Please note: SMS7621-092 is being discontinued and is not recommended for new designs. The suggested replacement are SMS7621-040LF, SMS7621-079LF

The SMS7621-092 is a silicon, low barrier n-type Schottky diode anti-parallel pair. This diode pair can be used for sub-harmonic mixer circuits and other applications such as frequency multiplication.
The low barrier height produces a very small forward voltage. Together with the very low junction capacitance, the small forward voltage provides this diode pair with very low local oscillator power requirements.

The SMP1334-084LF is a surface-mountable, low-capacitance silicon PIN diode designed as a series-connected PIN diode for high-power, high-volume switch and attenuator applications from 10 MHz to beyond 6 GHz.
Typical resistance at 100 mA is 0.45 Ω and maximum capacitance at 30 V is 0.45 pF. The combination of low capacitance, low parasitic inductance, and nominal 50 μm I-region width, makes the SMP1334-084LF useful in large signal switches and attenuator applications.
The device has a 1 W dissipation power rating, which makes it capable of handling up to 100 W @ 25 °C Continuous Wave (CW) in a series-connected transmit/receive (T/R) switch.
Design information for high power switches may be found in the Skyworks Application Note, Design With PIN Diodes (document number 200312)(opens in a new tab).

The DSG9500-000 is designed for low resistance, low capacitance and fast switching time. The oxide-nitride passivation layers provide reliable operation and stable junction parameters that provide complete sealing of the junction permitting use in assemblies with some degree of moisture sealing. The DSG9500-000 is ideal for microstrip or stripline circuits and for circuits requiring high isolation from a series mounted diode such as broad band multi-throw switches, phase shifters, limiters, attenuators and modulators.

Skyworks APD series of silicon PIN diodes are designed for use as switch and attenuator devices in high-performance RF and microwave circuits. The PIN diode designs are useful over a wide range of frequencies from below 100 MHz to beyond 30 GHz. These devices use Skyworks well-established silicon technology resulting in PIN diodes with tightly controlled I-region characteristics.
The low capacitance and low resistance of the APD0505 through APD1520 diodes are ideal for switch applications that require insertion loss and fast switching speed. For switch or attenuator applications requiring high power and low distortion, the thick Iregion and high reverse breakdown voltage of the APD2220 is ideal.

Skyworks APD series of silicon PIN diodes are designed for use as switch and attenuator devices in high-performance RF and microwave circuits. The PIN diode designs are useful over a wide range of frequencies from below 100 MHz to beyond 30 GHz. These devices use Skyworks well-established silicon technology resulting in PIN diodes with tightly controlled I-region characteristics.
The low capacitance and low resistance of the APD0505 through APD1520 diodes are ideal for switch applications that require insertion loss and fast switching speed. For switch or attenuator applications requiring high power and low distortion, the thick Iregion and high reverse breakdown voltage of the APD2220 is ideal.

The CLA4610-085LF is a surface-mountable, low-capacitance silicon PIN limiter diode designed as a shunt-connected PIN diode for high-power limiter applications from 10 MHz to over 6 GHz.
Maximum resistance at 10 mA is 2.2 Ω and maximum capacitance at 6 V is 0.32 pF. The combination of low junction capacitance, low parasitic inductance, low thermal resistance, and nominal 4.5 μm I-region width makes the CLA4610-085LF useful in large signal-limiter applications. The threshold level is +15 dBm, nominal.

Skyworks CLA series of silicon limiter diodes provides passive receiver protection over a wide range of frequencies from 100 MHz to over 30 GHz. These devices use Skyworks wellestablished silicon technology resulting in high resistivity and tightly controlled base width PIN limiter diodes. Limiter circuits using these devices perform with strong limiting action and low loss.
The CLA series consists of ten individual chip designs of different intrinsic region base widths and capacitances designed to accommodate multi-stage limiter applications. The CLA4610-000 are planar designs designated for high-power and mid-range applications.

The SMV1270-079LF is a silicon hyperabrupt junction varactor diode specifically designed for battery operation. The specified high-capacitance ratio and low reverse voltage make this varactor appropriate for low-noise voltage-controlled oscillators (VCOs) used at frequencies in wireless systems up to and above 2.5 GHz.

Please note: SMV1206-079LF is being discontinued and is not recommended for new designs. The suggested replacement is SMV2026-079LF

The SMV1206-079LF is a surface mount varactor diode designed for very low series resistance applications such as RF and microwave VCOs.

The CLA4607-085LF is a surface mountable, low capacitance silicon PIN limiter diode designed as a shunt connected PIN diode for high power limiter applications from 10 MHz to over 6 GHz.
Maximum resistance at 10 mA is 2 Ω and maximum capacitance at 38 V is 0.35 pF. The combination of low junction capacitance, low parasitic inductance, low thermal resistance, and nominal 7 μm I-region width, makes the CLA4607-085LF useful in large signal limiter applications. The threshold level is +20 dBm, nominal.

The CLA4611-085LF is a surface mountable, low capacitance silicon PIN limiter diode designed as a shunt connected PIN diode for high power limiter applications from 10 MHz to over 6 GHz.
Maximum resistance at 10 mA is 1.2 Ω and maximum capacitance at 38 V is 0.25 pF. The combination of low junction capacitance, low parasitic inductance, low thermal resistance, and nominal 12 μm I-region width, makes the CLA4611-085LF useful in large signal limiter applications. The threshold level is +25 dBm, nominal.

The CLA4608-085LF is a surface mountable, low capacitance silicon PIN limiter diode designed as a shunt connected PIN diode for high power limiter applications from 10 MHz to over 6 GHz.
Maximum resistance at 10 mA is 1.2 Ω and maximum capacitance at 38 V is 0.65 pF. The combination of low junction capacitance, low parasitic inductance, low thermal resistance, and nominal 7 μm I-region width, makes the CLA4608-085LF useful in large signal limiter applications. The threshold level is +20 dBm, nominal.

Skyworks CLA series of silicon limiter diodes provides passive receiver protection over a wide range of frequencies from 100 MHz to over 30 GHz. These devices use Skyworks wellestablished silicon technology resulting in high resistivity and tightly controlled base width PIN limiter diodes. Limiter circuits using these devices perform with strong limiting action and low loss.
The CLA series consists of nine individual chip designs of different intrinsic region base widths and capacitances designed to accommodate multi-stage limiter applications. The CLA4607-000 are planar designs designated for high-power and mid-range applications.

Skyworks CLA series of silicon limiter diodes provides passive receiver protection over a wide range of frequencies from 100 MHz to over 30 GHz. These devices use Skyworks wellestablished silicon technology resulting in high resistivity and tightly controlled base width PIN limiter diodes. Limiter circuits using these devices perform with strong limiting action and low loss.
The CLA series consists of nine individual chip designs of different intrinsic region base widths and capacitances designed to accommodate multi-stage limiter applications. The CLA4608-000 are planar designs designated for high-power and mid-range applications.

Please note: SMP1304-087LF is being discontinued and is not recommended for new designs. The suggested replacement is SMP1304-079LF

The SMP1304-087LF is a surface mountable PIN diode suitable for use in an RF switch or attenuator circuit.
Maximum resistance at 100 mA is 2.0 Ω and maximum capacitance at 30 V is 0.3 pF. The combination of low capacitance, low parasitic inductance, low thermal resistance, and nominal 100 μm I-region width, makes the SMP1304-087LF useful in large signal switches and attenuator applications.
The device has a 3 W dissipation power rating, which makes it capable of handling up to 125 W @ 25 °C Continuous Wave (CW) in a series-connected transmit/receive (T/R) switch.
Design information for high power switches may be found in the Skyworks Application Note, Design With PIN Diodes (document number 200312)(opens in a new tab).

The SMP1302-087LF is a surface-mountable, low-capacitance silicon PIN diode designed as a series-connected PIN diode for high-power, high-volume switch and attenuator applications from 10 MHz to beyond 6 GHz.
Maximum resistance at 100 mA is 1.5 Ω and maximum capacitance at 30 V is 0.35 pF. The combination of low capacitance, low parasitic inductance, and nominal 50 μm I-region width, makes the SMP1302-087LF useful in large signal switches and attenuator applications.
The device has a 1 W dissipation power rating, which makes it capable of handling up to 125 W @ 25 °C Continuous Wave (CW) in a series-connected transmit/receive (T/R) switch.
Design information for high power switches may be found in the Skyworks Application Note, Design With PIN Diodes (document number 200312)(opens in a new tab).

The SMP1304-085LF is a surface mountable, low capacitance silicon PIN diode designed as a shunt connected PIN diode for high power, high volume switch and attenuator applications from 10 MHz to beyond 6 GHz.
Maximum resistance at 100 mA is 2 Ω and maximum capacitance at 30 V is 0.3 pF. The combination of low junction capacitance, low parasitic inductance, low thermal resistance, and nominal 100 μm I-region width, makes the SMP1304-085LF useful in large signal switches and attenuator applications.
The device has a 3 W dissipation power rating, making it capable of handling more than 100 W Continuous Wave (CW) and 500 W peak (1 μs pulse, 1 percent duty cycle) in a shunt-connected transmit/receive (T/R) switch.
Design information for high power switches may be found in the Skyworks Application Note, Design With PIN Diodes (document number 200312)(opens in a new tab).

The SMPA1302-079LF plastic packaged, surface mountable, low capacitance (0.3 pF) silicon PIN diode is designed for switch and attenuator applications used in vehicle infotainment.
The nominal 50 μm I region width, combined with a maximum resistance of 3 Ω at 10 mA, makes these diodes useful in large signal switch applications.
The low capacitance (< 0.30 pF) is ideal for high isolation switching, and the long lifetime (700ns) makes this part ideal for low distortion attenuator applications.

The SMPA1304-011LF plastic packaged, surface mountable, low capacitance (0.3 pF) silicon PIN diode is designed for attenuator applications from 5 MHz to beyond 2 GHz.
The thick 100 μm I region of this PIN diode makes this device very attractive for use in low distortion attenuators in vehicle infotainment applications.
The 1 μs typical carrier lifetime of this diode results in a resistance of 20 Ω maximum at 1 mA and 7 Ω maximum at 10 mA.

The SMP1302-085LF is a surface mountable, low capacitance silicon PIN diode designed as a shunt connected PIN diode for high power, high volume switch and attenuator applications from 10 MHz to beyond 6 GHz.
Maximum resistance at 100 mA is 1.5 Ω and maximum capacitance at 30 V is 0.3 pF. The combination of low junction capacitance, low parasitic inductance, low thermal resistance, and nominal 50 μm I-region width, makes the SMP1302-085LF useful in large signal switches and attenuator applications.
The device has a 3 W dissipation power rating, making it capable of handling more than 50 W Continuous Wave (CW) and 500 W peak (1 μs pulse, 1 percent duty cycle) in a shunt-connected transmit/receive (T/R) switch.

The SMP1325-085LF is a surface mountable, low capacitance silicon PIN diode designed as a shunt connected PIN diode for high power, high volume switch and attenuator applications from 10 MHz to beyond 6 GHz.
Maximum resistance at 100 mA is 0.5 Ω and maximum capacitance at 20 V is 0.65 pF. The combination of low junction capacitance, low parasitic inductance, low thermal resistance, and nominal 100 μm I-region width, makes the SMP1325-085LF useful in large signal switches and attenuator applications.
The device has a 3 W dissipation power rating, making it capable of handling more than 50 W Continuous Wave (CW) and 500 W peak (1 μs pulse, 1 percent duty cycle) in a shunt-connected transmit/receive (T/R) switch.
Design information for high power switches may be found in the Skyworks Application Note, Design With PIN Diodes (document number 200312)(opens in a new tab).

The SMP1331-087LF is a surface mountable, low-capacitance silicon PIN diode designed as a series connected PIN diode for high-power, high-volume switch and attenuator applications from 10 MHz to beyond 6 GHz.
Typical resistance at 100 mA is 0.50 Ω and maximum capacitance at 30 V is 0.35 pF. The combination of low capacitance, low parasitic inductance, and nominal 30 μm I-region width, makes the SMP1331-087LF useful in large signal switches and attenuator applications.
The device has a 0.75 W dissipation power rating, which makes it capable of handling up to 45 W @ 85 °C Continuous Wave (CW) in a series-connected transmit/receive (T/R) switch.
Design information for high-power switches may be found in the Skyworks Application Note, Design With PIN Diodes (document number 200312).

Skyworks APD series of silicon PIN diodes are designed for use as switch and attenuator devices in high-performance RF and microwave circuits. The PIN diode designs are useful over a wide range of frequencies from below 100 MHz to beyond 30 GHz. These devices use Skyworks well-established silicon technology resulting in PIN diodes with tightly controlled I-region characteristics.
The low capacitance and low resistance of the APD0505 through APD1520 diodes are ideal for switch applications that require insertion loss and fast switching speed. For switch or attenuator applications requiring high power and low distortion, the thick Iregion and high reverse breakdown voltage of the APD2220 is ideal.

The SKY16602-632LF is a fully integrated PIN diode lowthreshold limiter module in a surface-mount package. It is designed for use as a passive receiver protector in wireless or other RF systems for frequencies up to 4 GHz. It features a low limiting threshold, low-insertion loss, and low distortion in a single Micro Leadframe Package (MLP).
The SKY16602-632LF module is comprised of a PIN limiter diode, a Schottky diode, and 2 DC blocking caps at the RF ports in a 2– lead MLP. The small package design reduces printed circuit board area. The module can be tuned using external Surface Mount Technology (SMT) components for optimal narrow band performance over the 0.2 to 4.0 GHz operating range.
The module can operate over the temperature range of –40˚C to +85˚C.

The CLA4609-086LF is a surface mountable, low capacitance silicon PIN limiter diode designed as a shunt connected PIN diode for high power limiter applications from 10 MHz to over 6 GHz.
Maximum resistance at 100 mA is 1.5 Ω and maximum capacitance at 30 V is 0.6 pF. The combination of low junction capacitance, low parasitic inductance, low thermal resistance, and nominal 28 μm I-region width, makes the CLA4609-086LF useful in large signal limiter applications. The threshold level is +36 dBm, nominal.

The SMP1324-087LF is a surface mountable PIN diode suitable for use in an RF switch or attenuator circuit.
Maximum resistance at 50 mA is 0.75 Ω and maximum capacitance at 30 V is 1.5 pF. The combination of low capacitance, low parasitic inductance, low thermal resistance, and nominal 100 μm I-region width, makes the SMP1324-087LF useful in large signal switches and attenuator applications.
The device has a 2 W dissipation power rating, which makes it capable of handling up to 50 W Continuous Wave (CW) and 500 W peak (1 μs pulse, 1 percent duty cycle) in a shunt-connected transmit/receive (T/R) switch.
Design information for high power switches may be found in the Skyworks Application Note, Design With PIN Diodes (document number 200312)(opens in a new tab).

The SMP1325-087LF is a surface mountable PIN diode suitable for use in an RF switch or attenuator circuit.
Maximum resistance at 100 mA is 0.55 Ω and maximum capacitance at 20 V is 0.6 pF. The combination of low capacitance, low parasitic inductance, low thermal resistance, and nominal 100 μm I-region width, makes the SMP1325-087LF useful in large signal switches and attenuator applications.
The device has a 2 W dissipation power rating, which makes it capable of handling up to 50 W Continuous Wave (CW) and 500 W peak (1 μs pulse, 1 percent duty cycle) in a shunt-connected transmit/receive (T/R) switch.
Design information for high power switches may be found in the Skyworks Application Note, Design With PIN Diodes (document number 200312)(opens in a new tab).

The SMV1801-079LF is a silicon hyperabrupt junction varactor diode specifically designed for battery operation.The specified high capacitance ratio and low R_S of this varactor make it appropriate for low noise VCOs used at frequencies in wireless systems to frequencies beyond 2.5 GHz. Applications include low noise and wideband UHF and VHF VCO for GSM, PCS, CDMA and analog phones.

Skyworks CLA series of silicon limiter diodes provides passive receiver protection over a wide range of frequencies from 100 MHz to over 30 GHz. These devices use Skyworks wellestablished silicon technology resulting in high resistivity and tightly controlled base width PIN limiter diodes. Limiter circuits using these devices perform with strong limiting action and low loss.
The CLA series consists of ten individual chip designs of different intrinsic region base widths and capacitances designed to accommodate multi-stage limiter applications. The mesaconstructed, thin base width, low capacitance CLA4601-000 are designed for low-level and cleanup applications.

Skyworks CLA series of silicon limiter diodes provides passive receiver protection over a wide range of frequencies from 100 MHz to over 30 GHz. These devices use Skyworks wellestablished silicon technology resulting in high resistivity and tightly controlled base width PIN limiter diodes. Limiter circuits using these devices perform with strong limiting action and low loss.
The CLA series consists of nine individual chip designs of different intrinsic region base widths and capacitances designed to accommodate multi-stage limiter applications. The mesaconstructed, thin base width, low capacitance CLA4602-000 are designed for low-level and cleanup applications.

Skyworks CLA series of silicon limiter diodes provides passive receiver protection over a wide range of frequencies from 100 MHz to over 30 GHz. These devices use Skyworks wellestablished silicon technology resulting in high resistivity and tightly controlled base width PIN limiter diodes. Limiter circuits using these devices perform with strong limiting action and low loss.
The CLA series consists of nine individual chip designs of different intrinsic region base widths and capacitances designed to accommodate multi-stage limiter applications. The CLA4609-000 thick base width mesa diode is designed for coarse limiter-stage applications.

The SMP1371-087LF is a surface mountable PIN diode suitable for use in an RF switch or attenuator circuit.
Maximum resistance at 10 mA is 0.5 Ω and maximum capacitance at 20 V is 1.2 pF. The combination of low capacitance, low parasitic inductance, low thermal resistance, and nominal 12 μm I-region width, makes the SMP1371-087LF useful in fast, large signal switch applications.
The device has a 2 W dissipation power rating, which makes it capable of handling up to 23 W Continuous Wave (CW) and 300 W peak (1 μs pulse, 1 percent duty cycle) in a shunt-connected transmit/receive (T/R) switch.
Design information for high power switches may be found in the Skyworks Application Note, Design With PIN Diodes (document number 200312)(opens in a new tab).

Please note: SKY16601-555LF is being discontinued and is not recommended for new designs. The suggested replacement is CLA4603-085LF

The SKY16601-555LF is a fully integrated PIN diode lowthreshold limiter module in a surface-mount package. It is designed for use as a passive receiver protector in wireless or other RF systems for frequencies up to 6 GHz. It features lowinsertion loss and low distortion in a single MLP package.
The SKY16601-555LF module is comprised of a PIN limiter diode, an RF choke inductor, and 2 DC blocking caps at the RF ports in a 2-lead MLP package. The small package design reduces printed circuit board area.
The module can operate over the temperature range of –40 ˚C to +85 ˚C.

The CLA4603-085LF is a surface mountable, low capacitance silicon PIN limiter diode designed as a shunt connected PIN diode for high power limiter applications from 10 MHz to over 10 GHz.
Maximum resistance at 10 mA is 2 Ω and maximum capacitance at 6 V is 0.4 pF. The combination of low junction capacitance, low parasitic inductance, low thermal resistance, and nominal 1.5 um I-region width, makes the CLA4603-085LF useful in large signal limiter applications. The threshold level is +9 dBm, nominal.

Skyworks CLA series of silicon limiter diodes provides passive receiver protection over a wide range of frequencies from 100 MHz to over 30 GHz. These devices use Skyworks wellestablished silicon technology resulting in high resistivity and tightly controlled base width PIN limiter diodes. Limiter circuits using these devices perform with strong limiting action and low loss.
The CLA series consists of nine individual chip designs of different intrinsic region base widths and capacitances designed to accommodate multi-stage limiter applications. The CLA4603-000 are planar designs designated for high-power and mid-range applications.

The SMP1331-085LF is a surface mountable, low capacitance silicon PIN diode designed as a shunt connected PIN diode for high power, high volume switch and attenuator applications from 10 MHz to beyond 6 GHz.
Maximum resistance at 100 mA is 0.5  and typical capacitance at 30 V is 0.35 pF. The combination of low junction capacitance, low parasitic inductance, low thermal resistance, and nominal 30 m I-region width, makes the SMP1331-085LF useful in large signal switches and attenuator applications.
The device has a 2.5 W dissipation power rating, making it capable of handling more than 50 W @ 85 °C Continuous Wave (CW) in a shunt-connected transmit/receive (T/R) switch.
Design information for high power switches may be found in the Skyworks Application Note, Design With PIN Diodes (document number 200312).

The SMP1345-087LF is a surface mountable PIN diode suitable for use in an RF switch or attenuator circuit.
Maximum resistance at 10 mA is 2 Ω and maximum capacitance at 5 V is 0.2 pF. The combination of low capacitance, low parasitic inductance, low thermal resistance, and nominal 10 μm I-region width, makes the SMP1345-087LF useful in large signal switches and attenuator applications.
The device has a 2 W dissipation power rating, which makes it capable of handling up to 50 W Continuous Wave (CW) and 500 W peak (1 μs pulse, 1 percent duty cycle) in a shunt-connected transmit/receive (T/R) switch.
Design information for high power switches may be found in the Skyworks Application Note, Design With PIN Diodes (document number 200312)(opens in a new tab).

The SMPA1320-079LF plastic packaged, surface mountable PIN diode is designed for use in high volume switch applications from 10 MHz to more than 10 GHz. The low current performance of this diode (0.9 Ω maximum at 10 mA and 2 Ω typical at 1 mA) makes the SMPA1320-079LF particularly well suited for in-vehicle infotainment applications.

The SMP1330-085LF is a surface-mountable, low-capacitance silicon PIN limiter diode designed as a shunt connected PIN diode for high power limiter applications up to 6 GHz.
Maximum resistance at 10 mA is 2 Ω and maximum capacitance at 0 V is 0.55 pF. The combination of low junction capacitance, low parasitic inductance, low thermal resistance, and nominal 2 μm I-region width, makes the SMP1330-085LF useful in large signal limiter applications. The threshold level is +9 dBm at 1 GHz.

Skyworks APD series of silicon PIN diodes are designed for use as switch and attenuator devices in high-performance RF and microwave circuits. The PIN diode designs are useful over a wide range of frequencies from below 100 MHz to beyond 30 GHz. These devices use Skyworks well-established silicon technology resulting in PIN diodes with tightly controlled I-region characteristics.
The low capacitance and low resistance of the APD0505 through APD1520 diodes are ideal for switch applications that require insertion loss and fast switching speed. For switch or attenuator applications requiring high power and low distortion, the thick Iregion and high reverse breakdown voltage of the APD2220 is ideal.

Skyworks APD series of silicon PIN diodes are designed for use as switch and attenuator devices in high-performance RF and microwave circuits. The PIN diode designs are useful over a wide range of frequencies from below 100 MHz to beyond 30 GHz. These devices use Skyworks well-established silicon technology resulting in PIN diodes with tightly controlled I-region characteristics.
The low capacitance and low resistance of the APD0505 through APD1520 diodes are ideal for switch applications that require insertion loss and fast switching speed. For switch or attenuator applications requiring high power and low distortion, the thick Iregion and high reverse breakdown voltage of the APD2220 is ideal.

The CLA4605-085LF is a surface-mountable, low-capacitance silicon PIN limiter diode designed as a shunt connected PIN diode for high power limiter applications from 10 MHz to over 6 GHz.
Maximum resistance at 10 mA is 2 Ω and maximum capacitance at 6 V is 0.45 pF. The combination of low junction capacitance, low parasitic inductance, low thermal resistance, and nominal 2 um I-region width, makes the CLA4605-085LF useful in large signal limiter applications. The threshold level is +9 dBm, nominal.

Skyworks’ Silicon Mesa Beam Lead PIN diode is surrounded by a glass frame for superior strength and electrical performance that surpasses the standard beam lead PINs. The DSM8100-000 is designed for low resistance, low capacitance and fast switching time. The oxide-nitride passivation layers provide reliable operation and stable junction parameters that provide complete sealing of the junction permitting use in assemblies with some degree of moisture sealing. A layer of glass provides increased mechanical strength.
The DSM8100 is ideal for microstrip or stripline circuits and for circuits requiring high isolation from a series mounted diode such as broad band multi-throw switches, phase shifters, limiters, attenuators and modulators.

Skyworks CLA series of silicon limiter diodes provides passive receiver protection over a wide range of frequencies from 100 MHz to over 30 GHz. These devices use Skyworks wellestablished silicon technology resulting in high resistivity and tightly controlled base width PIN limiter diodes. Limiter circuits using these devices perform with strong limiting action and low loss.
The CLA series consists of nine individual chip designs of different intrinsic region base widths and capacitances designed to accommodate multi-stage limiter applications. The mesaconstructed, thin base width, low capacitance CLA4605-000 are designed for low-level and cleanup applications.

Skyworks CLA series of silicon limiter diodes provides passive receiver protection over a wide range of frequencies from 100 MHz to over 30 GHz. These devices use Skyworks wellestablished silicon technology resulting in high resistivity and tightly controlled base width PIN limiter diodes. Limiter circuits using these devices perform with strong limiting action and low loss.
The CLA series consists of nine individual chip designs of different intrinsic region base widths and capacitances designed to accommodate multi-stage limiter applications. The mesaconstructed, thin base width, low capacitance CLA4604-000 are designed for low-level and cleanup applications.

The CLA4606-085LF is a surface mountable, low capacitance silicon PIN limiter diode designed as a shunt connected PIN diode for high power limiter applications from 10 MHz to over 6 GHz.
Maximum resistance at 10 mA is 2 Ω and maximum capacitance at 6 V is 0.38 pF. The combination of low junction capacitance, low parasitic inductance, low thermal resistance, and nominal 2.5 μm I-region width, makes the CLA4606-085LF useful in large signal limiter applications. The threshold level is +12 dBm, nominal.

Skyworks CLA series of silicon limiter diodes provides passive receiver protection over a wide range of frequencies from 100 MHz to over 30 GHz. These devices use Skyworks wellestablished silicon technology resulting in high resistivity and tightly controlled base width PIN limiter diodes. Limiter circuits using these devices perform with strong limiting action and low loss.
The CLA series consists of nine individual chip designs of different intrinsic region base widths and capacitances designed to accommodate multi-stage limiter applications. The CLA4606-000 are planar designs designated for high-power and mid-range applications. The

The SMV1405–SMV1413 series of bare die, epoxy and hermetic packaged silicon abrupt junction varactor diodes is designed for use in VCOs requiring tight capacitance tolerances. The low resistance of these varactors makes them appropriate for high Q resonators in wireless system VCOs to frequencies beyond 2.5 GHz. The devices are characterized for capacitance over temperature. SPICE models are provided.

The SMV1405–SMV1413 series of bare die, epoxy and hermetic packaged silicon abrupt junction varactor diodes is designed for use in VCOs requiring tight capacitance tolerances. The low resistance of these varactors makes them appropriate for high Q resonators in wireless system VCOs to frequencies beyond 2.5 GHz. The devices are characterized for capacitance over temperature. SPICE models are provided.

The SMV1405–SMV1413 series of bare die, epoxy and hermetic packaged silicon abrupt junction varactor diodes is designed for use in VCOs requiring tight capacitance tolerances. The low resistance of these varactors makes them appropriate for high Q resonators in wireless system VCOs to frequencies beyond 2.5 GHz. The devices are characterized for capacitance over temperature. SPICE models are provided.