P-Channel MOSFET, -60V, 64A, 14mΩ, SO8-FL, Logic Level Product overview: NVMFS5113PLT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -60V, 64A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, 64A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVMFS5113PLT1G can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 016638-IRG4PH50KDPBF
Packaging: Bulk
Mounting: Through Hole
Reverse Recovery Time (trr): 90ns
Input Type: Standard
Gate Charge: 180nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AC
Maximum Current Collector: 45A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 200W
Pulsed Collector Current: 90A
Collector-emitter saturation voltage(Max): 3.5V @ 15V, 24A
Total Switching Energy(Ets): 3.83mJ (on), 1.9mJ (off)
Turn-on and Turn-off delay time: 87ns/140ns
Testing Conditions: 800V, 24A, 5 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited

IGBT 600V 55A 200W TO247AC

MOSFET, P-CH, SINGLE, -0.13A, -5

MOSFET, P-CH, SINGLE, -0.3A, -60

TRANSISTOR, PNP, -0.6A, -60V, SO Product overview: PZT2907A from Good Ark Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -0.6A, -60V. Search-friendly keywords include transistor, BJT, switching, amplification, -0.6A, -60V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PZT2907A can be used for catalog matching and distributor lookup.

TRANS PNP 30V 1A SOT-23

TRANS PNP 100V 1A PCP

Bipolar Transistor, -100V, -1A, Low VCE(sat), (PNP)NPN Single PCP hFE = 200 - 400, SOT-89 / PCP-1, 1000-REEL Product overview: 2SA1416T-TD-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -100V, -1A, SOT-89. Search-friendly keywords include transistor, BJT, switching, amplification, -100V, -1A, SOT-89, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SA1416T-TD-E can be used for catalog matching and distributor lookup.

P-CH,-100V,-24A,RD(MAX)<85M@-10V

Bipolar (BJT) Transistor PNP 100V 2A 300MHz 3.5W Surface Mount PCP

Win Source Part Number: 1036759-2SB1215S-E
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Bulk
Standard Package: 500
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TP
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): 2SB1215T-E; 2SB1215T-H; 2SB1216S-E2SB1215SE;
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Mfr: onsemi
Other Names: 2156-2SB1215S-E,ONSONS2SB1215S-E
Base Product Number: 2SB1215

Win Source Part Number: 1193596-2SB1215T-H
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Bulk
Standard Package: 500
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 130MHz
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TP
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): 2SB1215TH;
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Mfr: onsemi
Other Names: 2832-2SB1215T-H,2832-2SB1215T-H-488
Base Product Number: 2SB1215
Product Status: Not For New Designs

Bipolar Transistor, -100V, -3A, Low VCE(sat), PNP Single, TP/TP-FA, DPAK / TP-FA, 700-REEL Product overview: 2SB1215S-TL-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -100V, -3A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, -100V, -3A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1215S-TL-E can be used for catalog matching and distributor lookup.

Bipolar Transistor, -100V, -3A, Low VCE(sat), PNP Single, TP/TP-FA, DPAK / TP-FA, 700-REEL Product overview: 2SB1215T-TL-H from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -100V, -3A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, -100V, -3A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1215T-TL-H can be used for catalog matching and distributor lookup.

MOSFET P-CH 100V 8.8A TO252

POWER FIELD-EFFECT TRANSISTOR, 19A I(D), 100V, 0.2OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

P-CH, -100V, 20A, RD(MAX)<116M@-

Bipolar (BJT) Transistor PNP 100V 2A 30W Through Hole TO-220-3

MOSFET P-CH 100V 6.8A TO220AB

Manufacturer: Vishay
Win Source Part Number: 1249482-SI7489DP-T1-E3
Series: TrenchFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: PowerPAK SO-8
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Homepage: www.vishay.com
Manufacturer Package: PowerPAK SO-8
Channel Type Type: P
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 160nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 4600pF @ 50V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 5.2W (Ta), 83W (Tc)
Rds On (Maximum) @ Id, Vgs: 41 mOhm @ 7.8A, 10V
Alternative Parts (Cross-Reference): SI7489DP-T1-GE3;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001261-FQT5P10TF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.2nC @ 10V
Max Input Capacitance: 250pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.05 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Audio, Motor Drive & Control
Quantity per package: 4k pcs

P40V,RD(MAX)<10M@-10V,VTH-1.2V~-

P60V,RD(MAX)<18M@-10V,VTH-2V~-3V

P60V,RD(MAX)<52M@-10V,VTH-2V~-3.

P-Channel 60V 65A (Tc) 130W (Tc) Surface Mount TO-252

P-Channel 40V 45A (Tc) 80W (Tc) Surface Mount TO-252

P-Channel 30V 16A (Tc) 3W (Tc) Surface Mount 8-DFN (3.15x3.05)

P30V,RD(MAX)<59M@-10V,RD(MAX)<75

N-Channel 40V 5.3A (Ta) 2W (Ta) Surface Mount SOT-23-3

P30V,RD(MAX)<20M@-10V,RD(MAX)<26

P40V,RD(MAX)<35M@-10V,RD(MAX)<45

P40V,RD(MAX)<39M@-10V,RD(MAX)<70

N/P Channel: P-CH
Voltage(VDS): -60V
Current(ID): -6A
RDS(on): RD(max)<96mΩ@-10V
VTH: VTH-1.0V~-3.0V
Package: SOP-8

Single PNP Bipolar Transistor, -12 V, -3 A, CPH3, 3000-REEL Product overview: CPH3121-TL-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -12 V, -3 A. Search-friendly keywords include transistor, BJT, switching, amplification, -12 V, -3 A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-CPH3121-TL-E can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 1231157-NGTB40N120FL3WG
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-247-3
Power - Max: 454W
Reverse Recovery Time (trr): 136ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 160A
Switching Energy: 1.6mJ (on), 1.1mJ (off)
Input Type: Standard
Gate Charge: 212nC
Td (on/off) @ 25°C: 18ns/145ns
Test Condition: 600V, 40A, 10 Ohm, 15V
Family Name: NGTB40N120FL3W
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: TO-247-3
Current - Collector (Ic) (Maximum): 160A
Voltage - Collector Emitter Breakdown (Maximum): 1200V
Vce(on) (Maximum) @ Vge, Ic: 2.3V @ 15V, 40A
Alternative Parts (Cross-Reference): IKQ75N120CS6XKSA1; IXYB82N120C3H1;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited

Manufacturer: onsemi
Win Source Part Number: 1324946-FGY60T120SQDN
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Power - Max: 517 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 120 A
Current - Collector Pulsed (Icm): 240 A
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 60A
Input Type: Standard
Gate Charge: 311 nC
Td (on/off) @ 25°C: 52ns/296ns
Test Condition: 600V, 60A, 10Ohm, 15V
Supplier Device Package: TO-247-3
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: TO-247-3 Variant
ECCN: EAR99
Fake Threat In the Open Market: 74
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: FGY60T120SQDNOS,FGY60T120SQDN-ND
Base Product Number: FGY60
RoHS Status: ROHS3 Compliant

IGBT 1200V 75A UFS

TRANS 2PNP 120V 100MA SMV

MOSFET, P-Ch, Single, -12A, -30V, SOP-8

P-CHANNEL 12-V (D-S) MOSFET

Bipolar (BJT) Transistor PNP 12V 1A 450MHz 700mW Surface Mount 3-CPH

TRANS PNP 12V 3A 3CPH

Manufacturer: ON Semiconductor
Win Source Part Number: 261085-NTGS3447PT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 700mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 3.4A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 15nC @ 4.5V
Max Input Capacitance: 1053pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 40 mOhm @ 4.7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

P-Channel 12V 1.8A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR

P-Channel 12V 1.8A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR

MOSFET P-CH 12V 2.35A 6TSOP

P-Channel 12V 5.4A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR

-12V, P ch NexFET MOSFET™, single LGA 0.8x1.5, 35mOhm 3-PICOSTAR -55 to 150 Product overview: CSD23285F5T from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -12V, 35mOhm, LGA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -12V, 35mOhm, LGA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD23285F5T can be used for catalog matching and distributor lookup.

MOSFET P-CH 12V 4.1A SOT23-3