Features

• High-speed switching with low capacitances
• High blocking voltage with low R_DS(on)
• Resistant to latch-up
• Easy to parallel and simple to drive
• Avalanche ruggedness

Features

• High-speed switching with low capacitances
• High blocking voltage with low R_DS(on)
• Resistant to latch-up
• Easy to parallel and simple to drive
• Halogen-free, RoHS-compliant

Features

• High-speed switching with low capacitances
• High blocking voltage with low R_DS(on)
• Avalanche ruggedness
• Resistant to latch-up
• Easy to parallel and simple to drive

C2M1000170D replaces silicon MOSFETs in auxiliary power supplies where reliable, efficient power conversion from high-voltage buses is required to operate system logic, displays, cooling fans, etc.

Features

• High-speed switching with low capacitances
• High blocking voltage with low R_DS(on)
• Easy to parallel and simple to drive
• Resistant to latch-up
• Halogen-free, RoHS-compliant

Features

• High-speed switching with low capacitances
• High blocking voltage with low R_DS(on)
• Easy to parallel and simple to drive
• Resistant to latch-up
• Avalanche ruggedness

This 24 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz.

RF MOSFET GAN 48V 6DFN

The MMRF1050H RF power transistor is designed for short pulse applications operating at frequencies from 850 to 950 MHz.

Airfast RF Power LDMOS Transistor, 700 W Pulse over 960-1215 MHz, 52 V / REEL RoHS Compliant: Yes

Airfast RF Power LDMOS Transistor, 720-960 MHz, 100 W AVG., 48 V / REEL RoHS Compliant: Yes

N-Channel Enhancement-Mode Lateral MOSFET. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. The transistor is also suitable for wideband power amplifier applications from 600 to 1000 MHz and saturated power levels up to 500 watts.

Manufacturer: NXP
Win Source Part Number: 768337-AFV09P350-04NR3
Packaging: Reel package
Package: OM780-4
Frequency: 920MHz
Current - Test: 860mA
Gain: 19.5dB
Transistor Type: LDMOS (Dual)
Voltage - Test: 48V
Power - Output: 100W
Family Name: AFV09P350-04NR3
Categories: Discrete Semiconductor Products
Manufacturer Package: OM780-4
Voltage Rating DC: 105V
Introduction Date: December 20, 2013
ECCN: EAR99
Estimated EOL Date: 2032
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited

This 107 W asymmetrical Doherty RF power LDMOS transistor is designedfor cellular base station applications covering the frequency range of 720 to960 MHz.

Manufacturer: NXP
Win Source Part Number: 858894-A2V09H300-04NR3
Features: RF Mosfet LDMOS 48 V 400 mA 720MHz ~ 960MHz 19.7dB 53dBm OM-780G-4L
Package: Reel - TR
Package: OM-780G-4L
Family Name: A2V09
Categories: Discrete Semiconductor Products
Case / Package: OM-780G-4L
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
Quantity per package: 250
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 25 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075

Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.

RF Mosfet LDMOS 28V 450mA 880MHz 21.1dB 14W TO-270-2

Wolfspeed introduces its latest breakthrough in SiC power device technology with the industry’s only 1kV SiC MOSFET in a newly optimized package suitable for fast switching devices. Optimized for electric-vehicle charging systems, and three-phase industrial power supplies, the new 1kV device addresses many power design challenges by providing a unique device with low on-Resistance, very low output capacitance and low source inductance for a perfect blend of low switching losses and low conduction losses. Check out the new 20kW LLC reference design which includes schematics and BOM to reduce your development time and get your products to the market faster.

Features

• Minimum of 1kV Vbr across entire operating temperature range (no need to derate)
• New low-impedance package with driver source
• > 8mm of creepage/clearance between drain and source
• High-speed switching with low output capacitance
• High blocking voltage with low R_DS(on)
• Avalanche ruggedness
• Fast intrinsic diode with low reverse recovery (Qrr)
• Easy to parallel and simple to drive

RF MOSFET LDMOS 28V PLD-1.5

Wolfspeed introduces its latest breakthrough in SiC power device technology with the industry’s only 1kV SiC MOSFET in a newly optimized package suitable for fast switching devices. Optimized for electric-vehicle charging systems, and three-phase industrial power supplies, the new 1kV device addresses many power design challenges by providing a unique device with low on-Resistance, very low output capacitance and low source inductance for a perfect blend of low switching losses and low conduction losses. Check out the new 20kW LLC reference design which includes schematics and BOM to reduce your development time and get your products to the market faster.

Features

• Minimum of 1kV Vbr across entire operating temperature range (no need to derate)
• low source inductance package with separate driver source pin
• > 8mm of creepage/clearance between drain and source
• High-speed switching with low output capacitance
• High blocking voltage with low R_DS(on)
• Avalanche ruggedness

RF MOSFET GAN 50V 55-QQ

Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.

The 0912GN-300V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 19dB gain, 300 Watts of pulsed RF output power at 128us pulse width, 10% duty factor across the 960 to 1215 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is designed for avionic applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.

RF MOSFET HEMT 50V 55-KR

Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.

RF MOSFET HEMT 50V 55-KR

N-Channel 600V 43A (Tc) 565W (Tc) Chassis Mount ISOTOP®

MOSFET N-CH 1000V 34A ISOTOP

Win Source Part Number: 1007749-DRF1510
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Package: Bulk
Standard Package: 1
Fake Threat In the Open Market: 55 pct.
Mfr: Microchip Technology
Other Names: 150-DRF1510

RF MOSFET HEMT 50V 55-Q03

Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.

RF MOSFET 28V 375-04

RF MOSFET Transistors VHV6 300W50VISM NI780H-4

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.

These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

Manufacturer: M/A-Com Technology Solutions
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1026467-UF2840P
Packaging: Bulk
Number of Elements: 2
Number of Pins: 5
Categories: Transistors - FETs, MOSFETs - RF
Max Frequency: 500 MHz
Alternative Parts (Cross-Reference): SD57045; GBPC3502W-E4/51; SD57030;
Popularity: Low
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 200 °C
Mount: Screw
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Max Power Dissipation: 116 W
Continuous Drain Current (ID): 4 A
Gate to Source Voltage (Vgs): 20 V

RF MOSFET LDMOS NI1230

The ARF475FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.

RF Power Field-Effect Transistor

Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.

RF Mosfet LDMOS (Dual) 50V 700MHz ~ 1.3GHz 20.6dB 650W NI-1230-4H

Win Source Part Number: 1031510-APT1201R6BVFRG
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: POWER MOS V®
Package: Tube
Standard Package: 1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
Alternative Parts (Cross-Reference): STW11NK100Z; STW12NK95Z; STW11NK90Z; FQH8N100C; IPW90R1K0C3FKSA1; IPW90R800C3FKSA1;
ECCN: EAR99
Fake Threat In the Open Market: 53 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Microchip Technology
Base Product Number: APT1201

RF MOSFET LDMOS 13.6V TO270-2

Designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push-pull configuration.

RF MOSFET 28V

MOSFET N-CH 1000V 21A TO264

N-Channel 600V 38A (Tc) Through Hole TO-264 [L]

SIC 4N-CH 1700V 179A

Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 1700-V 45mOhm SiC MOSFET. MOSFET is designed to support new 1500V bus applications in topologies such a boost converters and Aux power supplies. Optimized for high-frequency power electronics applications, including renewable-energy inverters, battery charging systems, and three-phase industrial power supplies, the new 1700-V platform enables smaller and higher-efficiency next-generation power conversion systems.

Features

• 1700V of blocking voltage with low R_DS(on)
• High-speed switching with low capacitances
• Avalanche ruggedness
• Fast intrinsic diode with low reverse recovery (Q_rr)
• Easy to parallel and simple to drive

TRANS SJT N-CH 1200V 103A TO247