The OLS2449 is specifically designed for high-reliability applications that require optical isolation in radiation environments such as gamma, neutron, and proton radiation with high current transfer ratio (CTR) and low saturation VCE. Each optocoupler channel consists of an LED and N-P-N silicon phototransistor that is electrically isolated, but optically coupled inside a hermetic 8-pin leadless chip carrier (LCC) package.
The electrical parameters are similar the JEDEC registered 4N49U optocoupler, but with a higher CTR and better CTR degradation characteristics due to radiation exposure.
The OLS2449 has 100 percent high-reliability screening parts available. Contact us for more details.

The OLS2249 is specifically designed for high-reliability applications that require optical isolation in radiation environments such as gamma, neutron, and proton radiation with high current transfer ratio (CTR) and low saturation VCE. Each optocoupler channel consists of an LED and N-P-N silicon phototransistor that is electrically isolated, but optically coupled inside a hermetic 8-pin leadless chip carrier (LCC) package.
The OLS2249 has 100 percent high-reliability screening parts available. Contact us for more details.

The OLF300ET is suitable for interfacing Transistor-Transistor Logic (TTL) to Low Power Schottky Transistor-Transistor Logic (LSTTL), TTL, or Complementary Metal Oxide Semiconductor (CMOS), as well as wide bandwidth analog applications. Each OLF300ET has an LED and an integrated photodiode transistor detector mounted and coupled in a custom 8-pin hermetic flatpack package, providing 1000 VDC of electrical isolation between the input and output. The integrated photodiode transistor improves the switching speed by orders of magnitude as compared to standard photo transistors by reducing the base-to-collector capacitance. The internal shield provides excellent common-mode immunity performance.

The OLH5630/5631 are dual-channel, hermetic 8-pin dual in-line package (DIP) optocouplers for high-speed digital applications. The OLH5631 product is a 100 percent high-reliability screened version of the OLH5630.
Each channel consists of an Aluminum Gallium Arsenide (AlGaAs) LED optically coupled to an integrated photodetector that provides 3000 VDC electrical isolation between the input and output. An internal shield provides excellent common mode rejection (CMR) performance.
The OLH5630/5631 products are functionally compatible to 6N134, 6N137, HCPL2601, and HCPL5600/5601 optocouplers.
Special CMR selection and lower threshold current are available upon request.

The OLH5600/5601 are hermetic 8-pin dual in-line package (DIP) optocouplers for high-speed digital applications. The OLH5601 product is a 100 percent high-reliability screened version of the OLH5600.
Each unit consists of an Aluminum Gallium Arsenide (AlGaAs) LED optically coupled to an integrated photodetector that provides 3000 VDC electrical isolation between the input and output. An internal shield provides excellent common mode rejection (CMR) performance.
The OLH5600/5601 products are functionally compatible to 6N134, 6N137, HCPL2601, and HCPL5600/5601 optocouplers.
Special CMR selection and lower threshold current are available upon request.

The OLH5500/5501 are hermetic 8-pin DIP optocouplers for wide bandwidth analog applications, as well as for interfacing Transistor-to-Transistor Logic (TTL) to Low-Power Schottky Transistor-Transistor Logic (LSTTL) or Complementary Metal Oxide Semiconductors (CMOS). The OLH5501 product is a 100 percent high-reliability screened version of the OLH5500.
Each unit consists of an Aluminum Gallium Arsenide (AlGaAs) LED optically coupled to an integrated photodiode transistor detector. The separate photodiode and transistor configuration improves speed performance significantly over phototransistors. The base of the transistor is available for gain and bandwidth adjustments.
The OLH5500/5501 products are functionally compatible to 6N135, 6N136, 4N55, and HCPL5500/5501 optocouplers, but with better common mode transient immunity. Special Current Transfer Ratio (CTR) selection or no-transistor base connection versions for improved noise immunity is available upon request.
The performance of the OLH5500/5501 under a radiation environment is significantly improved over standard phototransistors.

The OLH5530/5531 are dual-channel hermetic 8-pin DIP optocouplers for wide bandwidth analog applications, as well as for interfacing Transistor-to-Transistor Logic (TTL) to Low-Power Schottky Transistor-Transistor Logic (LSTTL) or Complementary Metal Oxide Semiconductors (CMOS). The OLH5531 product is a 100 percent high-reliability screened version of the OLH5530.
Each unit consists of an Aluminum Gallium Arsenide (AlGaAs) LED optically coupled to an integrated photodiode transistor detector. The separate photodiode and transistor configuration improves speed performance significantly over phototransistors.
The OLH5530/5531 products are functionally compatible to 6N135, 6N136, 4N55, and HCPL5530/5531 optocouplers, but with better common mode transient immunity. Special Current Transfer Ratio (CTR) selection is available upon request.
The performance of the OLH5530/5531 under a radiation environment is significantly improved over standard phototransistors.

The OLH7000 linear optocoupler consists of two LEDs in a series coupled to two PIN photodiode detectors.
The photodiode on the input side acts as a feedback device that permits an external feedback loop to ensure constant LED light output. A similar matching photodiode on the output side is used to drive an output circuit that is electrically isolated from the input. A fixed relationship is thus maintained between the input and output, and compensates for the LED's nonlinear, time, and temperature characteristics.
Each OLH7000 is mounted and coupled in a hermetic 8-pin ceramic dual in-line package (DIP) that provides 1000 VDC electrical isolation between the input and output.

The OLH5700/5701 are hermetic 8-pin dual in-line package (DIP) optocouplers for low input current applications. The OLH5701 product is a 100 percent high-reliability screened version of the OLH5700.
Each unit consists of an Aluminum Gallium Arsenide (AlGaAs) LED optically coupled to an integrated photodiode, split Darlington detector. The AlGaAs LED provides superior low current performance. The split Darlington open collector output results in high gain and low saturation voltage.
The OLH5700/5701 products are functionally compatible to 6N138, 6N139, and 6N140A optocouplers. The performance of the OLH5700/5701 products under a radiation environment is significantly improved over standard phototransistors.
Special low input current or current transfer ratio (CTR) selection are available upon request.

The OLH5730/5731 are dual-channel, hermetic 8-pin dual in-line package (DIP) optocouplers for low input current applications. The OLH5731 product is a 100 percent high-reliability screened version of the OLH5730.
Each channel consists of an Aluminum Gallium Arsenide (AlGaAs) LED optically coupled to an integrated photodiode, split Darlington detector. The AlGaAs LED provides superior low current performance. The split Darlington open collector output results in high gain and low saturation voltage.
The OLH5730/5731 products are functionally compatible to the HCPL2730/2731 and 6N140A optocouplers. The performance of the OLH5730/5731 products under a radiation environment is significantly improved over standard phototransistors.
Special low input current or current transfer ratio (CTR) selection are available upon request.

The OLH5800/5801 are optocoupled non-inverting drivers for power Metal Oxide Semiconductor/Silicon Field-Effect Transistor (MOSFET) loads at high-switching speeds where electrical isolation is required. The OLH5801 is a 100% high-reliability screened version of the OLH5800.
Each unit consists of an LED that is optically coupled to a Bi-polar Complementary Metal Oxide Semiconductor (BiCMOS) driver integrated circuit, and packaged in a hermetic 8-pin DIP that provides 3000 V of input/output insulation and over 10 kV/μs of CMR. The integrated driver and active pull-down circuit can drive high peak currents into a 1000 pF capacitive load (CLOAD) with fast output rise and fall times. Energizing the input IF = 10 mA LED produces a logic high output.
The UVLO circuitry in the output trips at 8 V, and forces the output low. The UVLO circuit with hysteresis ensures proper operation during power-up and prevents damage during brown-out conditions.
All terminals are fully protected against up to 4 kV of electrostatic discharge (ESD).

The OLH910 consists of a pair of LEDs that are optically coupled to a dielectrically isolated photovoltaic diode array, packaged in a hermetically-sealed, 8-pin dual in-line ceramic package. When the LED is energized, the infrared emission is detected by the photovoltaic array and a DC output voltage is generated. This electrically isolated voltage can be used to drive the gates of Metal Oxide Semiconductor (MOS) devices.

The OLS500 is suitable for high-speed digital interfacing applications, elimination of ground loops, and input/output buffering. Each OLS500 has an LED and integrated high-speed detector mounted and coupled in a custom hermetic surface mount leadless chip carrier (LCC) ceramic package that provides 1500 VDC electrical isolation between the input and output.
The light from the LED is collected by the photodiode in the integrated detector and amplified by a high gain linear amplifier that drives a Schottky-clamped open collector output transistor. Typical propagation delay for the OLS500 is 60 ns. The internal shield improves common mode transient immunity to 1000 V/μs minimum.
Device mounting is achieved with reflow soldering or conductive epoxies.

The OLS300 is suitable for interfacing Transistor-Transistor Logic (TTL) to Low Power Schottky Transistor-Transistor Logic (LSTTL), or Complementary Metal Oxide Semiconductor (CMOS), as well as wide bandwidth analog applications. Each OLS300 has an LED and integrated photodiode transistor detector mounted and coupled in a custom hermetic surface mount leadless chip carrier (LCC) ceramic package that provides 1500 VDC of electrical isolation between the input and output. The integrated photodiode transistor improves the switching speed by orders of magnitude as compared to standard phototransistors by reducing the base-to-collector capacitance.
The OLS300’s device mounting is achieved with reflow soldering or conductive epoxies.

The OLS700 linear optocoupler consists of one LED that is optically coupled to two matched photodiode detectors. Photodiode detectors are used for excellent linearity.
A fixed relationship is maintained between input and output due to:

• The photodiode on the input side acts as a feedback device that permits an external feedback loop to ensure constant LED light output.
• A similar matching photodiode on the output side is used to drive an output circuit that is electrically isolated from the input.

Each OLS700 is mounted and coupled in a custom hermetic surface mount leadless chip carrier (LCC) ceramic package that provides 1000 VDC electrical isolation between the input and output.
Device mounting is achieved with reflow soldering or conductive epoxies.

The OLS400 has a high current transfer ratio (CTR) at low input currents, making it ideal for applications such as Metal Oxide Semiconductor (MOS), Complementary MOS (CMOS), and low-power logic interfacing or RS232C data transmission systems. Each OLS400 has an LED and integrated photodiode Darlington detector I/C, mounted and coupled in a custom hermetic surface mount leadless chip carrier (LCC) package that provides 1500 VDC electrical isolation between the input and output. The Darlington detector has an integrated base-to-emitter resistor for superior high temperature performance. The split Darlington design permits lower output saturation voltage and higher switching speed operation than is possible with conventional photodarlington designs.
Device mounting is achieved with reflow soldering or conductive epoxies. The pads are gold plated and RoHS compliant.

The OLS910 consists of a pair of LEDs that are optically coupled to a dielectrically isolated photovoltaic diode array, packaged in a small hermetic leadless chip carrier (LCC). When the LED is energized, the infrared emission is detected by the photovoltaic array and a DC output voltage is generated. This electrically isolated voltage can be used to drive the gates of Metal Oxide Semiconductor (MOS) devices.
Device mounting is achieved with reflow soldering or conductive epoxies.

The OLS303 is suitable for wide bandwidth analog applications. Each OLS303 has an LED and integrated photodiode transistor detector mounted and coupled in a custom hermetic surface mount Leadless Chip Carrier (LCC) ceramic package, that provides 1500 VDC of electrical isolation between the input and output. The integrated photodiode transistor improves the bandwidth by orders of magnitude as compared to standard phototransistors. The internal shield provides excellent commonmode immunity performance.
Device mounting is achieved with reflow soldering or conductive epoxies.

The OLS600 has an LED and an integrated high-speed detector that are mounted and coupled in a 6-pin leadless chip carrier (LCC) package, which provides 1500 VDC electrical isolation between the input and output.
The light from the LED is collected by the photodiode in the integrated detector. The integrated detector incorporates a Schmitt trigger, which provides hysteresis for noise immunity and pulse shaping and an open collector output. Typical propagation delay of this product is 170 ns. The common mode rejection (CMR) transient immunity is greater than 1000 V/μs.
Device surface mounting is achieved with reflow soldering or conductive epoxies.

The OLS100 is designed especially for applications that require optical isolation with a high CTR and low saturation VCE. Each OLS100 device consists of an LED and N-P-N silicon phototransistor, mounted and coupled in a custom hermetic surface-mount Leadless Chip Carrier (LCC) package.
The low input current makes the OLS100 well-suited for direct Complementary Metal Oxide Semiconductor (CMOS) to Low Power Schottky Transistor (LSTTL) to Transistor Logic (TTL) interfaces.
The OLS100 device can be mounted using reflow soldering or conductive epoxies.

The OLH500 is suitable for high-speed digital interfacing applications, elimination of ground loops, and input/output buffering. Each OLH500 has an LED and integrated high-speed detector mounted and coupled in a TO-5 hermetic package, that provides 1000 VDC electrical isolation between the input and output. The light from the LED is collected by the photodiode in the integrated detector and amplified by a high gain linear amplifier that drives a Schottky-clamped open collector output transistor. Typical propagation delay for the OLH500 is 60 ns. The internal shield improves common mode transient immunity to 1000 V/μs minimum.

The OLH500 is suitable for high-speed digital interfacing applications, elimination of ground loops, and input/output buffering. Each OLH500 has an LED and integrated high-speed detector mounted and coupled in a TO-5 hermetic package, that provides 1000 VDC electrical isolation between the input and output. The light from the LED is collected by the photodiode in the integrated detector and amplified by a high gain linear amplifier that drives a Schottky-clamped open collector output transistor. Typical propagation delay for the OLH500 is 60 ns. The internal shield improves common mode transient immunity to 1000 V/μs minimum.

The OLF500 is suitable for high-speed digital interfacing applications, elimination of ground loops, and input/output buffering in a hermetic surface mount technology (SMT) package. Each OLF500 has an LED and integrated high-speed detector that is mounted and coupled in a custom 8-pin hermetic flat-pack package, providing 1000 VDC electrical isolation between the input and output. The light from the LED is collected by the photodiode in the integrated detector, and amplified by a high-gain linear amplifier that drives a Schottky-clamped open collector output transistor. The internal shield improves the common mode transient immunity to a minimum of 1000 V/μs.

The OLH 400 has high current transfer ratio at very low input currents making it ideal for applications such as Metal Oxide Semiconductor (MOS), Complementary MOS (CMOS), and low power logic interfacing or RS232C data transmission systems. Each OLH 400 has a light emitting diode and an integrated photodiode Darlington detector IC mounted and coupled in a custom hermetic TO-5 package providing 1000 Vdc electrical isolation between input and output. The Darlington detector has an integrated base to emitter resistor for superior high temperature performance. The split Darlington design permits lower output saturation voltage and higher switching speed operation than possible with conventional photodarlington design. The internal shield provides excellent common mode immunity performance.

The OLH300 is suitable for interfacing Transistor-Transistor Logic (TTL) to Low Power Schottky Transistor-Transistor Logic (LSTTL), TTL, or Complementary Metal Oxide Semiconductor (CMOS), as well as wide bandwidth analog applications.
Each OLH300 has an LED and an integrated photodiode transistor detector that is mounted and coupled in a ceramic substrate inside a hermetic TO-5 package that provides 1000 VDC of electrical isolation between the input and output. The integrated photodiode transistor improves the switching speed by orders of magnitude as compared to standard phototransistors by reducing the base-to-collector capacitance. The internal shield provides excellent common-mode immunity performance.

The OLF300 is suitable for interfacing Transistor-Transistor Logic (TTL) to Low Power Schottky Transistor-Transistor Logic (LSTTL), TTL, or Complementary Metal Oxide Semiconductor (CMOS), as well as wide bandwidth analog applications. Each OLF300 has a light emitting diode and an integrated photodiode transistor detector mounted and coupled in a custom 8-pin hermetic flat pack package providing 1000 Vdc electrical isolation between input and output. The integrated photodiode transistor improves switching speed by orders of magnitude as compared to standard photo transistors, by reducing the base to collector capacitance. The internal shield provides excellent common-mode immunity performance.

The OLH6000/6001 has an LED and integrated high-speed detector that are mounted and coupled in a hermetic 8-pin side brazed dual in-line package (DIP), which provides 1500 VDC electrical isolation between the input and output. The light from the LED is collected by the photodiode in the integrated detector. The integrated detector incorporates a Schmitt trigger, which provides hysteresis for noise immunity and pulse shaping and an open collector output. Typical propagation delay of this product is 170 ns. The common mode rejection (CMR) transient immunity is greater than 1000 V/μs at 300 VCM.
The OLH6001 is a 100 percent screened version of the OLH6000.

The OLI920 consists of a pair of LEDs that are optically coupled to a dielectrically isolated photovoltaic diode array, packaged on a thick film ceramic substrate. When the LED is energized, the infrared emission is detected by the photovoltaic array and a DC output voltage is generated. This electrically isolated voltage can be used to drive the gates of Metal Oxide Semiconductor (MOS) devices. Additional control circuitry provides fast turn-off, protection for false turn-on, and gate protection.
Surface mounting can be accomplished with conductive epoxies or reflow soldering.

Automotive Optocoupler Replacement Isolator

Automotive Optocoupler Replacement Isolator

Automotive Optocoupler Replacement Isolator

Automotive Optocoupler Replacement Isolator

Automotive Optocoupler Replacement Isolator

The OLF400 has high current transfer ratio at very low input currents making it ideal for applications such as Metal Oxide Semiconductor (MOS), Complementary MOS (CMOS), and low power logic interfacing or RS232C data transmission systems. Each OLF400 has a light emitting diode and an integrated photodiode Darlington detector IC mounted and coupled in a custom 8-pin hermetic flat pack package providing 1000 Vdc electrical isolation between input and output. The Darlington detector has an integrated base-emitter resistor for superior high temperature performance. The split Darlington design permits lower output saturation voltage and higher switching speed operation than possible with conventional photodarlington design. The internal shield provides excellent common mode immunity performance.

The OLI300 is suitable for interfacing Transistor-Transistor Logic (TTL) to Low Power Schottky Transistor-Transistor Logic (LSTTL), TTL, or Complementary Metal Oxide Semiconductor (CMOS), as well as wide bandwidth analog applications.
Each OLI300 has an LED and an integrated photodiode transistor detector mounted and coupled in a miniature custom ceramic package that provides 1500 VDC of electrical isolation between the input and output. The integrated photodiode transistor improves the switching speed by orders of magnitude as compared to standard phototransistors by reducing the base-to-collector capacitance.
Device mounting is achieved by a standard hybrid assembly with non-conductive epoxies. Gold or aluminum wire bonding can be used to make electrical connections for maximum placement flexibility.
Note: Certain cleaning processes may be harmful to this device. Contact us for more details.

The OLI600 has an LED and integrated high-speed detector that are mounted and coupled in a miniature custom ceramic package, which provides 1500 VDC electrical isolation between the input and output. The light from the LED is collected by the photodiode in the integrated detector. The integrated detector incorporates a Schmitt trigger, which provides hysteresis for noise immunity and pulse shaping and an open collector output. Typical propagation delay of this product is 170 ns. The common mode rejection (CMR) transient immunity is greater than 1000 V/μs at 300 VCM.
Device mounting is achieved by a standard hybrid assembly with non-conductive epoxies. Gold or aluminum wire bonding can be used to make electrical connections for maximum placement flexibility.
Note: Certain cleaning processes may be harmful to these devices. Contact us for more details.

The OLI400 has a high current transfer ratio (CTR) at low input currents, which makes it ideal for applications such as Metal Oxide Semiconductor (MOS), Complementary MOS (CMOS), and low power logic interface/RS-232C data transmission systems.
Each OLI400 has an LED and integrated photodiode Darlington detector IC mounted and coupled in a miniature custom ceramic package that provides 1500 VDC electrical isolation between the input and output. The Darlington detector has an integrated base-emitter resistor for superior high temperature performance. The split Darlington design permits lower output saturation voltage and higher switching speed operation than possible with conventional photodarlington designs.
Device mounting is achieved by a standard hybrid assembly with non-conductive epoxies. Gold or aluminum wire bonding can be used to make electrical connections for maximum placement flexibility.
Note: Certain cleaning processes may be harmful to this device. Contact us for more details.

The OLI100 is designed especially for hybrid applications that require optical isolation with a high current transfer ratio and low saturation VCE. The device consists of a light emitting diode, and an N-P-N silicon phototransistor mounted and coupled in a miniature custom ceramic package.
The very low input current makes the OLI100 well suited for direct CMOS to Low Power Schottky Transistor to Transistor Logic (LSTTL/TTL) interfaces.
The OLI100 is mounted by standard hybrid assembly with nonconductive epoxies. Gold or aluminum wire bonding can be used to make electrical connections for maximum placement flexibility.

The OLI910 consists of a pair of LEDs that are optically coupled to a dielectrically isolated photovoltaic diode array, packaged on a thick film ceramic substrate. When the LED is energized, the infrared emission is detected by the photovoltaic array and a DC output voltage is generated. This electrically isolated voltage can be used to drive the gates of Metal Oxide Semiconductor (MOS) devices.
Device mounting is achieved with non-conductive epoxies. Gold or aluminum wire bonding can be used to make electrical connections for maximum placement flexibility.
Note: Certain cleaning processes may be harmful to these devices. Contact us for more details.

The OLI303 is suitable for wide bandwidth analog applications. Each OLI303 has an LED and an integrated photodiode transistor detector mounted and coupled in a miniature custom ceramic package that provides 1500 VDC of electrical isolation between the input and output. The integrated photodiode transistor improves the bandwidth by orders of magnitude as compared to standard phototransistors. The internal shield provides excellent common mode immunity performance.
Device mounting is achieved by a standard hybrid assembly with non-conductive epoxies. Gold or aluminum wire bonding can be used to make electrical connections for maximum placement flexibility.
Note: Certain cleaning processes may be harmful to this device. Contact us for more details.

The OLI580 is an optocoupled non-inverting power Metal Oxide Semiconductor/Silicon Field-Effect Transistor (MOSFET) driver for the hybrid assembly of switching loads where electrical isolation is required.
Each unit consists of an LED that is optically coupled to a Bi-polar Complementary Metal Oxide Semiconductor (BiCMOS) driver integrated circuit, and packaged in a chip carrier for hybrid assembly that provides 1500 V of input/output insulation and over 10 kV/μs of CMR. The integrated driver and active pull-down circuit can drive high peak currents into a 1000 pF capacitive load (CLOAD) with fast output rise and fall times. Energizing the input LED produces a logic high output.
The UVLO circuitry in the output trips at 7.5 V, and forces the output to low. The UVLO circuit with hysteresis ensures proper operation during power-up, and prevents damage during brown-out conditions.
All terminals are fully protected against up to 4 kV of electrostatic discharge (ESD). Device mounting is achieved by a standard hybrid assembly with non-conductive epoxies. Gold or aluminum wire bonding can be used to make electrical connections for maximum placement flexibility.

The MCT4 and MCT4R products are designed especially for high-reliability applications that require optical isolation with high Current Transfer Ratio (CTR) and low saturation VCE. Each optocoupler consists of an LED and N-P-N silicon photo-transistor that is mounted and optically coupled in a four-leaded hermetic TO–18 package.

The OLS049 is specifically designed for high-reliability applications that require optical isolation in radiation environments such as gamma, neutron, and proton radiation with a high current transfer ratio (CTR) and low saturation VCE. Each optocoupler consists of an LED and N-P-N silicon phototransistor that is electrically isolated, but optically coupled inside a hermetic, 4-pin leadless chip carrier (LCC) package.
Electrical parameters are similar to the JEDEC registered 4N49U optocoupler, but with better CTR degradation characteristics due to radiation exposure. The OLS049 has 100 percent high reliability screened parts available.
The device mounting for the OLS049 is achieved with reflow soldering or conductive epoxies.

The OLS249 consists of an LED that is optically coupled to an N-P-N silicon phototransistor, which is mounted and coupled in a custom hermetic surface mount technology (SMT) leadless chip carrier (LCC) package.
The low input current makes the OLS249 well-suited for direct Complementary Metal Oxide Semiconductor (CMOS) to Low Power Schottky Transistor-Transistor Logic (LSTTL) / TTL interfaces.
Electrical parameters are similar to the JEDEC registered 4N49 optocoupler, but with better current transfer ratio (CTR) degradation characteristics due to radiation exposure. Special electrical parametric selections are available upon request.

The 4N47/48/49 is designed especially for hirel applications requiring optical isolation with high current transfer ratio and low saturation Vce. Each optocoupler consists of a light emmiting diode and a NPN silicon phototransistor mounted and coupled in a miniature custom ceramic substrate inside a hermeticTO-5 package. The low input current makes the 4N4X well suited for direct CMOS to LSTTL/TTL interfaces. All electrical parameters are identical to the JEDEC registered 4N47, 4N48, 4N49.

100% hi-rel screenings are available.

The OLH1047/48/49 are designed especially for high-reliability applications that require optical isolation with high CTR and low saturation VCE. Each optocoupler consists of an LED and N-P-N silicon phototransistor, mounted and coupled in an 8-pin hermetically sealed DIP package. The low input current makes the OLH1047/48/49 compatible for direct CMOS to Low-Power Schottky Transistor-Transistor Logic (LSTTL)/ Transistor-to- Transistor Logic (TTL) interfaces.
All electrical parameters are identical to the JEDEC registered 4N47/48/49. The OLH1047/48/49 have 100 percent highreliability screenings available.

The OLH2047, OLH2048, and OLH2049 are dual-channel, hermetic 8-pin DIP optocouplers designed especially for highreliability applications that require optical isolation with high CTR and low saturation VCE.
Each optocoupler channel consists of an LED and N-P-N silicon photo-transistor mounted and coupled in an 8-pin hermetically sealed DIP package. The pinout configuration is similar to MCT6 and ILD1/2/5 plastic optocouplers.
High-reliability screening and special CTR selections are available (contact Isolink for more information).

The OLF100 consists of a LED that is optically coupled to an N-P-N silicon phototransistor mounted in an 8-pin hermetic surface mount flat-pack package. The leads can be formed to provide compliant solder connections to the mounting substrate. Special electrical parametric selections are available on request.

The OLS010 is specifically designed for high reliability applications that require optical isolation with a high CTR and low saturation VCE. Each optocoupler consists of an LED and N-P-N silicon phototransistor that is electrically isolated, but optically coupled inside a hermetic, four-pin Leadless Chip Carrier (LCC) package.
Electrical parameters are similar to the JEDEC registered 4N49U optocoupler. The OLS010 has 100 percent high reliability screened parts available.
The device mounting for the OLS010 is achieved with reflow soldering or conductive epoxies.

The OLI110 consists of an LED and N-P-N silicon phototransistor that is electrically isolated, but optically coupled on a ceramic leadless chip carrier (LCC) surface mount package. The epoxy coating on the OLI110 allows the device to withstand normal solvent cleaning operations.
Surface mounting can be accomplished with either conductive epoxies or by reflow soldering.
Special electrical parametric selections are available upon request.