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Technical Specifications

Results: 66 found66 Results

0.03 - 3 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor -- TGF2965-SM

Qorvo's TGF2965-SM is a 6W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 0.03 to 3.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.

The device is housed in an industry-standard 3 x 3 mm surface mount QFN package.

Lead-free and ROHS compliant.

Evaluation boards are available upon request.

For additional information on GaN thermal performance refer to the following application note and video.

Technical Specifications

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Technical Specifications

0.03 - 3 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor -- TGF2965-SM

0.03 - 3.0 GHz, 10 Watt, 32 Volt GaN RF Input-Matched Transistor -- TGF3015-SM

0.03 - 4.0 GHz, 30 Watt, 32 V GaN RF Transistor -- TGF3021-SM

1.2 - 1.4 GHz, 500 Watt, 50 Volt, GaN RF IMFET -- QPD1003

1.2 - 1.4 GHz, 750 Watt, 65 Volt GaN on SiC RF Transistor -- QPD1028L

1.2 - 1.4 GHz, 750 Watt, 65 Volt, GaN on SiC RF Transistor -- QPD1028

100 W, DC-3.5 GHz, GaN RF Transistor -- QPD2929L

1300 Watt, 65 Volt, 420 - 450 MHz GaN RF Input-Matched Transistor -- QPD1026L

1500 Watt, 65 Volt, 1.2 - 1.4 GHz, GaN RF Input-Matched Transistor -- QPD1029L

15W, 30-1200 MHz, GaN RF Input-Matched Transistor -- QPD1014A

15W, 30-1215 MHz, GaN RF Input-Matched Transistor -- QPD1000A

1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor -- QPD1025

1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor -- QPD1025L

2.5 - 5.0 GHz, 8 Watt, 48 Volt GaN RF Transistor -- QPD0005

25W, 30-1200 MHz, GaN RF Input-Matched Transistor -- QPD1004A

300W, 1-1.5 GHz, GaN on SiC RF Transistor -- QPD2560L

4 - 6 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor -- TGF3020-SM

45 - 1218 MHz, 36dB, 12V, GaAs pHEMT-MESFET, Edge QAM MCM -- RFAM3620

450 Watt, 50 Volt, 1.2 - 1.4 GHz GaN IMFET -- QPD1006

5 - 300 MHz, 35 dB, 12 V, Si BJT Reverse MCM -- QPA5368

500 Watt, 50 Volt, DC - 1.7 GHz, GaN RF Transistor -- QPD1016

500 Watt, 50 Volt, DC - 1.7 GHz, GaN RF Transistor -- QPD1016L

7W, 30-1200 MHz, GaN RF Input-Matched Transistor -- QPD1011A

DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor -- QPD1022

DC - 12 GHz, 20 Watt, 32 V GaN RF Transistor -- TGF2978-SM

DC - 12 GHz, 25 Watt, 32 Volt GaN RF Transistor -- TGF2979-SM

DC - 12 GHz, 27 Watt Discrete Power GaN on SiC HEMT -- TGF2954

DC - 12 GHz, 5 Watt, 32 V GaN RF Transistor -- TGF2977-SM

DC - 14 GHz, 100 Watt Discrete Power GaN on SiC HEMT -- TGF2023-2-20

DC - 14 GHz, 50 Watt Discrete Power GaN on SiC HEMT -- TGF2023-2-10

DC - 18 GHz, 12 Watt Discrete Power GaN on SiC HEMT -- TGF2023-2-02

DC - 18 GHz, 25 Watt Discrete Power GaN on SiC HEMT -- TGF2023-2-05

DC - 18 GHz, 6 Watt Discrete Power GaN on SiC HEMT -- TGF2023-2-01

DC - 2.7 GHz, 150 Watt, 65 Volt GaN RF Transistor -- QPD1013

DC - 20 GHz, 1200 um Discrete GaAs pHEMT Die -- QPD2120D

DC - 20 GHz, 1600 um Discrete GaAs pHEMT Die -- QPD2160D

DC - 20 GHz, 180 um Discrete GaAs pHEMT Die -- QPD2018D

DC - 20 GHz, 250 um Discrete GaAs pHEMT Die -- QPD2025D

DC - 20 GHz, 400 um Discrete GaAs pHEMT Die -- QPD2040D

DC - 20 GHz, 600 um Discrete GaAs pHEMT Die -- QPD2060D

DC - 20 GHz, 800 um Discrete GaAs pHEMT Die -- QPD2080D

DC - 25 GHz, 10 Watt, 28 V GaN RF Transistor -- TGF2936

DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor -- TGF2933

DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor -- QPD1008L

DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor -- QPD1008

DC - 3.5 GHz, 100 Watt, 28 V GaN RF Power Transistor -- TGF2929-FL

DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor -- T1G4020036-FL

DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor -- T1G4020036-FS

DC - 3.5 GHz, 55 Watt, 28 V GaN RF Power Transistor -- T2G4005528-FS

DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor -- QPD0060

Technical Specifications

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Transistor Type

Polarity

Transistor Grade / Operating Range

Package Type

Packing Method

Number of Transistors in the Chip

TJ

Power Gain

Output Power

Noise Figure

Operating Frequency

0.03 - 3 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor -- TGF2965-SM

0.03 - 3.0 GHz, 10 Watt, 32 Volt GaN RF Input-Matched Transistor -- TGF3015-SM

0.03 - 4.0 GHz, 30 Watt, 32 V GaN RF Transistor -- TGF3021-SM

1.2 - 1.4 GHz, 500 Watt, 50 Volt, GaN RF IMFET -- QPD1003

1.2 - 1.4 GHz, 750 Watt, 65 Volt GaN on SiC RF Transistor -- QPD1028L

1.2 - 1.4 GHz, 750 Watt, 65 Volt, GaN on SiC RF Transistor -- QPD1028

100 W, DC-3.5 GHz, GaN RF Transistor -- QPD2929L

1300 Watt, 65 Volt, 420 - 450 MHz GaN RF Input-Matched Transistor -- QPD1026L

1500 Watt, 65 Volt, 1.2 - 1.4 GHz, GaN RF Input-Matched Transistor -- QPD1029L

15W, 30-1200 MHz, GaN RF Input-Matched Transistor -- QPD1014A

15W, 30-1215 MHz, GaN RF Input-Matched Transistor -- QPD1000A

1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor -- QPD1025

1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor -- QPD1025L

2.5 - 5.0 GHz, 8 Watt, 48 Volt GaN RF Transistor -- QPD0005