IC RAM 16MBIT 108MHZ 8SOIC Product overview: M30162040108X0PSAY from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 108MHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 108MHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-M30162040108X0PSAY can be used for catalog matching and distributor lookup.

The MR4A08B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 2,097,152 words of 8 bits. The MR4A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low voltage inhibit circuitry to prevent writes with voltage out of specification. The MR4A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR4A08BCMA35 is the 48-pin BGA package option operating over the industrial temperature range (-40 to +85°C) and shipped in trays.

The MR4A08B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 2,097,152 words of 8 bits. The MR4A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low voltage inhibit circuitry to prevent writes with voltage out of specification. The MR4A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR4A08BCYS35 is the 44-pin TSOP2 package option operating over the industrial temperature range (-40 to +85°C) and shipped in trays.

The MR4A08B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 2,097,152 words of 8 bits. The MR4A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low voltage inhibit circuitry to prevent writes with voltage out of specification. The MR4A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR4A08BMA35 is the 48-pin BGA package option operating over the commercial temperature range (0 to +70°C) and shipped in trays.

The MR4A08B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 2,097,152 words of 8 bits. The MR4A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low voltage inhibit circuitry to prevent writes with voltage out of specification. The MR4A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR4A08BYS35 is the 44-pin TSOP2 package option operating over the commercial temperature range (0 to +70°C) and shipped in trays.

The MR4A08B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 2,097,152 words of 8 bits. The MR4A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low voltage inhibit circuitry to prevent writes with voltage out of specification. The MR4A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR4A08BCMA35R is the 48-pin BGA package option operating over the industrial temperature range (-40 to +85°C) and shipped in tape and reel.
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The MR4A08B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 2,097,152 words of 8 bits. The MR4A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low voltage inhibit circuitry to prevent writes with voltage out of specification. The MR4A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly..
The MR4A08BCYS35R is the 44-pin TSOP2 package option operating over the industrial temperature range (-40 to +85°C) and shipped in tape and reel.

The MR4A08B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 2,097,152 words of 8 bits. The MR4A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low voltage inhibit circuitry to prevent writes with voltage out of specification. The MR4A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR4A08BMA35R is the 48-pin BGA package option operating over the commercial temperature range (0 to +70°C) and shipped in tape and reel.

The MR4A08B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 2,097,152 words of 8 bits. The MR4A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low voltage inhibit circuitry to prevent writes with voltage out of specification. The MR4A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR4A08BYS35R is the 44-pin TSOP2 package option operating over the commercial temperature range (0 to +70°C) and shipped in tape and reel.

The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR0A08BCSO35 is the 48-pin BGA package option in the industrial temperature operating range (-40 to +85°C) shipped in trays.

The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR0A08BYS35 is the 44-pin TSOP2 package option in the commercial temperature operating range (0 to +70°C) shipped in trays.

The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR0A08BCYS35R is the 44-pin TSOP2 package option in the industrial temperature operating range (-40 to +85°C) shipped in tape and reel.

The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR0A08BCYS35 is the 44-pin TSOP2 package option in the industrial temperature operating range (-40 to +85°C) shipped in trays.

The MR0D08B is a dual power supply 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. It supports I/O voltages from +1.65 to +3.6 volts. The MR0D08B offers SRAM compatible 45ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0D08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR0D08BMA45R is the 48-pin BGA package option in the commercial temperature operating range (0 to +70°C) and shipped in tape and reel.

The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR0A08BCMA35 is the 48-pin BGA package option in the industrial temperature operating range (-40 to +85°C) shipped in trays.

The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR0A08BMA35 is the 48-pin BGA package option in the commercial temperature operating range (0 to +70°C) shipped in trays.

The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR0A08BMA35R is the 48-pin BGA package option in the commercial temperature operating range (0 to +70°C) shipped in tape and reel.

The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR0A08BYS35R is the 44-pin TSOP2 package option in the commercial temperature operating range (0 to +70°C) shipped in tape and reel.

The MR0D08B is a dual power supply 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. It supports I/O voltages from +1.65 to +3.6 volts. The MR0D08B offers SRAM compatible 45ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0D08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR0D08BMA45 is the 48-pin BGA package option in the commercial temperature operating range (0 to +70°C) and shipped in trays.

The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR0A08BSO35 is the 32-pin SOIC package option in the commercial temperature operating range (0 to +70°C) shipped in trays.

The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR0A08BCMA35R is the 48-pin BGA package option in the industrial temperature operating range (-40 to +85°C) shipped in tape and reel.

The MR256A08B is a 262,144-bit magnetoresistive random access memory (MRAM) device organized as 32,768 words of 8 bits. The MR256A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
The MR256A08B is the ideal memory solution for applications that must permanently store and retrieve critical
data and programs quickly.
The MR256A08BCYS35 is the 44-pin TSOP2 package in the industrial temperature (-40 to +85 °C) range option shipped in trays.

The MR256A08B is a 262,144-bit magnetoresistive random access memory (MRAM) device organized as 32,768 words of 8 bits. The MR256A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
The MR256A08B is the ideal memory solution for applications that must permanently store and retrieve critical
data and programs quickly.
The MR256A08BCMA35 is the 48-pin ball grid array (BGA) package in the industrial temperature (-40 to + 85 °C) range option shipped in trays.

The MR256A08B is a 262,144-bit magnetoresistive random access memory (MRAM) device organized as 32,768 words of 8 bits. The MR256A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
The MR256A08B is the ideal memory solution for applications that must permanently store and retrieve critical
data and programs quickly.
The MR256A08BCMA35R is the 48-pin ball grid array (BGA) package in the industrial temperature (-40 to + 85 °C) range option shipped in tape and reel.

The MR256A08B is a 262,144-bit magnetoresistive random access memory (MRAM) device organized as 32,768 words of 8 bits. The MR256A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
The MR256A08B is the ideal memory solution for applications that must permanently store and retrieve critical
data and programs quickly.
The MR256A08BCYS35R is the 44-pin TSOP2 package in industrial temperature (-40 to + 85 °C) range option shipped shipped in tape and reel.

The MR256A08B is a 262,144-bit magnetoresistive random access memory (MRAM) device organized as 32,768 words of 8 bits. The MR256A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
The MR256A08B is the ideal memory solution for applications that must permanently store and retrieve critical
data and programs quickly.
The MR256A08BSO35 is the 32-pin SOIC package in the commercial temperature (0 to +70 °C) ) range option shipped in trays.

The MR256A08B is a 262,144-bit magnetoresistive random access memory (MRAM) device organized as 32,768 words of 8 bits. The MR256A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
The MR256A08B is the ideal memory solution for applications that must permanently store and retrieve critical
data and programs quickly.
The MR256A08BYS35 is the 44-pin TSOP2 package in the commercial temperature (0 to +70 °C) range option shipped in trays.

The MR256D08B is a 262,144-bit magnetoresistive random access memory (MRAM) device organized as 32,768 words of 8 bits. It supports I/O voltages from +1.65 to +3.6 volts. The MR256D08B offers SRAM compatible 45ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR256D08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR256D08BMA45 is the 48-pin ball grid array (BGA) package in the commercial temperature (0 to +70 °C) range option shipped in trays.

The MR256D08B is a 262,144-bit magnetoresistive random access memory (MRAM) device organized as 32,768 words of 8 bits. It supports I/O voltages from +1.65 to +3.6 volts. The MR256D08B offers SRAM compatible 45ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR256D08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR256D08BMA45R is the 48-pin ball grid array (BGA) package in the commercial temperature (0 to +70 °C) range option shipped in tape and reel.

The MR256A08B is a 262,144-bit magnetoresistive random access memory (MRAM) device organized as 32,768 words of 8 bits. The MR256A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
The MR256A08B is the ideal memory solution for applications that must permanently store and retrieve critical
data and programs quickly.
The MR256A08BMA35 is the 48-pin ball grid array (BGA) package in the commercial temperature (0 to +70 °C) range option shipped in trays.

The MR256A08B is a 262,144-bit magnetoresistive random access memory (MRAM) device organized as 32,768 words of 8 bits. The MR256A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
The MR256A08B is the ideal memory solution for applications that must permanently store and retrieve critical
data and programs quickly.
The MR256A08BCSO35 is the 32-pin SOIC package in the industrial temperature (-40 to +85 °C) range option shipped in trays.

The MR256A08B is a 262,144-bit magnetoresistive random access memory (MRAM) device organized as 32,768 words of 8 bits. The MR256A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
The MR256A08B is the ideal memory solution for applications that must permanently store and retrieve critical
data and programs quickly.
The MR256A08BMA35R is the 48-pin ball grid array (BGA) package in the commercial temperature (0 to +70 °C) range option shipped in tape and reel.

The MR256A08B is a 262,144-bit magnetoresistive random access memory (MRAM) device organized as 32,768 words of 8 bits. The MR256A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
The MR256A08B is the ideal memory solution for applications that must permanently store and retrieve critical
data and programs quickly.
The MR256A08BYS35R is the 44-pin TSOP2 package in the commercial temperature (0 to +70 °C) range option shipped in tape and reel.

Manufacturer: Everspin Technologies Inc.
Win Source Part Number: 109672-MR25H256CDC
Packaging: Tray
Mounting: SMD (SMT)
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 256Kb (32K x 8)
Family Name: MR25H256
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 8-DFN-EP, Large Flag (5x6)
Supply Voltage - Operating: 2.7 V to 3.6 V
Memory Format: RAM
Max Frequency: 40MHz
Alternative Parts (Cross-Reference): MR25H256CDCR;
Introduction Date: April 08, 2010
ECCN: EAR99
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Application Field: Used in Computers & Computer Peripherals, Wireless, Portable Devices, Sensing & Instrumentation, Industrial, Automotive
Quantity per package: 570

IC RAM 1MBIT SPI 40MHZ 8DFN Product overview: MR25H10CDF from Everspin Technologies, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40MHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 40MHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MR25H10CDF can be used for catalog matching and distributor lookup.

MRAM (Magnetoresistive RAM) Memory IC 256Kbit SPI 40 MHz 8-DFN (5x6)

Manufacturer: Everspin Technologies Inc.
Win Source Part Number: 141136-MR25H10CDC
Packaging: Tray
Mounting: SMD (SMT)
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 1Mb (128K x 8)
Family Name: MR25H10
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 8-DFN-EP, Large Flag (5x6)
Supply Voltage - Operating: 2.7 V to 3.6 V
Memory Format: RAM
Max Frequency: 40MHz
Alternative Parts (Cross-Reference): MR25H10CDCR; MR25H10MDC; MR25H10MDCR ;
Introduction Date: February 04, 2010
ECCN: EAR99
Country of Origin: Thailand
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Quantity per package: 570

MRAM (Magnetoresistive RAM) Memory IC 1Mbit SPI 40 MHz 8-DFN-EP, Small Flag (5x6)

IC RAM 1MBIT SPI 40MHZ 8DFN

IC RAM 1MBIT SPI 40MHZ 8DFN

MRAM (Magnetoresistive RAM) Memory IC 256Kb (32K x 8) SPI 40MHz 8-DFN (5x6)

IC RAM 256KBIT SPI 40MHZ 8DFN

IC RAM 256KBIT SPI 40MHZ 8DFN

IC RAM 256KBIT SPI 40MHZ 8DFN Product overview: MR25H256MDF from Everspin Technologies, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40MHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 40MHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MR25H256MDF can be used for catalog matching and distributor lookup.

Manufacturer: Everspin Technologies Inc.
Win Source Part Number: 810253-MR25H40CDC
Packaging: Tray
Mounting Style: SMD
Technology: MRAM (Magnetoresistive RAM)
Memory Type: Non-Volatile
Memory Size: 4Mb (512K x 8)
Supplier Device Package: 8-DFN-EP, Large Flag (5x6)
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: RAM
Clock Frequency: 40MHz
Memory Interface: SPI
Manufacturer Package: 8-VDFN Exposed Pad
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 570
MSL Level: 3 (168 Hours)
Supply Voltage (V): 3V ~ 3.6V

Manufacturer: Everspin Technologies Inc.
Win Source Part Number: 844480-MR25H40CDF
Operating Temperature Range: -40°C ~ 85°C (TA)
Features: MRAM (Magnetoresistive RAM) Memory IC 4Mb (512K x 8) SPI 8-DFN-EP, Small Flag (5x6)
Package: 8-VDFN Exposed Pad
Package: Tray
Mounting: Surface Mount
Family Name: MR25H40
Categories: Integrated Circuits (ICs)
Case / Package: 8-DFN-EP, Small Flag (5x6)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Quantity per package: 570
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 14 Weeks
REACH Status: REACH Unaffected
HTSUS: 8542.32.0071

IC RAM 4MBIT SPI 40MHZ 8DFN

IC RAM 4MBIT SPI 40MHZ 8DFN

IC RAM 4MBIT SPI 40MHZ 8DFN

The MR2A08A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device organized as 524,288 words of 8 bits. The MR2A08A offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The
MR2A08A is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR2A08ACYS35 is the 44-pin TSOP2 package option operating over the industrial temperature range (-40 to +85°C) and shipped in trays.