed via the Vbat pin essentially making the SRAM non-volatile. The device also supports unlimited read and write cycles to the array. The 23LCV512 is available in standard packages including 8-lead SOIC, PDIP and advanced 8-lead TSSOP.

Additional Features

• SPI-compatible Bus Interface- 20 MHz Clock rate- SPI/SDI Mode
• Low-Power CMOS Technology:- Read Current: 3 mA at 3.6V, 20 MHz- Standby Current: 4 uA Max. at +85°C
• Unlimited read and write cycles
• Zero write time
• 64K x 8-bit organization- 32 Byte Page
• Battery-backed SRAM Support via Vbat Pin- Automatic switchover to Vbat
• Sequential Mode reads and writes
• High Reliability
• Temperature Ranges Supported: -40C to +85C
• Pb-Free and RoHS Compliant, Halogen Free
• 8 Lead SOIC, TSSOP and PDIP Packages

The Microchip Technology Inc. 23LCV512 are 512 Kbit Serial SRAM devices. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Additionally, SDI (Serial Dual Interface) is supported if your application needs faster data rates. The SRAM can be battery backed via the Vbat pin essentially making the SRAM non-volatile. The device also supports unlimited read and write cycles to the array. The 23LCV512 is available in standard packages including 8-lead SOIC, PDIP and advanced 8-lead TSSOP.

Additional Features

• SPI-compatible Bus Interface- 20 MHz Clock rate- SPI/SDI Mode
• Low-Power CMOS Technology:- Read Current: 3 mA at 3.6V, 20 MHz- Standby Current: 4 uA Max. at +85°C
• Unlimited read and write cycles
• Zero write time
• 64K x 8-bit organization- 32 Byte Page
• Battery-backed SRAM Support via Vbat Pin- Automatic switchover to Vbat
• Sequential Mode reads and writes
• High Reliability
• Temperature Ranges Supported: -40C to +85C
• Pb-Free and RoHS Compliant, Halogen Free
• 8 Lead SOIC, TSSOP and PDIP Packages

The MCP7940N series of low-power Real-Time Clocks (RTC) uses digital timing compensation for an accurate clock/calendar, a programmable output control for versatility, and a power sense circuit that automatically switches to the backup supply. Using a low-cost 32.768 kHz crystal, it tracks time using several internal registers. For communication, the MCP7940N uses the I2C™ bus. The clock/calendar automatically adjusts for months with fewer than 31 days, including corrections for leap years. The clock operates in either the 24-hour or 12-hour format with an AM/PM indicator and settable alarm(s) to the second, minute, hour, day of the week, date or month. Using the programmable CLKOUT, frequencies of 32.768, 8.192 and 4.096 kHz and 1 Hz can be generated from the external crystal. The device is fully accessible through the serial interface while VCC is between 1.8V and 5.5V, but can operate down to 1.3V for timekeeping and SRAM retention only.

Additional Features

Timekeeping
• Battery-Backed Real-Time Clock/Calendar (RTCC)
• Hours, Minutes, Seconds, Day of Week, Day, Month, Year
• Leap year compensated to 2399
• 12/24 hour modes
• On-Chip Digital Trimming/Calibration
• 1 PPM Resolution
• ±129 PPM Range
• Dual Programmable Alarms
• Versatile Output Pin
• Clock output with selectable frequency
• Alarm output
• General Purpose output
• Power-Fail Time-Stamp
• Time logged on switchover to and from Battery Backup
• 64 Bytes Battery-Backed SRAM
• 2-Wire Serial Interface, I²C™Compatible
• I²C Clock Frequency up to 400 kHz
Low-Power
• Wide Voltage Range
• Operating Voltage 1.8V to 5.5V
• Backup Voltage 1.3V to 5.5V
• Low Typical Timekeeping Current
• Automatic Switchover to Battery Backup

The MCP7940N series of low-power Real-Time Clocks (RTC) uses digital timing compensation for an accurate clock/calendar, a programmable output control for versatility, and a power sense circuit that automatically switches to the backup supply. Using a low-cost 32.768 kHz crystal, it tracks time using several internal registers. For communication, the MCP7940N uses the I2C™ bus. The clock/calendar automatically adjusts for months with fewer than 31 days, including corrections for leap years. The clock operates in either the 24-hour or 12-hour format with an AM/PM indicator and settable alarm(s) to the second, minute, hour, day of the week, date or month. Using the programmable CLKOUT, frequencies of 32.768, 8.192 and 4.096 kHz and 1 Hz can be generated from the external crystal. The device is fully accessible through the serial interface while VCC is between 1.8V and 5.5V, but can operate down to 1.3V for timekeeping and SRAM retention only.

Additional Features

Timekeeping
• Battery-Backed Real-Time Clock/Calendar (RTCC)
• Hours, Minutes, Seconds, Day of Week, Day, Month, Year
• Leap year compensated to 2399
• 12/24 hour modes
• On-Chip Digital Trimming/Calibration
• 1 PPM Resolution
• ±129 PPM Range
• Dual Programmable Alarms
• Versatile Output Pin
• Clock output with selectable frequency
• Alarm output
• General Purpose output
• Power-Fail Time-Stamp
• Time logged on switchover to and from Battery Backup
• 64 Bytes Battery-Backed SRAM
• 2-Wire Serial Interface, I²C™Compatible
• I²C Clock Frequency up to 400 kHz
Low-Power
• Wide Voltage Range
• Operating Voltage 1.8V to 5.5V
• Backup Voltage 1.3V to 5.5V
• Low Typical Timekeeping Current
• Automatic Switchover to Battery Backup

The MCP79400 general purpose I2C^TM Compatible real-time clock/calendar (RTCC) is highly integrated with memory and advanced features normally found in higher priced devices. These features include a battery switchover circuit for backup power, a timestamp to log power failures and digital trimming for accuracy. Using a low-cost 32,768 kHz crystal or other clock source, time is tracked in either a 12-hour or 24-hour format with an AM/PM indicator and timing to the second, minute, hour, day of the week, day, month and year. As an interrupt or wakeup signal, a multifunction open drain output can be programmed as an Alarm Out or as a Clock Out that supports 4 selectable frequencies. In addition to the SRAM memory, there a unique ID in a locked section of EEPROM that can be unlocked and programmed by the end user.

Additional Features

General purpose RTCC with features that target low power and smart energy applications.
• Low Power Operation
• VCC Min = 1.8V
• Icc < 5 µA Typical Dynamic Current
• Low Backup Power
• VBAT Min = 1.3V
• Ibat < 700nA Typical Timekeeping & SRAM Retention Current
• Automatic Battery Switchover with Timestamp
• VCC to VBAT (power lost)
• VBAT to VCC (power restored)
• Dual alarms with single Interrupt Output that operates on VCC or VBAT
• Clock Out frequencies of 32.768, 8.192 & 4.096 KHz and 1 Hz
• Digital Trimming Range from -127 to + 127 ppm in 1 ppm steps
• 1 ppm is approximately 86 milliseconds/day
• Factory standard or custom ID programming available

The MCP79410 general purpose I²C™Compatible real-time clock/calendar (RTCC) is highly integrated with nonvolatile memory and advanced features normally found in higher priced devices. These features include a battery switchover circuit for backup power, a timestamp to log power failures and digital trimming for accuracy. Using a low-cost 32.768 kHz crystal or other clock source, time is tracked in either a 12-hour or 24-hour format with an AM/PM indicator and timing to the second, minute, hour, day of the week, day, month and year. As an interrupt or wakeup signal, a multifunction open drain output can be programmed as an Alarm Out or as a Clock Out that supports 4 selectable frequencies. In addition, non-volatile memory is included along with a Unique ID in a locked section of EEPROM that can be unlocked and programmed by the End User.

Additional Features

Timekeeping
• Battery-Backed Real-Time Clock/Calendar (RTCC)
• Hours, Minutes, Seconds, Day of Week, Day, Month, Year
• Leap year compensated to 2399
• 12/24 hour modes
• On-Chip Digital Trimming/Calibration
• 1 PPM Resolution
• ±129 PPM Range
• Dual Programmable Alarms
• Versatile Output Pin
• Clock output with selectable frequency
• Alarm output
• General Purpose output
• Power-Fail Time-Stamp
• Time logged on switchover to and from Battery Backup
• 2-Wire Serial Interface, I²C™Compatible
• I²C Clock Frequency up to 400 kHz
User Memory
• 64 Bytes Battery-Backed SRAM
• 1Kb EEPROM Memory
• 64-bit Protected EEPROM Area
• Robust write unlock sequence
Low-Power
• Wide Voltage Range
• Operating Voltage 1.8V to 5.5V
• Backup Voltage 1.3V to 5.5V
• Low Typical Timekeeping Current
• Automatic Switchover to Battery Backup

The MCP79410 general purpose I²C™Compatible real-time clock/calendar (RTCC) is highly integrated with nonvolatile memory and advanced features normally found in higher priced devices. These features include a battery switchover circuit for backup power, a timestamp to log power failures and digital trimming for accuracy. Using a low-cost 32.768 kHz crystal or other clock source, time is tracked in either a 12-hour or 24-hour format with an AM/PM indicator and timing to the second, minute, hour, day of the week, day, month and year. As an interrupt or wakeup signal, a multifunction open drain output can be programmed as an Alarm Out or as a Clock Out that supports 4 selectable frequencies. In addition, non-volatile memory is included along with a Unique ID in a locked section of EEPROM that can be unlocked and programmed by the End User.

Additional Features

Timekeeping
• Battery-Backed Real-Time Clock/Calendar (RTCC)
• Hours, Minutes, Seconds, Day of Week, Day, Month, Year
• Leap year compensated to 2399
• 12/24 hour modes
• On-Chip Digital Trimming/Calibration
• 1 PPM Resolution
• ±129 PPM Range
• Dual Programmable Alarms
• Versatile Output Pin
• Clock output with selectable frequency
• Alarm output
• General Purpose output
• Power-Fail Time-Stamp
• Time logged on switchover to and from Battery Backup
• 2-Wire Serial Interface, I²C™Compatible
• I²C Clock Frequency up to 400 kHz
User Memory
• 64 Bytes Battery-Backed SRAM
• 1Kb EEPROM Memory
• 64-bit Protected EEPROM Area
• Robust write unlock sequence
Low-Power
• Wide Voltage Range
• Operating Voltage 1.8V to 5.5V
• Backup Voltage 1.3V to 5.5V
• Low Typical Timekeeping Current
• Automatic Switchover to Battery Backup

The MCP79400 general purpose I2C^TM Compatible real-time clock/calendar (RTCC) is highly integrated with memory and advanced features normally found in higher priced devices. These features include a battery switchover circuit for backup power, a timestamp to log power failures and digital trimming for accuracy. Using a low-cost 32,768 kHz crystal or other clock source, time is tracked in either a 12-hour or 24-hour format with an AM/PM indicator and timing to the second, minute, hour, day of the week, day, month and year. As an interrupt or wakeup signal, a multifunction open drain output can be programmed as an Alarm Out or as a Clock Out that supports 4 selectable frequencies. In addition to the SRAM memory, there a unique ID in a locked section of EEPROM that can be unlocked and programmed by the end user.

Additional Features

General purpose RTCC with features that target low power and smart energy applications.
• Low Power Operation
• VCC Min = 1.8V
• Icc < 5 µA Typical Dynamic Current
• Low Backup Power
• VBAT Min = 1.3V
• Ibat < 700nA Typical Timekeeping & SRAM Retention Current
• Automatic Battery Switchover with Timestamp
• VCC to VBAT (power lost)
• VBAT to VCC (power restored)
• Dual alarms with single Interrupt Output that operates on VCC or VBAT
• Clock Out frequencies of 32.768, 8.192 & 4.096 KHz and 1 Hz
• Digital Trimming Range from -127 to + 127 ppm in 1 ppm steps
• 1 ppm is approximately 86 milliseconds/day
• Factory standard or custom ID programming available

The MCP7940M I²C^TM compatible real-time clock/calendar (RTCC) includes SRAM and a digital trimming circuit for accuracy which is normally found in higher priced devices. Using a low-cost 32,768 kHz crystal or other clock source, time is tracked in either a 12-hour or 24-hour format with an AM/PM indicator and timing to the second, minute, hour, day of the week, day, month and year. As an interrupt or wakeup signal, a multifunction open drain output can be programmed as an Alarm Out or as a Clock Out that supports 4 selectable frequencies.

Additional Features

Timekeeping
• Real-Time Clock/Calendar (RTCC)
• Hours, Minutes, Seconds, Day of Week, Day, Month, Year
• Leap year compensated to 2399
• 12/24 hour modes
• On-Chip Digital Trimming/Calibration
• 1 PPM Resolution
• ±129 PPM Range
• Dual Programmable Alarms
• Versatile Output Pin
• Clock output with selectable frequency
• Alarm output
• General Purpose output
• 64 Bytes SRAM
• 2-Wire Serial Interface, I²C™Compatible
• I²C Clock Frequency up to 400 kHz
Low-Power
• Wide Voltage Range
• Operating Voltage 1.8V to 5.5V
• Low Typical Timekeeping Current

The MCP7940M I²C^TM compatible real-time clock/calendar (RTCC) includes SRAM and a digital trimming circuit for accuracy which is normally found in higher priced devices. Using a low-cost 32,768 kHz crystal or other clock source, time is tracked in either a 12-hour or 24-hour format with an AM/PM indicator and timing to the second, minute, hour, day of the week, day, month and year. As an interrupt or wakeup signal, a multifunction open drain output can be programmed as an Alarm Out or as a Clock Out that supports 4 selectable frequencies.

Additional Features

Timekeeping
• Real-Time Clock/Calendar (RTCC)
• Hours, Minutes, Seconds, Day of Week, Day, Month, Year
• Leap year compensated to 2399
• 12/24 hour modes
• On-Chip Digital Trimming/Calibration
• 1 PPM Resolution
• ±129 PPM Range
• Dual Programmable Alarms
• Versatile Output Pin
• Clock output with selectable frequency
• Alarm output
• General Purpose output
• 64 Bytes SRAM
• 2-Wire Serial Interface, I²C™Compatible
• I²C Clock Frequency up to 400 kHz
Low-Power
• Wide Voltage Range
• Operating Voltage 1.8V to 5.5V
• Low Typical Timekeeping Current