Features

• High-speed switching with low capacitances
• High blocking voltage with low R_DS(on)
• Resistant to latch-up
• Easy to parallel and simple to drive
• Avalanche ruggedness

Features

• High-speed switching with low capacitances
• High blocking voltage with low R_DS(on)
• Resistant to latch-up
• Easy to parallel and simple to drive
• Halogen-free, RoHS-compliant

Features

• High-speed switching with low capacitances
• High blocking voltage with low R_DS(on)
• Avalanche ruggedness
• Resistant to latch-up
• Easy to parallel and simple to drive

C2M1000170D replaces silicon MOSFETs in auxiliary power supplies where reliable, efficient power conversion from high-voltage buses is required to operate system logic, displays, cooling fans, etc.

Features

• High-speed switching with low capacitances
• High blocking voltage with low R_DS(on)
• Easy to parallel and simple to drive
• Resistant to latch-up
• Halogen-free, RoHS-compliant

Features

• High-speed switching with low capacitances
• High blocking voltage with low R_DS(on)
• Easy to parallel and simple to drive
• Resistant to latch-up
• Avalanche ruggedness

This 24 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz.

RF MOSFET GAN 48V 6DFN

The MMRF1050H RF power transistor is designed for short pulse applications operating at frequencies from 850 to 950 MHz.

Airfast RF Power LDMOS Transistor, 700 W Pulse over 960-1215 MHz, 52 V / REEL RoHS Compliant: Yes

Airfast RF Power LDMOS Transistor, 720-960 MHz, 100 W AVG., 48 V / REEL RoHS Compliant: Yes

N-Channel Enhancement-Mode Lateral MOSFET. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. The transistor is also suitable for wideband power amplifier applications from 600 to 1000 MHz and saturated power levels up to 500 watts.

Manufacturer: NXP
Win Source Part Number: 768337-AFV09P350-04NR3
Packaging: Reel package
Package: OM780-4
Frequency: 920MHz
Current - Test: 860mA
Gain: 19.5dB
Transistor Type: LDMOS (Dual)
Voltage - Test: 48V
Power - Output: 100W
Family Name: AFV09P350-04NR3
Categories: Discrete Semiconductor Products
Manufacturer Package: OM780-4
Voltage Rating DC: 105V
Introduction Date: December 20, 2013
ECCN: EAR99
Estimated EOL Date: 2032
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited

This 107 W asymmetrical Doherty RF power LDMOS transistor is designedfor cellular base station applications covering the frequency range of 720 to960 MHz.

Manufacturer: NXP
Win Source Part Number: 858894-A2V09H300-04NR3
Features: RF Mosfet LDMOS 48 V 400 mA 720MHz ~ 960MHz 19.7dB 53dBm OM-780G-4L
Package: Reel - TR
Package: OM-780G-4L
Family Name: A2V09
Categories: Discrete Semiconductor Products
Case / Package: OM-780G-4L
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
Quantity per package: 250
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 25 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075

Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.

RF TRANS NPN 50V 211-11

NPN wideband silicon RF transistor

Manufacturer: NXP
Win Source Part Number: 100269-BFU725F/N1,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 10dB to 24dB
Frequency - Transition: 55GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 0.42dB to 1.1dB @ 1.5GHz to 12GHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 4-SO
Maximum Current Collector: 40mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 2.8V
Typical Gain (hFE) (Min): 160 @ 10mA, 2V
Maximum Power Dissipation: 136mW
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient

Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.

RF Transistor NPN 2.8V 30mA 55GHz 197mW Surface Mount 4-DFP

RF TRANS NPN 3V 53GHZ 3DFN1006

RF Transistor NPN 2.8V 70mA 45GHz 220mW Surface Mount 4-DFP

RF Transistor NPN 2.8V 100mA 25GHz 234mW Surface Mount 4-DFP

TRANSISTOR, AEC-Q101, RF, NPN, 12V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:10.5GHz; Power Dissipation Pd:450mW; DC Collector Current:5mA; DC Current Gain hFE:95hFE; RF Transistor RoHS Compliant: Yes

TRANS RF NPN 33V 1.1A 244-04

Win Source Part Number: 1030687-MRF10031
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Package: Tray
Standard Package: 20
Power - Max: 30W
Voltage - Collector Emitter Breakdown (Max): 55V
Current - Collector (Ic) (Max): 3A
Gain: 9.5dB
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Mounting Type: Chassis Mount
Package / Case: 332A-03
Supplier Device Package: 332A-03, Style 2
Temperature Range - Operating: 200°C (TJ)
Alternative Parts (Cross-Reference): 1090MP; 1014-6A; 2A8;
ECCN: EAR99
Fake Threat In the Open Market: 48 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: MACOM Technology Solutions
Other Names: 1465-1137

RF Transistor NPN 12V 50mA 11GHz 450mW Surface Mount SOT-23 (TO-236AB)

RF TRANS NPN 12V 8GHZ SOT89-3

Win Source Part Number: 1080391-MRF10120
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Package: Tray
Standard Package: 20
Power - Max: 120W
Voltage - Collector Emitter Breakdown (Max): 55V
Current - Collector (Ic) (Max): 15A
Gain: 8.5dB
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
Mounting Type: Chassis Mount
Package / Case: 355C-02
Supplier Device Package: 355C-02, Style 1
Temperature Range - Operating: 200°C (TJ)
Alternative Parts (Cross-Reference): DME375A; 1090MP; 1014-6A; 2A8;
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: MACOM Technology Solutions
Other Names: 1465-1139

12V 450mW 95@15mA,8V 15mA NPN SOT-143-4 Bipolar Transistors - BJT ROHS

RF Transistor NPN 2.8V 70mA 220mW Surface Mount 4-DFP

RF Transistor NPN 12V 30mA 10GHz 450mW Surface Mount SC-70

RF TRANS NPN 5.5V 21GHZ 4DFP

Manufacturer: MACOM Technology Solutions
Win Source Part Number: 1323966-MRF321
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Packaging: Tray
Standard Package: 10
Mounting: Chassis Mount
Power - Max: 10W
Voltage - Collector Emitter Breakdown (Max): 33V
Current - Collector (Ic) (Max): 1.1A
Gain: 13dB
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Supplier Device Package: 244-04, STYLE 1
Case / Package: 244-04
ECCN: EAR99
Fake Threat In the Open Market: 68
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: 1465-1179
RoHS Status: ROHS3 Compliant

RF Transistor NPN 20V 200mA 0.7W Chassis Mount 332A-03, Style 2

RF Transistor NPN 55V 1.25mA 25W Chassis Mount 336E-02, Style 1

RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, L Band, Silicon, NPN

Manufacturer: MACOM Technology Solutions
Win Source Part Number: 1325009-MRF10350
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Packaging: Tray
Standard Package: 20
Mounting: Chassis Mount
Power - Max: 350W
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 31A
Gain: 9dB
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
Supplier Device Package: 355E-01, Style 1
Temperature Range - Operating: 200°C (TJ)
Case / Package: 355E-01
ECCN: EAR99
Fake Threat In the Open Market: 80
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0075
Other Part Number: 1465-1141
RoHS Status: ROHS3 Compliant

TRANS RF NPN 50V 16A 211-11

Manufacturer: MACOM Technology Solutions
Win Source Part Number: 1325013-MRF393
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Packaging: Tray
Standard Package: 20
Mounting: Chassis Mount
Power - Max: 100W
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 16A
Gain: 8.5dB
Transistor Type: 2 NPN (Dual) Common Emitter
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Supplier Device Package: 744A-01, Style 1
Temperature Range - Operating: 200°C (TJ)
Case / Package: 744A-01
ECCN: EAR99
Fake Threat In the Open Market: 84
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: 1465-1183
RoHS Status: ROHS3 Compliant

Manufacturer: MACOM Technology Solutions
Win Source Part Number: 1325015-PH1090-175L
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Packaging: Tray
Standard Package: 20
Mounting: Chassis Mount
Power - Max: 188W
Voltage - Collector Emitter Breakdown (Max): 80V
Current - Collector (Ic) (Max): 10.5A
Gain: 8.58dB
Transistor Type: NPN
Temperature Range - Operating: 200°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 78
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0075
Other Part Number: 1465-1193
Base Product Number: PH1090
RoHS Status: ROHS3 Compliant

Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.

RF Bipolar Transistors

RF Transistor NPN 20V 20A 100W Chassis Mount 211-11, Style 2

Manufacturer: MACOM Technology Solutions
Win Source Part Number: 1325612-PH1090-550S
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Packaging: Tray
Standard Package: 20
Mounting: Chassis Mount
Power - Max: 550W
Voltage - Collector Emitter Breakdown (Max): 80V
Current - Collector (Ic) (Max): 28A
Gain: 8.06dB
Transistor Type: NPN
Temperature Range - Operating: 200°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 75
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0040
Other Part Number: 1465-1195
Base Product Number: PH1090
RoHS Status: ROHS3 Compliant

RF Transistor NPN 12V 50mA 11GHz 450mW Surface Mount SOT-143R

RF Bipolar Transistors NPN wideband silicon RF transistor

RF Transistor NPN 80V 52.5A 500W Chassis Mount

Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.

RF TRANS NPN 65V 1.215GHZ