Infineon's CoolSiC™ Schottky diodes 600V G3 feature the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The generation 3 is based on the same technology platform as generation 2 with the introduction, at package level, of the so called diffusion soldering.

Summary of Features

• Benchmark switching behavior
• No reverse recovery charge
• Temperature independent switching behavior
• High operating temperature (T _j max 175°C)

Benefits

• System efficiency improvement compared to Si
  diodes
• Reduced cooling requirements
• Enabling higher frequency/increased power
  density
• Higher system reliability due to lower operating
  temperature
• Reduced EMI

Potential Applications

• Server
• Telecom
• Solar
• Lighting
• PC power
• AC-DC

Infineon's CoolSiC™ Schottky diodes 600V G3 feature the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The generation 3 is based on the same technology platform as generation 2 with the introduction, at package level, of the so called diffusion soldering.

Summary of Features

• Benchmark switching behavior
• No reverse recovery charge
• Temperature independent switching behavior
• High operating temperature (T _j max 175°C)

Benefits

• System efficiency improvement compared to Si
  diodes
• Reduced cooling requirements
• Enabling higher frequency/increased power
  density
• Higher system reliability due to lower operating
  temperature
• Reduced EMI

Potential Applications

• Server
• Telecom
• Solar
• Lighting
• PC power
• AC-DC

Infineon's CoolSiC™ Schottky diodes 600V G3 feature the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The generation 3 is based on the same technology platform as generation 2 with the introduction, at package level, of the so called diffusion soldering.

Summary of Features

• Benchmark switching behavior
• No reverse recovery charge
• Temperature independent switching behavior
• High operating temperature (T _j max 175°C)

Benefits

• System efficiency improvement compared to Si
  diodes
• Reduced cooling requirements
• Enabling higher frequency/increased power
  density
• Higher system reliability due to lower operating
  temperature
• Reduced EMI

Potential Applications

• Server
• Telecom
• Solar
• Lighting
• PC power
• AC-DC

Infineon's CoolSiC™ Schottky diodes 600V G3 feature the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The generation 3 is based on the same technology platform as generation 2 with the introduction, at package level, of the so called diffusion soldering.

Summary of Features

• Benchmark switching behavior
• No reverse recovery charge
• Temperature independent switching behavior
• High operating temperature (T _j max 175°C)

Benefits

• System efficiency improvement compared to Si
  diodes
• Reduced cooling requirements
• Enabling higher frequency/increased power
  density
• Higher system reliability due to lower operating
  temperature
• Reduced EMI

Potential Applications

• Server
• Telecom
• Solar
• Lighting
• PC power
• AC-DC

CoolSiC™ Schottky diode 650 V G5 in TO-220 real2pin

The CoolSiC™ Schottky diode 650 V, 4 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q _c x V _f).

Summary of Features

• Improved figure of merit (Q _c x V _f)
• No reverse recovery charge
• Soft switching reverse recovery waveform
• Temperature independent switching behavior
• High operating temperature (T _j max 175°C)
• Improved surge capability
• Pb-free lead plating

Benefits

• Higher safety margin against overvoltage and complements CoolMOS™ offer
• Improved efficiency over all load conditions
• Increased efficiency compared to Silicon Diode alternatives
• Reduced EMI compared to snappier Silicon diode reverse recovery waveform
• Highly stable switching performance
• Reduced cooling requirements
• Reduced risks of thermal runaway
• RoHS compliant
• Very high quality and high volume manufacturing capability

Potential Applications

• Solar
• UPS
• Motor control and drives

Applications

• 48 V intermediate bus converter (IBC)
• Solutions for inductive wireless charging above 50 W

Designers who used this product also designed with

• ICE3AR4780JZ |
  CoolSET™ Fixed Frequency
• IPW60R040CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC010N04LS |
  N-Channel Power MOSFET
• ICE2QR2280G-1 |
  CoolSET™ Quasi Resonant
• IPW60R180C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IRLML0100TRPBF-1 |
  N-Channel Power MOSFET
• ICE2PCS01G |
  PFC-CCM (continuous conduction mode) ICs
• SN7002W |
  Small signal/small power MOSFET
• BSC057N08NS3 G |
  N-Channel Power MOSFET
• ICE3AR4780JZ |
  CoolSET™ Fixed Frequency
• IPW60R040CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC010N04LS |
  N-Channel Power MOSFET
• ICE2QR2280G-1 |
  CoolSET™ Quasi Resonant
• IPW60R180C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IRLML0100TRPBF-1 |
  N-Channel Power MOSFET
• ICE2PCS01G |
  PFC-CCM (continuous conduction mode) ICs
• SN7002W |
  Small signal/small power MOSFET

1
2
3

1200 V Silicion Carbide Schottky diode in a DPAK real2pin package

The CoolSiC™ Schottky diode generation 5 1200 V, 2 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.

Summary of Features

• Best-in-class forward voltage (V_F)
• No reverse recovery charge
• Mild positive temperature dependency of V_F
• Best-in-class surge current capability
• Excellent thermal performance

Benefits

• Highest system efficiency
• Improved system efficiency at low switching frequencies
• Increased power density at high switching frequencies
• Higher system reliability
• Reduced EMI

Applications

• General purpose motor drive - variating frequency and voltage
• Motor Control
• Photovoltaic
• Uninterruptible power supplies (UPS)

Designers who used this product also designed with

• IMBG120R040M2H |
  Silicon Carbide MOSFET Discretes
• FF450R12KE4 |
  IGBT modules
• IPB60R180C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• FF200R12KE4 |
  IGBT modules
• BSZ099N06LS5 |
  N-Channel Power MOSFET
• IMBG120R234M2H |
  Silicon Carbide MOSFET Discretes
• IRLML9301 |
  P-Channel Power MOSFET
• IMBG120R040M2H |
  Silicon Carbide MOSFET Discretes
• FF450R12KE4 |
  IGBT modules
• IPB60R180C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• FF200R12KE4 |
  IGBT modules
• BSZ099N06LS5 |
  N-Channel Power MOSFET
• IMBG120R234M2H |
  Silicon Carbide MOSFET Discretes
• IRLML9301 |
  P-Channel Power MOSFET
• IMBG120R040M2H |
  Silicon Carbide MOSFET Discretes

1
2

CoolSiC™ generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Q _c x V _f).
The CoolSiC™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.

Summary of Features

• V _br at 650V
• Improved figure of merit (Q _c x V _f)
• No reverse recovery charge
• Soft switching reverse recovery waveform
• Temperature independent switching behavior
• High operating temperature (T _j max 175°C)
• Improved surge capability
• Pb-free lead plating

Benefits

• Higher safety margin against overvoltage and complements CoolMOS™ offer
• Improved efficiency over all load conditions
• Increased efficiency compared to Silicon Diode alternatives
• Reduced EMI compared to snappier Silicon diode reverse recovery waveform
• Highly stable switching performance
• Reduced cooling requirements
• Reduced risks of thermal runaway
• RoHS compliant
• Very high quality and high volume manufacturing capability

Potential Applications

• Solar
• Uninterruptible power supply (UPS)
• Motor control and drives

Applications

• Home appliances
• Washing and drying

Designers who used this product also designed with

• IPW60R037CM8 |
  600 V CoolMOS™ 8
• IKCM15L60GD |
  Intelligent Power Modules (IPM)
• IKCM10H60GA |
  Intelligent Power Modules (IPM)
• CY8C4146AZI-S423T |
  PSOC™ 4 Arm® Cortex®-M0/M0+
• 1EDN8550B |
  Gate driver ICs
• ICE3PCS01G |
  PFC-CCM (continuous conduction mode) ICs
• IPW60R037CM8 |
  600 V CoolMOS™ 8
• IKCM15L60GD |
  Intelligent Power Modules (IPM)
• IKCM10H60GA |
  Intelligent Power Modules (IPM)
• CY8C4146AZI-S423T |
  PSOC™ 4 Arm® Cortex®-M0/M0+
• 1EDN8550B |
  Gate driver ICs
• ICE3PCS01G |
  PFC-CCM (continuous conduction mode) ICs
• IPW60R037CM8 |
  600 V CoolMOS™ 8
• IKCM15L60GD |
  Intelligent Power Modules (IPM)

1
2

Infineon's CoolSiC™ Schottky diodes 600V G3 feature the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The generation 3 is based on the same technology platform as generation 2 with the introduction, at package level, of the so called diffusion soldering.

Summary of Features

• Benchmark switching behavior
• No reverse recovery charge
• Temperature independent switching behavior
• High operating temperature (T _j max 175°C)

Benefits

• System efficiency improvement compared to Si
  diodes
• Reduced cooling requirements
• Enabling higher frequency/increased power
  density
• Higher system reliability due to lower operating
  temperature
• Reduced EMI

Potential Applications

• Server
• Telecom
• Solar
• Lighting
• PC power
• AC-DC

Applications

• Telecommunication infrastructure

Infineon's CoolSiC™ Schottky diodes 600V G3 feature the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The generation 3 is based on the same technology platform as generation 2 with the introduction, at package level, of the so called diffusion soldering.

Summary of Features

• Benchmark switching behavior
• No reverse recovery charge
• Temperature independent switching behavior
• High operating temperature (T _j max 175°C)

Benefits

• System efficiency improvement compared to Si
  diodes
• Reduced cooling requirements
• Enabling higher frequency/increased power
  density
• Higher system reliability due to lower operating
  temperature
• Reduced EMI

Potential Applications

• Server
• Telecom
• Solar
• Lighting
• PC power
• AC-DC

CoolSiC™ Schottky diode 650 V G5 in D2PAK real2pin

The CoolSiC™ Schottky diode 650 V, 12 A generation 5 in D2PAK real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q _c x V _f).

Summary of Features

• Improved figure of merit (Q _c x V _f)
• No reverse recovery charge
• Soft switching reverse recovery waveform
• Temperature independent switching behavior
• High operating temperature (T _j max 175°C)
• Improved surge capability
• Pb-free lead plating

Benefits

• Higher safety margin against overvoltage and complements CoolMOS™ offer
• Improved efficiency over all load conditions
• Increased efficiency compared to Silicon Diode alternatives
• Reduced EMI compared to snappier Silicon diode reverse recovery waveform
• Highly stable switching performance
• Reduced cooling requirements
• Reduced risks of thermal runaway
• RoHS compliant
• Very high quality and high volume manufacturing capability

Potential Applications

• Solar
• UPS
• Motor control and drives

Applications

• 1-phase string inverter solutions
• DIN rail power supplies

Designers who used this product also designed with

• IDK16G120C5 |
  CoolSiC™ Schottky Diodes
• IMBG120R078M2H |
  Silicon Carbide MOSFET Discretes
• IKB20N65EH5 |
  IGBT discretes
• IKB40N65EH5 |
  IGBT discretes
• IGB20N65S5 |
  IGBT discretes
• IGB50N65H5 |
  IGBT discretes
• IDK16G120C5 |
  CoolSiC™ Schottky Diodes
• IMBG120R078M2H |
  Silicon Carbide MOSFET Discretes
• IKB20N65EH5 |
  IGBT discretes
• IKB40N65EH5 |
  IGBT discretes
• IGB20N65S5 |
  IGBT discretes
• IGB50N65H5 |
  IGBT discretes
• IDK16G120C5 |
  CoolSiC™ Schottky Diodes
• IMBG120R078M2H |
  Silicon Carbide MOSFET Discretes

1
2

CoolSiC™ Schottky diode 650 V G5 in D2PAK real2pin

The CoolSiC™ Schottky diode 650 V, 6 A generation 5 in D2PAK real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q _c x V _f).

Summary of Features

• Improved figure of merit (Q _c x V _f)
• No reverse recovery charge
• Soft switching reverse recovery waveform
• Temperature independent switching behavior
• High operating temperature (T _j max 175°C)
• Improved surge capability
• Pb-free lead plating

Benefits

• Higher safety margin against overvoltage and complements CoolMOS™ offer
• Improved efficiency over all load conditions
• Increased efficiency compared to Silicon Diode alternatives
• Reduced EMI compared to snappier Silicon diode reverse recovery waveform
• Highly stable switching performance
• Reduced cooling requirements
• Reduced risks of thermal runaway
• RoHS compliant
• Very high quality and high volume manufacturing capability

Potential Applications

• Solar
• UPS
• Motor control and drives

Applications

• 1-phase string inverter solutions
• 48 V intermediate bus converter (IBC)

Designers who used this product also designed with

• IPB60R099P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• ICE2PCS01G |
  PFC-CCM (continuous conduction mode) ICs
• IPD60R180CM8 |
  600 V CoolMOS™ 8
• ICE2QR2280G |
  CoolSET™ Quasi Resonant
• IPD200N15N3 G
  N-Channel Power MOSFET
• IPB60R099P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• ICE2PCS01G |
  PFC-CCM (continuous conduction mode) ICs
• IPD60R180CM8 |
  600 V CoolMOS™ 8
• ICE2QR2280G |
  CoolSET™ Quasi Resonant
• IPD200N15N3 G
  N-Channel Power MOSFET
• IPB60R099P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• ICE2PCS01G |
  PFC-CCM (continuous conduction mode) ICs
• IPD60R180CM8 |
  600 V CoolMOS™ 8

1
2

Infineon's CoolSiC™ Schottky diodes 600V G3 feature the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The generation 3 is based on the same technology platform as generation 2 with the introduction, at package level, of the so called diffusion soldering.

Summary of Features

• Benchmark switching behavior
• No reverse recovery charge
• Temperature independent switching behavior
• High operating temperature (T _j max 175°C)

Benefits

• System efficiency improvement compared to Si
  diodes
• Reduced cooling requirements
• Enabling higher frequency/increased power
  density
• Higher system reliability due to lower operating
  temperature
• Reduced EMI

Potential Applications

• Server
• Telecom
• Solar
• Lighting
• PC power
• AC-DC

Applications

• DIN rail power supplies
• Uninterruptible power supplies (UPS)

Designers who used this product also designed with

• BSZ340N08NS3 G |
  N-Channel Power MOSFET
• IDH05G120C5 |
  CoolSiC™ Schottky Diodes
• IRS27952 |
  Half-bridge and LLC controller
• IR1168SPBF |
  Synchronous Rectification ICs
• IKZA50N65SS5 |
  IGBT discretes
• IPZA60R016CM8 |
  600 V CoolMOS™ 8
• IMBG120R234M2H |
  Silicon Carbide MOSFET Discretes
• IDW40G120C5B |
  CoolSiC™ Schottky Diodes
• IMZ120R030M1H |
  Silicon Carbide MOSFET Discretes
• S25FL128SDPMFV000 |
  Quad SPI Flash
• BSZ340N08NS3 G |
  N-Channel Power MOSFET
• IDH05G120C5 |
  CoolSiC™ Schottky Diodes
• IRS27952 |
  Half-bridge and LLC controller
• IR1168SPBF |
  Synchronous Rectification ICs
• IKZA50N65SS5 |
  IGBT discretes
• IPZA60R016CM8 |
  600 V CoolMOS™ 8
• IMBG120R234M2H |
  Silicon Carbide MOSFET Discretes
• IDW40G120C5B |
  CoolSiC™ Schottky Diodes

1
2
3

CoolSiC™ Schottky diode 650 V G5 in TO-220 real2pin

The CoolSiC™ Schottky diode 650 V, 10 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q _c x V _f).

Summary of Features

• Improved figure of merit (Q _c x V _f)
• No reverse recovery charge
• Soft switching reverse recovery waveform
• Temperature independent switching behavior
• High operating temperature (T _j max 175°C)
• Improved surge capability
• Pb-free lead plating

Benefits

• Higher safety margin against overvoltage and complements CoolMOS™ offer
• Improved efficiency over all load conditions
• Increased efficiency compared to Silicon Diode alternatives
• Reduced EMI compared to snappier Silicon diode reverse recovery waveform
• Highly stable switching performance
• Reduced cooling requirements
• Reduced risks of thermal runaway
• RoHS compliant
• Very high quality and high volume manufacturing capability

Potential Applications

• Solar
• UPS
• Motor control and drives

Applications

• 48 V intermediate bus converter (IBC)
• Edge computing
• EV charging
• General purpose motor drive - variating frequency and voltage

Designers who used this product also designed with

• IPP60R170CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPP037N08N3 G |
  N-Channel Power MOSFET
• IPA80R280P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPP034N08N5 |
  N-Channel Power MOSFET
• IPW60R070P6 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• 2EDF7275F |
  Gate driver ICs
• ICE2QR0680Z |
  CoolSET™ Quasi Resonant
• IPP200N15N3 G |
  N-Channel Power MOSFET
• IPP60R022S7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPW65R095C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPL60R104C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPW60R024CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IR2010S |
  Gate driver ICs
• IPP60R040C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPP65R110CFD |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPW65R080CFD |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• ISC022N10NM6 |
  N-Channel Power MOSFET
• BSP125 |
  Small signal/small power MOSFET
• IR2117 |
  Gate driver ICs
• BSC146N10LS5 |
  N-Channel Power MOSFET
• IPP60R170CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPP037N08N3 G |
  N-Channel Power MOSFET
• IPA80R280P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPP034N08N5 |
  N-Channel Power MOSFET
• IPW60R070P6 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• 2EDF7275F |
  Gate driver ICs
• ICE2QR0680Z |
  CoolSET™ Quasi Resonant
• IPP200N15N3 G |
  N-Channel Power MOSFET

1
2
3
4
5

CoolSiC™ Schottky diode 650 V G5 in D2PAK real2pin

The CoolSiC™ Schottky diode 650 V, 8 A generation 5 in D2PAK real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q _c x V _f).

Summary of Features

• Improved figure of merit (Q _c x V _f)
• No reverse recovery charge
• Soft switching reverse recovery waveform
• Temperature independent switching behavior
• High operating temperature (T _j max 175°C)
• Improved surge capability
• Pb-free lead plating

Benefits

• Higher safety margin against overvoltage and complements CoolMOS™ offer
• Improved efficiency over all load conditions
• Increased efficiency compared to Silicon Diode alternatives
• Reduced EMI compared to snappier Silicon diode reverse recovery waveform
• Highly stable switching performance
• Reduced cooling requirements
• Reduced risks of thermal runaway
• RoHS compliant
• Very high quality and high volume manufacturing capability

Potential Applications

• Solar
• UPS
• Motor control and drives

Applications

• 48 V intermediate bus converter (IBC)
• Automotive instrument cluster
• DIN rail power supplies

Designers who used this product also designed with

• ISP14EP15LM |
  P-Channel Power MOSFET
• IDK05G120C5 |
  CoolSiC™ Schottky Diodes
• IPB65R110CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IQDH45N04LM6CG |
  N-Channel Power MOSFET
• IPL60R065C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPN80R1K4P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IQD009N06NM5CG |
  N-Channel Power MOSFET
• BSZ068N06NS |
  N-Channel Power MOSFET
• IQE006NE2LM5CG |
  N-Channel Power MOSFET
• IPT60R050G7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• ISP14EP15LM |
  P-Channel Power MOSFET
• IDK05G120C5 |
  CoolSiC™ Schottky Diodes
• IPB65R110CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IQDH45N04LM6CG |
  N-Channel Power MOSFET
• IPL60R065C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPN80R1K4P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IQD009N06NM5CG |
  N-Channel Power MOSFET
• BSZ068N06NS |
  N-Channel Power MOSFET

1
2
3

Unparalleled efficiency and price performance

The CoolSiC™ Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q _c x V _F).

Summary of Features

• The lowest V _F: 1.25V
• Best-in-class figure of merit (Q _c x V _F)
• No reverse recovery charge
• Temperature independent switching behavior
• High dv/dt ruggedness
• Optimized thermal behavior

Benefits

• Improved system efficiency over all load conditions
• Increased system power density
• Reduced cooling requirements and increased system reliability
• Enables extremely fast switching
• Easy and effective match with CoolMOS™ 7 families
• Optimal price performance

Potential Applications

• Server
• Telecom
• PC power
• Solar
• Lighting

Applications

• 48 V intermediate bus converter (IBC)
• DIN rail power supplies
• Energy Storage Systems
• EV charging
• Light electric vehicles (LEV)

Designers who used this product also designed with

• IPW60R180C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC020N03LS G |
  N-Channel Power MOSFET
• IPT60R080G7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPP60R120P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• ICE5QR1680AG |
  CoolSET™ Quasi Resonant
• IPL60R185C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPP60R060P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC010N04LS |
  N-Channel Power MOSFET
• 1EDN7511B |
  Gate driver ICs
• IPT60R040S7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• XMC1402-Q040X0064 AA |
  32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0
• IPP60R080P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IDWD40G120C5 |
  CoolSiC™ Schottky Diodes
• BSC009NE2LS5 |
  N-Channel Power MOSFET
• IMBG65R048M1H |
  Silicon Carbide MOSFET Discretes
• BSC600N25NS3 G |
  N-Channel Power MOSFET
• IPW60R060P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IAUZ40N10S5N130 |
  Automotive MOSFET
• IRS21531DS |
  Gate driver ICs
• ICE2QR0665G |
  CoolSET™ Quasi Resonant
• IPW60R180C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC020N03LS G |
  N-Channel Power MOSFET
• IPT60R080G7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPP60R120P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• ICE5QR1680AG |
  CoolSET™ Quasi Resonant
• IPL60R185C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPP60R060P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC010N04LS |
  N-Channel Power MOSFET

1
2
3
4
5

CoolSiC™ Schottky diode 1200 V, 20 A generation 5 in a TO-220 real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.

Summary of Features

• Best-in-class forward voltage (V_F)
• No reverse recovery charge
• Mild positive temperature dependency of V_F
• Best-in-class surge current capability
• Excellent thermal performance

Benefits

• Highest system efficiency
• Improved system efficiency at low switching frequencies
• Increased power density at high switching frequencies
• Higher system reliability
• Reduced EMI

Applications

• 48 V to 12 V DC-DC converter
• Motor Control
• Photovoltaic
• Uninterruptible power supplies (UPS)
• Wired Communication

Designers who used this product also designed with

• IRF150P221 |
  N-Channel Power MOSFET
• IMZA65R027M1H |
  Silicon Carbide MOSFET Discretes
• IMZ120R060M1H |
  Silicon Carbide MOSFET Discretes
• IRF150P221 |
  N-Channel Power MOSFET
• IMZA65R027M1H |
  Silicon Carbide MOSFET Discretes
• IMZ120R060M1H |
  Silicon Carbide MOSFET Discretes
• IRF150P221 |
  N-Channel Power MOSFET
• IMZA65R027M1H |
  Silicon Carbide MOSFET Discretes
• IMZ120R060M1H |
  Silicon Carbide MOSFET Discretes

1200 V Silicion Carbide Schottky diode in TO-247-3 package

The CoolSiC™ Schottky diode generation 5 1200 V, 10 A in a TO-247-3 package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.

Summary of Features

• Best-in-class forward voltage (V_F)
• No reverse recovery charge
• Mild positive temperature dependency of V_F
• Best-in-class surge current capability
• Excellent thermal performance

Benefits

• Highest system efficiency
• Improved system efficiency at low switching frequencies
• Increased power density at high switching frequencies
• Higher system reliability
• Reduced EMI

Applications

• 1-phase string inverter solutions
• General purpose motor drive - variating frequency and voltage
• Motor Control
• Photovoltaic
• Uninterruptible power supplies (UPS)

Designers who used this product also designed with

• IKW40N65ES5 |
  IGBT discretes
• IKQ40N120CH3 |
  IGBT discretes
• IKW40N120H3 |
  IGBT discretes
• IKW40N65ES5 |
  IGBT discretes
• IKQ40N120CH3 |
  IGBT discretes
• IKW40N120H3 |
  IGBT discretes
• IKW40N65ES5 |
  IGBT discretes
• IKQ40N120CH3 |
  IGBT discretes
• IKW40N120H3 |
  IGBT discretes

1200 V Silicion Carbide Schottky diode in TO-247-3 package

The CoolSiC™ Schottky diode generation 5 1200 V, 30 A in a TO-247-3 package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.

Summary of Features

• Best-in-class forward voltage (V_F)
• No reverse recovery charge
• Mild positive temperature dependency of V_F
• Best-in-class surge current capability
• Excellent thermal performance

Benefits

• Highest system efficiency
• Improved system efficiency at low switching frequencies
• Increased power density at high switching frequencies
• Higher system reliability
• Reduced EMI

Applications

• 1-phase string inverter solutions
• Energy Storage Systems
• General purpose motor drive - variating frequency and voltage
• Hydrogen electrolysis
• Smart buildings

Designers who used this product also designed with

• IMW120R020M1H |
  Silicon Carbide MOSFET Discretes
• IKQ75N120CS6 |
  IGBT discretes
• IKW50N65ET7 |
  IGBT discretes
• TLI4971-A050T5-U-E0001 |
  Current sensors
• IMZ120R030M1H |
  Silicon Carbide MOSFET Discretes
• IPW65R041CFD |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IMZA65R027M1H |
  Silicon Carbide MOSFET Discretes
• BTS4142N |
  Classic PROFET™ 24V | automotive smart high-side switch
• S29GL064S80TFV020 |
  High-performance page mode
• IDW40G65C5 |
  CoolSiC™ Schottky Diodes
• IRLML6246 |
  N-Channel Power MOSFET
• IKW40N65ES5 |
  IGBT discretes
• IKW40N120H3 |
  IGBT discretes
• S29GL064S70TFA030 |
  High-performance page mode
• IMW120R020M1H |
  Silicon Carbide MOSFET Discretes
• IKQ75N120CS6 |
  IGBT discretes
• IKW50N65ET7 |
  IGBT discretes
• TLI4971-A050T5-U-E0001 |
  Current sensors
• IMZ120R030M1H |
  Silicon Carbide MOSFET Discretes
• IPW65R041CFD |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IMZA65R027M1H |
  Silicon Carbide MOSFET Discretes
• BTS4142N |
  Classic PROFET™ 24V | automotive smart high-side switch

1
2
3
4

The 5th Generation CoolSiC™ Automotive Schottky Diode and represents Infineon leading edge technology for Silicon Carbide Schottky Barrier diodes

Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load conditions resulting from both its thermalcharacteristics and low figure of merit (Qc x Vf). This product family has been designed to complement Infineon’s IGBT and CoolMOS™ portfolio. This ensures meeting the most stringent application requirements inthe 650V voltage class.

Summary of Features

• Revolutionary semiconductor material - Silicon Carbide
• Benchmark switching behavior
• No reverse recovery/ No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Junction Temperature range from -40°C to 175°C
• System efficiency improvement over Si diodes
• System cost / size savings due to reduced cooling requirements
• Enabling higher frequency / increased power density solutions
• Higher system reliability due to lower operating temperatures
• Reduced EMI

Potential Applications

• Traction inverter
• Booster / DCDC Converter
• On board Charger / PFC

Designers who used this product also designed with

• IAUC41N06S5L100 |
  Automotive MOSFET
• BSL215C |
  Dual MOSFET
• AIMDQ75R040M1H |
  Silicon Carbide MOSFET Discretes
• AIMCQ120R060M1T
  Silicon Carbide MOSFET Discretes
• IPBE65R115CFD7A |
  Automotive MOSFET
• BSS159N |
  N-Channel Depletion Mode MOSFET
• TLE9471-3ES V33 |
  OPTIREG™ Lite SBC
• AIGBE40N65F5 |
  Automotive IGBT discretes
• BAS52-02V |
  Schottky Diodes
• BSS84P |
  Small signal/small power MOSFET
• IAUT300N08S5N011 |
  Automotive MOSFET
• AIMCQ120R080M1T |
  Silicon Carbide MOSFET Discretes
• SAK-TC365DP-64F300W AA |
  AURIX™ Family – TC36xDP
• IAUC41N06S5L100 |
  Automotive MOSFET
• BSL215C |
  Dual MOSFET
• AIMDQ75R040M1H |
  Silicon Carbide MOSFET Discretes
• AIMCQ120R060M1T
  Silicon Carbide MOSFET Discretes
• IPBE65R115CFD7A |
  Automotive MOSFET
• BSS159N |
  N-Channel Depletion Mode MOSFET
• TLE9471-3ES V33 |
  OPTIREG™ Lite SBC
• AIGBE40N65F5 |
  Automotive IGBT discretes

1
2
3
4

Applications

• Electric vehicle (EV) drivetrain system
• On-board charging (OBC) for electric vehicles

The 5th Generation CoolSiC™ Automotive Schottky Diode and represents Infineon leading edge technology for Silicon Carbide Schottky Barrier diodes

Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load conditions resulting from both its thermalcharacteristics and low figure of merit (Qc x Vf). This product family has been designed to complement Infineon’s IGBT and CoolMOS™ portfolio. This ensures meeting the most stringent application requirements inthe 650V voltage class.

Summary of Features

• Revolutionary semiconductor material - Silicon Carbide
• Benchmark switching behavior
• No reverse recovery/ No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Junction Temperature range from -40°C to 175°C
• System efficiency improvement over Si diodes
• System cost / size savings due to reduced cooling requirements
• Enabling higher frequency / increased power density solutions
• Higher system reliability due to lower operating temperatures
• Reduced EMI

Potential Applications

• Traction inverter
• Booster / DCDC Converter
• On board Charger / PFC

Applications

• Light electric vehicles (LEV)
• On-board charging (OBC) for electric vehicles

The 5th Generation CoolSiC™ Automotive Schottky Diode and represents Infineon leading edge technology for Silicon Carbide Schottky Barrier diodes

Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load conditions resulting from both its thermalcharacteristics and low figure of merit (Qc x Vf). This product family has been designed to complement Infineon’s IGBT and CoolMOS™ portfolio. This ensures meeting the most stringent application requirements inthe 650V voltage class.

Summary of Features

• Revolutionary semiconductor material - Silicon Carbide
• Benchmark switching behavior
• No reverse recovery/ No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Junction Temperature range from -40°C to 175°C
• System efficiency improvement over Si diodes
• System cost / size savings due to reduced cooling requirements
• Enabling higher frequency / increased power density solutions
• Higher system reliability due to lower operating temperatures
• Reduced EMI

Potential Applications

• Traction inverter
• Booster / DCDC Converter
• On board Charger / PFC

Applications

• On-board charging (OBC) for electric vehicles

Designers who used this product also designed with

• BSL215C |
  Dual MOSFET
• AIGBE40N65F5 |
  Automotive IGBT discretes
• AIMDQ75R040M1H |
  Silicon Carbide MOSFET Discretes
• AIMCQ120R060M1T
  Silicon Carbide MOSFET Discretes
• BAS52-02V |
  Schottky Diodes
• IPBE65R115CFD7A |
  Automotive MOSFET
• BSS159N |
  N-Channel Depletion Mode MOSFET
• TLE9471-3ES V33 |
  OPTIREG™ Lite SBC
• BSS84P |
  Small signal/small power MOSFET
• IAUT300N08S5N011 |
  Automotive MOSFET
• AIMCQ120R080M1T |
  Silicon Carbide MOSFET Discretes
• SAK-TC365DP-64F300W AA |
  AURIX™ Family – TC36xDP
• IAUC41N06S5L100 |
  Automotive MOSFET
• BSL215C |
  Dual MOSFET
• AIGBE40N65F5 |
  Automotive IGBT discretes
• AIMDQ75R040M1H |
  Silicon Carbide MOSFET Discretes
• AIMCQ120R060M1T
  Silicon Carbide MOSFET Discretes
• BAS52-02V |
  Schottky Diodes
• IPBE65R115CFD7A |
  Automotive MOSFET
• BSS159N |
  N-Channel Depletion Mode MOSFET
• TLE9471-3ES V33 |
  OPTIREG™ Lite SBC

1
2
3
4

The 5th Generation CoolSiC™ Automotive Schottky Diode and represents Infineon leading edge technology for Silicon Carbide Schottky Barrier diodes

Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load conditions resulting from both its thermalcharacteristics and low figure of merit (Qc x Vf). This product family has been designed to complement Infineon’s IGBT and CoolMOS™ portfolio. This ensures meeting the most stringent application requirements inthe 650V voltage class.

Summary of Features

• Revolutionary semiconductor material - Silicon Carbide
• Benchmark switching behavior
• No reverse recovery/ No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Junction Temperature range from -40°C to 175°C
• System efficiency improvement over Si diodes
• System cost / size savings due to reduced cooling requirements
• Enabling higher frequency / increased power density solutions
• Higher system reliability due to lower operating temperatures
• Reduced EMI

Potential Applications

• Traction inverter
• Booster / DCDC Converter
• On board Charger / PFC

Applications

• High-voltage DC-DC converter for electric vehicles

Infineon's CoolSiC™ Schottky diodes 600V G3 feature the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The generation 3 is based on the same technology platform as generation 2 with the introduction, at package level, of the so called diffusion soldering.

Summary of Features

• Benchmark switching behavior
• No reverse recovery charge
• Temperature independent switching behavior
• High operating temperature (T _j max 175°C)

Benefits

• System efficiency improvement compared to Si
  diodes
• Reduced cooling requirements
• Enabling higher frequency/increased power
  density
• Higher system reliability due to lower operating
  temperature
• Reduced EMI

Potential Applications

• Server
• Telecom
• Solar
• Lighting
• PC power
• AC-DC

Applications

• Adapters and chargers

Designers who used this product also designed with

• IPW60R060P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC016N06NS |
  N-Channel Power MOSFET
• 2EDN7524R |
  Gate driver ICs
• IPP60R125CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPL60R105P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• 1EDN8511B |
  Gate driver ICs
• IPW60R060P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC016N06NS |
  N-Channel Power MOSFET
• 2EDN7524R |
  Gate driver ICs
• IPP60R125CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPL60R105P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• 1EDN8511B |
  Gate driver ICs
• IPW60R060P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC016N06NS |
  N-Channel Power MOSFET

1
2

Infineon's CoolSiC™ Schottky diodes 600V G3 feature the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The generation 3 is based on the same technology platform as generation 2 with the introduction, at package level, of the so called diffusion soldering.

Summary of Features

• Benchmark switching behavior
• No reverse recovery charge
• Temperature independent switching behavior
• High operating temperature (T _j max 175°C)

Benefits

• System efficiency improvement compared to Si
  diodes
• Reduced cooling requirements
• Enabling higher frequency/increased power
  density
• Higher system reliability due to lower operating
  temperature
• Reduced EMI

Potential Applications

• Server
• Telecom
• Solar
• Lighting
• PC power
• AC-DC

Applications

• LED lighting system designs
• Smart speaker designs

Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom.

The benefits of the already existing high voltage technology CoolSiC™ Schottky diode 650 V G6 is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.

Summary of Features

• Offers best-in-class V_F and FOM Q_c x V_F
• Improved dv/dt ruggedness
• Easy and effective match with CoolMOS™ 7 SJ MOSFET families
• Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
• Reduced parasitic source inductance improves e iciency and ease-of-use
• Enables higher power density solutions
• Exceeding the highest quality standards

Benefits

• Enabling highest energy efficiency
• Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
• Reduced parasitic source inductance improves e iciency and ease-of-use
• Enables higher power density solutions
• Exceeding the highest quality standards

Potential Applications

• Telecom
• Server
• Solar
• PC power
• SMPS

Applications

• DIN rail power supplies
• Light electric vehicles (LEV)
• Telecommunication infrastructure

Designers who used this product also designed with

• 2EDS8165H |
  Gate driver ICs
• ICE2PCS01G |
  PFC-CCM (continuous conduction mode) ICs
• IPL60R065C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC065N06LS5 |
  N-Channel Power MOSFET
• IQE006NE2LM5CG |
  N-Channel Power MOSFET
• 1EDN7511B |
  Gate driver ICs
• BSZ22DN20NS3 G |
  N-Channel Power MOSFET
• IPDD60R050G7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSZ070N08LS5 |
  N-Channel Power MOSFET
• 1EDN7550B |
  Gate driver ICs
• IPT60R016CM8 |
  600 V CoolMOS™ 8
• IQD005N04NM6CG |
  N-Channel Power MOSFET
• IPDD60R125G7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPDD60R190G7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPT60R022S7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IQE046N08LM5CGSC |
  N-Channel Power MOSFET
• ICE2QR2280G-1 |
  CoolSET™ Quasi Resonant
• SN7002W |
  Small signal/small power MOSFET
• BSC016N06NS |
  N-Channel Power MOSFET
• 1EDB8275F |
  Gate driver ICs
• 2EDS8165H |
  Gate driver ICs
• ICE2PCS01G |
  PFC-CCM (continuous conduction mode) ICs
• IPL60R065C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC065N06LS5 |
  N-Channel Power MOSFET
• IQE006NE2LM5CG |
  N-Channel Power MOSFET
• 1EDN7511B |
  Gate driver ICs
• BSZ22DN20NS3 G |
  N-Channel Power MOSFET
• IPDD60R050G7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET

1
2
3
4
5

Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom.

The benefits of the already existing high voltage technology CoolSiC™ Schottky diode 650 V G6 is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.

Summary of Features

• Offers best-in-class V_F and FOM Q_c x V_F
• Improved dv/dt ruggedness
• Easy and effective match with CoolMOS™ 7 SJ MOSFET families
• Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
• Reduced parasitic source inductance improves e iciency and ease-of-use
• Enables higher power density solutions
• Exceeding the highest quality standards

Benefits

• Enabling highest energy efficiency
• Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
• Reduced parasitic source inductance improves e iciency and ease-of-use
• Enables higher power density solutions
• Exceeding the highest quality standards

Potential Applications

• Telecom
• Server
• Solar
• PC power
• SMPS

Applications

• 48 V intermediate bus converter (IBC)
• Complete system solutions for smart TVs
• DIN rail power supplies

Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom.

The benefits of the already existing high voltage technology CoolSiC™ Schottky diode 650 V G6 is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.

Summary of Features

• Offers best-in-class V_F and FOM Q_c x V_F
• Improved dv/dt ruggedness
• Easy and effective match with CoolMOS™ 7 SJ MOSFET families
• Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
• Reduced parasitic source inductance improves e iciency and ease-of-use
• Enables higher power density solutions
• Exceeding the highest quality standards

Benefits

• Enabling highest energy efficiency
• Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
• Reduced parasitic source inductance improves e iciency and ease-of-use
• Enables higher power density solutions
• Exceeding the highest quality standards

Potential Applications

• Telecom
• Server
• Solar
• PC power
• SMPS

Applications

• 1-phase string inverter solutions

Designers who used this product also designed with

• IPDQ60R010S7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC074N15NS5 |
  N-Channel Power MOSFET
• IPW60R037CM8 |
  600 V CoolMOS™ 8
• ICE2QR2280G-1 |
  CoolSET™ Quasi Resonant
• IPDD60R050G7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPL60R065P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPB60R060P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPW60R040C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPDQ60R010S7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC074N15NS5 |
  N-Channel Power MOSFET
• IPW60R037CM8 |
  600 V CoolMOS™ 8
• ICE2QR2280G-1 |
  CoolSET™ Quasi Resonant
• IPDD60R050G7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPL60R065P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPB60R060P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPW60R040C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET

1
2

Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom.

The benefits of the already existing high voltage technology CoolSiC™ Schottky diode 650 V G6 is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.

Summary of Features

• Offers best-in-class V_F and FOM Q_c x V_F
• Improved dv/dt ruggedness
• Easy and effective match with CoolMOS™ 7 SJ MOSFET families
• Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
• Reduced parasitic source inductance improves e iciency and ease-of-use
• Enables higher power density solutions
• Exceeding the highest quality standards

Benefits

• Enabling highest energy efficiency
• Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
• Reduced parasitic source inductance improves e iciency and ease-of-use
• Enables higher power density solutions
• Exceeding the highest quality standards

Potential Applications

• Telecom
• Server
• Solar
• PC power
• SMPS

Applications

• 48 V intermediate bus converter (IBC)
• DIN rail power supplies
• EV traction inverter
• Telecommunication infrastructure
• Uninterruptible power supplies (UPS)

1200 V Silicion Carbide Schottky diode in TO-220 real2pin package

The CoolSiC™ Schottky diode generation 5 1200 V, 2 A in a TO-220 real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.

Summary of Features

• Best-in-class forward voltage (V_F)
• No reverse recovery charge
• Mild positive temperature dependency of V_F
• Best-in-class surge current capability
• Excellent thermal performance

Benefits

• Highest system efficiency
• Improved system efficiency at low switching frequencies
• Increased power density at high switching frequencies
• Higher system reliability
• Reduced EMI

Applications

• 48 V intermediate bus converter (IBC)
• Mobile robots (AGV, AMR)
• Motor Control
• Photovoltaic
• Uninterruptible power supplies (UPS)

Designers who used this product also designed with

• BSC035N10NS5 |
  N-Channel Power MOSFET
• BSC040N10NS5 |
  N-Channel Power MOSFET
• IDW20G65C5B |
  CoolSiC™ Schottky Diodes
• BSC093N15NS5 |
  N-Channel Power MOSFET
• IPP320N20N3 G |
  N-Channel Power MOSFET
• 1EDI60N12AF |
  Gate driver ICs
• SN7002W |
  Small signal/small power MOSFET
• BSC035N10NS5 |
  N-Channel Power MOSFET
• BSC040N10NS5 |
  N-Channel Power MOSFET
• IDW20G65C5B |
  CoolSiC™ Schottky Diodes
• BSC093N15NS5 |
  N-Channel Power MOSFET
• IPP320N20N3 G |
  N-Channel Power MOSFET
• 1EDI60N12AF |
  Gate driver ICs
• SN7002W |
  Small signal/small power MOSFET
• BSC035N10NS5 |
  N-Channel Power MOSFET

1
2

Unparalleled efficiency and price performance

The CoolSiC™ Schottky diode 650 V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q _c x V _F).

Summary of Features

• The lowest V _F: 1.25V
• Best-in-class figure of merit (Q _c x V _F)
• No reverse recovery charge
• Temperature independent switching behavior
• High dv/dt ruggedness
• Optimized thermal behavior

Benefits

• Improved system efficiency over all load conditions
• Increased system power density
• Reduced cooling requirements and increased system reliability
• Enables extremely fast switching
• Easy and effective match with CoolMOS™ 7 families
• Optimal price performance

Potential Applications

• Server
• Telecom
• PC power
• Solar
• Lighting

Applications

• 48 V intermediate bus converter (IBC)
• Bringing a whole new lifestyle and health experience to today’s connected citizen
• General purpose motor drive - variating frequency and voltage
• Uninterruptible power supplies (UPS)

Designers who used this product also designed with

• BSC010N04LSI |
  N-Channel Power MOSFET
• BSC028N06NS |
  N-Channel Power MOSFET
• BSS123N |
  Small signal/small power MOSFET
• IRFR3806 |
  N-Channel Power MOSFET
• BSC016N06NS |
  N-Channel Power MOSFET
• ICE2QR2280G-1 |
  CoolSET™ Quasi Resonant
• IPD031N03L G |
  N-Channel Power MOSFET
• ICE3PCS02G |
  PFC-CCM (continuous conduction mode) ICs
• BSC009NE2LS |
  N-Channel Power MOSFET
• IPP60R180CM8 |
  600 V CoolMOS™ 8
• IPP65R190CFD |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSP125 |
  Small signal/small power MOSFET
• BSC014N06NS |
  N-Channel Power MOSFET
• ICE3PCS01G |
  PFC-CCM (continuous conduction mode) ICs
• BSC010N04LSI |
  N-Channel Power MOSFET
• BSC028N06NS |
  N-Channel Power MOSFET
• BSS123N |
  Small signal/small power MOSFET
• IRFR3806 |
  N-Channel Power MOSFET
• BSC016N06NS |
  N-Channel Power MOSFET
• ICE2QR2280G-1 |
  CoolSET™ Quasi Resonant
• IPD031N03L G |
  N-Channel Power MOSFET
• ICE3PCS02G |
  PFC-CCM (continuous conduction mode) ICs

1
2
3
4

1200 V Silicion Carbide Schottky diode in TO-220 real2pin package

The CoolSiC™ Schottky diode generation 5 1200 V, 5 A in a TO-220 real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.

Summary of Features

• Best-in-class forward voltage (V_F)
• No reverse recovery charge
• Mild positive temperature dependency of V_F
• Best-in-class surge current capability
• Excellent thermal performance

Benefits

• Highest system efficiency
• Improved system efficiency at low switching frequencies
• Increased power density at high switching frequencies
• Higher system reliability
• Reduced EMI

Applications

• Automotive battery management system (BMS)
• DIN rail power supplies
• Motor Control
• Photovoltaic
• Uninterruptible power supplies (UPS)

Designers who used this product also designed with

• IDH08SG60C |
  CoolSiC™ Schottky Diodes
• IPZA60R016CM8 |
  600 V CoolMOS™ 8
• IMBG120R234M2H |
  Silicon Carbide MOSFET Discretes
• IMZ120R030M1H |
  Silicon Carbide MOSFET Discretes
• IKZA50N65SS5 |
  IGBT discretes
• S25FL128SDPMFV000 |
  Quad SPI Flash
• S25FL256SAGMFB003 |
  Quad SPI Flash
• IPZA65R029CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPL65R195C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• FM25V10-GTR |
  F-RAM (Ferroelectric RAM)
• IDL08G65C5 |
  CoolSiC™ Schottky Diodes
• IDH08SG60C |
  CoolSiC™ Schottky Diodes
• IPZA60R016CM8 |
  600 V CoolMOS™ 8
• IMBG120R234M2H |
  Silicon Carbide MOSFET Discretes
• IMZ120R030M1H |
  Silicon Carbide MOSFET Discretes
• IKZA50N65SS5 |
  IGBT discretes
• S25FL128SDPMFV000 |
  Quad SPI Flash
• S25FL256SAGMFB003 |
  Quad SPI Flash
• IPZA65R029CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET

1
2
3

CoolSiC™ Schottky diode 650 V G5 in TO-220 real2pin

The CoolSiC™ Schottky diode 650 V, 6 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q _c x V _f).

Summary of Features

• Improved figure of merit (Q _c x V _f)
• No reverse recovery charge
• Soft switching reverse recovery waveform
• Temperature independent switching behavior
• High operating temperature (T _j max 175°C)
• Improved surge capability
• Pb-free lead plating

Benefits

• Higher safety margin against overvoltage and complements CoolMOS™ offer
• Improved efficiency over all load conditions
• Increased efficiency compared to Silicon Diode alternatives
• Reduced EMI compared to snappier Silicon diode reverse recovery waveform
• Highly stable switching performance
• Reduced cooling requirements
• Reduced risks of thermal runaway
• RoHS compliant
• Very high quality and high volume manufacturing capability

Potential Applications

• Solar
• UPS
• Motor control and drives

Applications

• 48 V intermediate bus converter (IBC)
• Automotive
• Cordless power tools and outdoor power equipment
• Edge computing
• Security Camera and Video Doorbell

Designers who used this product also designed with

• ICE2QR2280G-1 |
  CoolSET™ Quasi Resonant
• BSC010N04LS |
  N-Channel Power MOSFET
• IPW60R060P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IRFU3607 |
  N-Channel Power MOSFET
• BSC016N06NS |
  N-Channel Power MOSFET
• IPB60R099P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• 2EDS8165H |
  Gate driver ICs
• IPW60R125P6 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• 2EDL8124G |
  Gate driver ICs
• IPA60R180P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPA60R099P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC042NE7NS3 G |
  N-Channel Power MOSFET
• IPW60R120P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPP60R180CM8 |
  600 V CoolMOS™ 8
• BSC040N08NS5 |
  N-Channel Power MOSFET
• IPD70R360P7S |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPL60R060CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• ICE2QR2280G-1 |
  CoolSET™ Quasi Resonant
• BSC010N04LS |
  N-Channel Power MOSFET
• IPW60R060P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IRFU3607 |
  N-Channel Power MOSFET
• BSC016N06NS |
  N-Channel Power MOSFET
• IPB60R099P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• 2EDS8165H |
  Gate driver ICs
• IPW60R125P6 |
  500V-950V CoolMOS™ N-Channel Power MOSFET

1
2
3
4
5

Unparalleled efficiency and price performance

The CoolSiC™ Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q _c x V _F).

Summary of Features

• The lowest V _F: 1.25V
• Best-in-class figure of merit (Q _c x V _F)
• No reverse recovery charge
• Temperature independent switching behavior
• High dv/dt ruggedness
• Optimized thermal behavior

Benefits

• Improved system efficiency over all load conditions
• Increased system power density
• Reduced cooling requirements and increased system reliability
• Enables extremely fast switching
• Easy and effective match with CoolMOS™ 7 families
• Optimal price performance

Potential Applications

• Server
• Telecom
• PC power
• Solar
• Lighting

Applications

• 48 V intermediate bus converter (IBC)
• EV charging
• LED strips and signage
• Light electric vehicles (LEV)
• Uninterruptible power supplies (UPS)

Designers who used this product also designed with

• IPP111N15N3 G |
  N-Channel Power MOSFET
• IPW60R037CM8 |
  600 V CoolMOS™ 8
• IPW60R120P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPA60R099C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPP60R180CM8 |
  600 V CoolMOS™ 8
• BSS127 |
  Small signal/small power MOSFET
• IPP60R145CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• ICE3PCS01G |
  PFC-CCM (continuous conduction mode) ICs
• IPP023N08N5 |
  N-Channel Power MOSFET
• IPP60R120C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPT60R065S7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• ICE2QR2280G |
  CoolSET™ Quasi Resonant
• IPB072N15N3 G |
  N-Channel Power MOSFET
• BSC160N15NS5 |
  N-Channel Power MOSFET
• 2N7002DW |
  Small signal/small power MOSFET
• SN7002W |
  Small signal/small power MOSFET
• ICE2QR2280G-1 |
  CoolSET™ Quasi Resonant
• BSC004NE2LS5 |
  N-Channel Power MOSFET
• IPW60R070CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPP111N15N3 G |
  N-Channel Power MOSFET
• IPW60R037CM8 |
  600 V CoolMOS™ 8
• IPW60R120P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPA60R099C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPP60R180CM8 |
  600 V CoolMOS™ 8
• BSS127 |
  Small signal/small power MOSFET
• IPP60R145CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• ICE3PCS01G |
  PFC-CCM (continuous conduction mode) ICs

1
2
3
4
5

1200 V Silicion Carbide Schottky diode in TO-220 real2pin package

The CoolSiC™ Schottky diode generation 5 1200 V, 8 A in a TO-220 real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.

Summary of Features

• Best-in-class forward voltage (V_F)
• No reverse recovery charge
• Mild positive temperature dependency of V_F
• Best-in-class surge current capability
• Excellent thermal performance

Benefits

• Highest system efficiency
• Improved system efficiency at low switching frequencies
• Increased power density at high switching frequencies
• Higher system reliability
• Reduced EMI

Applications

• DIN rail power supplies
• Motor Control
• Photovoltaic
• Uninterruptible power supplies (UPS)

CoolSiC™ Schottky diode 650 V G5 in TO-220 real2pin

The CoolSiC™ Schottky diode 650 V, 8 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q _c x V _f).

Summary of Features

• Improved figure of merit (Q _c x V _f)
• No reverse recovery charge
• Soft switching reverse recovery waveform
• Temperature independent switching behavior
• High operating temperature (T _j max 175°C)
• Improved surge capability
• Pb-free lead plating

Benefits

• Higher safety margin against overvoltage and complements CoolMOS™ offer
• Improved efficiency over all load conditions
• Increased efficiency compared to Silicon Diode alternatives
• Reduced EMI compared to snappier Silicon diode reverse recovery waveform
• Highly stable switching performance
• Reduced cooling requirements
• Reduced risks of thermal runaway
• RoHS compliant
• Very high quality and high volume manufacturing capability

Potential Applications

• Solar
• UPS
• Motor control and drives

Applications

• 48 V intermediate bus converter (IBC)
• Data center and AI data center solutions
• DIN rail power supplies
• Edge computing
• Uninterruptible power supplies (UPS)

Designers who used this product also designed with

• IPP60R060P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC030N08NS5 |
  N-Channel Power MOSFET
• IPA60R099P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC011N03LS |
  N-Channel Power MOSFET
• IPD80R1K4P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC040N08NS5 |
  N-Channel Power MOSFET
• IPW60R045P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC014N04LS |
  N-Channel Power MOSFET
• IPP65R065C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPP60R070CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPW60R037CM8 |
  600 V CoolMOS™ 8
• BSC021N08NS5 |
  N-Channel Power MOSFET
• IPP051N15N5 |
  N-Channel Power MOSFET
• BSS169 |
  N-Channel Depletion Mode MOSFET
• IPW60R070CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC004NE2LS5 |
  N-Channel Power MOSFET
• IPW65R065C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPP60R099P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPW60R060P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPP60R060P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC030N08NS5 |
  N-Channel Power MOSFET
• IPA60R099P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC011N03LS |
  N-Channel Power MOSFET
• IPD80R1K4P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC040N08NS5 |
  N-Channel Power MOSFET
• IPW60R045P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC014N04LS |
  N-Channel Power MOSFET

1
2
3
4
5

1200 V Silicion Carbide Schottky diode in TO-220 real2pin package

The CoolSiC™ Schottky diode generation 5 1200 V, 10 A in a TO-220 real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point..

Summary of Features

• Best-in-class forward voltage (V_F)
• No reverse recovery charge
• Mild positive temperature dependency of V_F
• Best-in-class surge current capability
• Excellent thermal performance

Benefits

• Highest system efficiency
• Improved system efficiency at low switching frequencies
• Increased power density at high switching frequencies
• Higher system reliability
• Reduced EMI

Applications

• Central inverter solutions
• DIN rail power supplies
• LED strips and signage
• Motor Control
• Photovoltaic

Unparalleled efficiency and price performance

The CoolSiC™ Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q _c x V _F).

Summary of Features

• The lowest V _F: 1.25V
• Best-in-class figure of merit (Q _c x V _F)
• No reverse recovery charge
• Temperature independent switching behavior
• High dv/dt ruggedness
• Optimized thermal behavior
  

Benefits

• Improved system efficiency over all load conditions
• Increased system power density
• Reduced cooling requirements and increased system reliability
• Enables extremely fast switching
• Easy and effective match with CoolMOS™ 7 families
• Optimal price performance

Potential Applications

• Server
• Telecom
• PC power
• Solar
• Lighting

Applications

• 48 V intermediate bus converter (IBC)
• DIN rail power supplies
• Edge computing
• On-board charging (OBC) for electric vehicles
• Uninterruptible power supplies (UPS)

Designers who used this product also designed with

• IPW65R045C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPN80R1K4P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPL60R065P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC360N15NS3 G |
  N-Channel Power MOSFET
• IPW65R065C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IMW65R048M1H |
  Silicon Carbide MOSFET Discretes
• 2EDN7524G |
  Gate driver ICs
• IPW60R070CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC010N04LS |
  N-Channel Power MOSFET
• BSC030N08NS5 |
  N-Channel Power MOSFET
• IPT60R022S7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPW60R080P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BAS3010A-03W |
  Schottky Diodes
• IPW60R037CM8 |
  600 V CoolMOS™ 8
• BSC009NE2LS |
  N-Channel Power MOSFET
• ICE3PCS01G |
  PFC-CCM (continuous conduction mode) ICs
• IPP65R095C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IRLML2502TRPBF-1 |
  N-Channel Power MOSFET
• 1EDN7512B |
  Gate driver ICs
• IPW65R045C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPN80R1K4P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPL60R065P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC360N15NS3 G |
  N-Channel Power MOSFET
• IPW65R065C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IMW65R048M1H |
  Silicon Carbide MOSFET Discretes
• 2EDN7524G |
  Gate driver ICs
• IPW60R070CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET

1
2
3
4
5

CoolSiC™ Schottky diode 650 V G5 in TO-220 real2pin

The CoolSiC™ Schottky diode 650 V, 12 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q _c x V _f).

Summary of Features

• Improved figure of merit (Q _c x V _f)
• No reverse recovery charge
• Soft switching reverse recovery waveform
• Temperature independent switching behavior
• High operating temperature (T _j max 175°C)
• Improved surge capability
• Pb-free lead plating

Benefits

• Higher safety margin against overvoltage and complements CoolMOS™ offer
• Improved efficiency over all load conditions
• Increased efficiency compared to Silicon Diode alternatives
• Reduced EMI compared to snappier Silicon diode reverse recovery waveform
• Highly stable switching performance
• Reduced cooling requirements
• Reduced risks of thermal runaway
• RoHS compliant
• Very high quality and high volume manufacturing capability

Potential Applications

• Solar
• UPS
• Motor control and drives

Applications

• 48 V intermediate bus converter (IBC)
• DIN rail power supplies
• Edge computing
• Telecommunication infrastructure

Designers who used this product also designed with

• BSC036NE7NS3 G |
  N-Channel Power MOSFET
• IPW60R040C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPW60R070CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPP020N08N5 |
  N-Channel Power MOSFET
• IPN95R1K2P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPP60R060P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPP023NE7N3 G |
  N-Channel Power MOSFET
• IPW60R040CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPP051N15N5 |
  N-Channel Power MOSFET
• IRLML0030PBF-1 |
  N-Channel Power MOSFET
• ICE2QR2280G |
  CoolSET™ Quasi Resonant
• IPW60R037CM8 |
  600 V CoolMOS™ 8
• BSC021N08NS5 |
  N-Channel Power MOSFET
• IPW65R045C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IR11682SPBF |
  Synchronous Rectification ICs
• IPB044N15N5 |
  N-Channel Power MOSFET
• IPW60R024CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPW60R018CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPP027N08N5 |
  N-Channel Power MOSFET
• BSC010N04LS |
  N-Channel Power MOSFET
• BSC036NE7NS3 G |
  N-Channel Power MOSFET
• IPW60R040C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPW60R070CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPP020N08N5 |
  N-Channel Power MOSFET
• IPN95R1K2P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPP60R060P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPP023NE7N3 G |
  N-Channel Power MOSFET
• IPW60R040CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET

1
2
3
4
5

Unparalleled efficiency and price performance

The CoolSiC™ Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q _c x V _F).

Summary of Features

• The lowest V _F: 1.25V
• Best-in-class figure of merit (Q _c x V _F)
• No reverse recovery charge
• Temperature independent switching behavior
• High dv/dt ruggedness
• Optimized thermal behavior

Benefits

• Improved system efficiency over all load conditions
• Increased system power density
• Reduced cooling requirements and increased system reliability
• Enables extremely fast switching
• Easy and effective match with CoolMOS™ 7 families
• Optimal price performance

Potential Applications

• Server
• Telecom
• PC power
• Solar
• Lighting

Applications

• 48 V intermediate bus converter (IBC)
• Adapters and chargers
• DIN rail power supplies
• EV thermal management system
• Telecommunication infrastructure

Designers who used this product also designed with

• BSC009NE2LS5 |
  N-Channel Power MOSFET
• BSC500N20NS3 G |
  N-Channel Power MOSFET
• IPZ60R060C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IRLML2803 |
  N-Channel Power MOSFET
• BSC007N04LS6 |
  N-Channel Power MOSFET
• IPT60R022S7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPZ65R045C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPL60R060CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• 2EDS8265H |
  Gate driver ICs
• 2EDN7524R |
  Gate driver ICs
• ICE2QR2280G-1 |
  CoolSET™ Quasi Resonant
• 1EDN7511B |
  Gate driver ICs
• BSC004NE2LS5 |
  N-Channel Power MOSFET
• IPW60R040CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPP041N12N3 G |
  N-Channel Power MOSFET
• IRLML5103 |
  P-Channel Power MOSFET
• IPZ65R065C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPZ60R040C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPD60R180P7S |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPN95R3K7P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC009NE2LS5 |
  N-Channel Power MOSFET
• BSC500N20NS3 G |
  N-Channel Power MOSFET
• IPZ60R060C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IRLML2803 |
  N-Channel Power MOSFET
• BSC007N04LS6 |
  N-Channel Power MOSFET
• IPT60R022S7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPZ65R045C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPL60R060CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET

1
2
3
4
5

1200 V Silicion Carbide Schottky diode in TO-220 real2pin package

The CoolSiC™ Schottky diode generation 5 1200 V, 16 A in a TO-220 real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.

Summary of Features

• Best-in-class forward voltage (V_F)
• No reverse recovery charge
• Mild positive temperature dependency of V_F
• Best-in-class surge current capability
• Excellent thermal performance

Benefits

• Highest system efficiency
• Improved system efficiency at low switching frequencies
• Increased power density at high switching frequencies
• Higher system reliability
• Reduced EMI

Applications

• Motor Control
• Photovoltaic
• Uninterruptible power supplies (UPS)
• Wired Communication

Unparalleled efficiency and price performance

The CoolSiC™ Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q _c x V _F).

Summary of Features

• The lowest V _F: 1.25V
• Best-in-class figure of merit (Q _c x V _F)
• No reverse recovery charge
• Temperature independent switching behavior
• High dv/dt ruggedness
• Optimized thermal behavior

Benefits

• Improved system efficiency over all load conditions
• Increased system power density
• Reduced cooling requirements and increased system reliability
• Enables extremely fast switching
• Easy and effective match with CoolMOS™ 7 families
• Optimal price performance

Potential Applications

• Server
• Telecom
• PC power
• Solar
• Lighting

Applications

• Energy Storage Systems
• Light electric vehicles (LEV)
• Telecommunication infrastructure

Designers who used this product also designed with

• ICE3AR0680JZ |
  CoolSET™ Fixed Frequency
• BSC012N06NS |
  N-Channel Power MOSFET
• BSC004NE2LS5 |
  N-Channel Power MOSFET
• IPT60R022S7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC026N08NS5 |
  N-Channel Power MOSFET
• IPW60R045P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPW60R055CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• 1EDN8511B |
  Gate driver ICs
• IPZA60R037CM8 |
  600 V CoolMOS™ 8
• ICE3AR0680JZ |
  CoolSET™ Fixed Frequency
• BSC012N06NS |
  N-Channel Power MOSFET
• BSC004NE2LS5 |
  N-Channel Power MOSFET
• IPT60R022S7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC026N08NS5 |
  N-Channel Power MOSFET
• IPW60R045P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPW60R055CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• 1EDN8511B |
  Gate driver ICs

1
2
3

CoolSiC™ Schottky diode 650 V G5 in TO-220 real2pin

The CoolSiC™ Schottky diode 650 V, 20 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q _c x V _f).

Summary of Features

• Improved figure of merit (Q _c x V _f)
• No reverse recovery charge
• Soft switching reverse recovery waveform
• Temperature independent switching behavior
• High operating temperature (T _j max 175°C)
• Improved surge capability
• Pb-free lead plating

Benefits

• Higher safety margin against overvoltage and complements CoolMOS™ offer
• Improved efficiency over all load conditions
• Increased efficiency compared to Silicon Diode alternatives
• Reduced EMI compared to snappier Silicon diode reverse recovery waveform
• Highly stable switching performance
• Reduced cooling requirements
• Reduced risks of thermal runaway
• RoHS compliant
• Very high quality and high volume manufacturing capability

Potential Applications

• Solar
• UPS
• Motor control and drives

Applications

• 48 V intermediate bus converter (IBC)
• Automotive body control module (BCM)
• EV charging

Designers who used this product also designed with

• IPP051N15N5 |
  N-Channel Power MOSFET
• IRLML0030PBF-1 |
  N-Channel Power MOSFET
• IR11682SPBF |
  Synchronous Rectification ICs
• IPZ60R099P6 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• ICE2QR2280G |
  CoolSET™ Quasi Resonant
• IPZ60R040C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSO220N03MD G |
  N-Channel Power MOSFET
• IPT60R022S7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• 2EDN7524R |
  Gate driver ICs
• BSC004NE2LS5 |
  N-Channel Power MOSFET
• IPL60R060CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC026N08NS5 |
  N-Channel Power MOSFET
• ICE2QR2280G-1 |
  CoolSET™ Quasi Resonant
• 1EDI20N12AF |
  Gate driver ICs
• BSC047N08NS3 G |
  N-Channel Power MOSFET
• 2EDL8124G |
  Gate driver ICs
• IPW60R070CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPW60R060P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPP051N15N5 |
  N-Channel Power MOSFET
• IRLML0030PBF-1 |
  N-Channel Power MOSFET
• IR11682SPBF |
  Synchronous Rectification ICs
• IPZ60R099P6 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• ICE2QR2280G |
  CoolSET™ Quasi Resonant
• IPZ60R040C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSO220N03MD G |
  N-Channel Power MOSFET
• IPT60R022S7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET

1
2
3
4
5

Unparalleled efficiency and price performance

The CoolSiC™ Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q _c x V _F).

Summary of Features

• The lowest V _F: 1.25V
• Best-in-class figure of merit (Q _c x V _F)
• No reverse recovery charge
• Temperature independent switching behavior
• High dv/dt ruggedness
• Optimized thermal behavior

Benefits

• Improved system efficiency over all load conditions
• Increased system power density
• Reduced cooling requirements and increased system reliability
• Enables extremely fast switching
• Easy and effective match with CoolMOS™ 7 families
• Optimal price performance

Potential Applications

• Server
• Telecom
• PC power
• Solar
• Lighting

Applications

• 1-phase string inverter solutions
• 48 V intermediate bus converter (IBC)
• DIN rail power supplies
• On-board charging (OBC) for electric vehicles
• Telecommunication infrastructure

Designers who used this product also designed with

• BSC021N08NS5 |
  N-Channel Power MOSFET
• IPW60R070CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPW60R024CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPW60R024P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPL60R060CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC007N04LS6 |
  N-Channel Power MOSFET
• 2EDN7524R |
  Gate driver ICs
• BSC025N08LS5 |
  N-Channel Power MOSFET
• BSC004NE2LS5 |
  N-Channel Power MOSFET
• ICE2QR2280G-1 |
  CoolSET™ Quasi Resonant
• 2EDN7524G |
  Gate driver ICs
• 2EDF7275F |
  Gate driver ICs
• IPL60R104C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• ICE2QR2280G |
  CoolSET™ Quasi Resonant
• IPZ65R045C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPN95R1K2P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPW65R045C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC011N03LS |
  N-Channel Power MOSFET
• IR3888MTRPBF |
  Integrated POL Voltage Regulators
• BSC014N04LS |
  N-Channel Power MOSFET
• BSC021N08NS5 |
  N-Channel Power MOSFET
• IPW60R070CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPW60R024CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPW60R024P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPL60R060CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC007N04LS6 |
  N-Channel Power MOSFET
• 2EDN7524R |
  Gate driver ICs
• BSC025N08LS5 |
  N-Channel Power MOSFET

1
2
3
4
5

1200 V Silicon Carbide Schottky diode in D²PAK real 2-pin package

The CoolSiC™ Schottky diodes generation 5 1200 V, 5 A is now available in a D²PAK real 2-pin package. Connecting SiC diodes in parallel and in a small device package, a high efficient system can be achieved while minimizing board space requirement. The elimination of the middle pin reduces a risk of partial discharge at high voltage and high frequency operation.

Summary of Features

• Zero Qrr leading to no reverse recovery losses
• High surge current capability
• Real two-pin package with 4.7 mm creepage and 4.4 mm clearance distances
• Tight forward voltage distribution
• Temperature-independent switching behavior
• Low forward voltage even at high operating temperature

Benefits

• Enabling higher frequency / increased power density in compact designs
• System size/cost saving due to reduced heatsink requirements and smaller magnetics
• Reduce a risk of partial discharge on the surface (real 2-pin)
• System efficiency improvement over Si diodes
• System reliability improvement
• Reduced EMI
• RoHS II standard compliant (Pb-free die attach)

Applications

• DIN rail power supplies
• LED lighting system designs
• Motor Control
• Photovoltaic
• Power conversion

Designers who used this product also designed with

• ISP14EP15LM |
  P-Channel Power MOSFET
• IDK08G65C5 |
  CoolSiC™ Schottky Diodes
• IPB65R110CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• ISP14EP15LM |
  P-Channel Power MOSFET
• IDK08G65C5 |
  CoolSiC™ Schottky Diodes
• IPB65R110CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• ISP14EP15LM |
  P-Channel Power MOSFET
• IDK08G65C5 |
  CoolSiC™ Schottky Diodes
• IPB65R110CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET

1200 V Silicon Carbide Schottky diode in D²PAK real 2-pin package

The CoolSiC™ Schottky diodes generation 5 1200 V, 8 A is now available in a D²PAK real 2-pin package. Connecting SiC diodes in parallel and in a small device package, a high efficient system can be achieved while minimizing board space requirement. The elimination of the middle pin reduces a risk of partial discharge at high voltage and high frequency operation.

Summary of Features

• Zero Qrr leading to no reverse recovery losses
• High surge current capability
• Real two-pin package with 4.7 mm creepage and 4.4 mm clearance distances
• Tight forward voltage distribution
• Temperature-independent switching behavior
• Low forward voltage even at high operating temperature

Benefits

• Enabling higher frequency / increased power density in compact designs
• System size/cost saving due to reduced heatsink requirements and smaller magnetics
• Reduce a risk of partial discharge on the surface (real 2-pin)
• System efficiency improvement over Si diodes
• System reliability improvement
• Reduced EMI
• RoHS II standard compliant (Pb-free die attach)

Applications

• LED lighting system designs
• Photovoltaic
• Power conversion
• Uninterruptible power supplies (UPS)

1200 V Silicon Carbide Schottky diode in D²PAK real 2-pin package

The CoolSiC™ Schottky diodes generation 5 1200 V, 10 A is now available in a D²PAK real 2-pin package. Connecting SiC diodes in parallel and in a small device package, a high efficient system can be achieved while minimizing board space requirement. The elimination of the middle pin reduces a risk of partial discharge at high voltage and high frequency operation.

Summary of Features

• Zero Qrr leading to no reverse recovery losses
• High surge current capability
• Real two-pin package with 4.7 mm creepage and 4.4 mm clearance distances
• Tight forward voltage distribution
• Temperature-independent switching behavior
• Low forward voltage even at high operating temperature

Benefits

• Enabling higher frequency / increased power density in compact designs
• System size/cost saving due to reduced heatsink requirements and smaller magnetics
• Reduce a risk of partial discharge on the surface (real 2-pin)
• System efficiency improvement over Si diodes
• System reliability improvement
• Reduced EMI
• RoHS II standard compliant (Pb-free die attach)

Applications

• 48 V intermediate bus converter (IBC)
• DIN rail power supplies
• Mobile robots (AGV, AMR)
• Motor Control
• Solutions for inductive wireless charging above 50 W

Designers who used this product also designed with

• BSC040N10NS5 |
  N-Channel Power MOSFET
• BSC093N15NS5 |
  N-Channel Power MOSFET
• IPB60R060C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IAUTN12S5N017 |
  Automotive MOSFET
• IDW20G65C5B |
  CoolSiC™ Schottky Diodes
• IMBG120R078M2H |
  Silicon Carbide MOSFET Discretes
• IMBF170R450M1 |
  Silicon Carbide MOSFET Discretes
• IPW65R065C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• 2EDN7524G |
  Gate driver ICs
• ICE2QR2280G-1 |
  CoolSET™ Quasi Resonant
• SAL-TC387QP-160F300S AE
  AURIX™ Family – TC38xQP
• BSC040N10NS5 |
  N-Channel Power MOSFET
• BSC093N15NS5 |
  N-Channel Power MOSFET
• IPB60R060C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IAUTN12S5N017 |
  Automotive MOSFET
• IDW20G65C5B |
  CoolSiC™ Schottky Diodes
• IMBG120R078M2H |
  Silicon Carbide MOSFET Discretes
• IMBF170R450M1 |
  Silicon Carbide MOSFET Discretes
• IPW65R065C7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET

1
2
3

CoolSiC™ Schottky diode 650 V G5 in D2PAK real2pin

The CoolSiC™ Schottky diode 650 V, 10 A generation 5 in D2PAK real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q _c x V _f).

Summary of Features

• Improved figure of merit (Q _c x V _f)
• No reverse recovery charge
• Soft switching reverse recovery waveform
• Temperature independent switching behavior
• High operating temperature (T _j max 175°C)
• Improved surge capability
• Pb-free lead plating

Benefits

• Higher safety margin against overvoltage and complements CoolMOS™ offer
• Improved efficiency over all load conditions
• Increased efficiency compared to Silicon Diode alternatives
• Reduced EMI compared to snappier Silicon diode reverse recovery waveform
• Highly stable switching performance
• Reduced cooling requirements
• Reduced risks of thermal runaway
• RoHS compliant
• Very high quality and high volume manufacturing capability

Potential Applications

• Solar
• UPS
• Motor control and drives

Applications

• General purpose motor drive - variating frequency and voltage

1200 V Silicon Carbide Schottky diode in D²PAK real 2-pin package

The CoolSiC™ Schottky diodes generation 5 1200 V, 16 A is now available in a D²PAK real 2-pin package. Connecting SiC diodes in parallel and in a small device package, a high efficient system can be achieved while minimizing board space requirement. The elimination of the middle pin reduces a risk of partial discharge at high voltage and high frequency operation.

Summary of Features

• Zero Qrr leading to no reverse recovery losses
• High surge current capability
• Real two-pin package with 4.7 mm creepage and 4.4 mm clearance distances
• Tight forward voltage distribution
• Temperature-independent switching behavior
• Low forward voltage even at high operating temperature

Benefits

• Enabling higher frequency / increased power density in compact designs
• System size/cost saving due to reduced heatsink requirements and smaller magnetics
• Reduce a risk of partial discharge on the surface (real 2-pin)
• System efficiency improvement over Si diodes
• System reliability improvement
• Reduced EMI
• RoHS II standard compliant (Pb-free die attach)

Applications

• 1-phase string inverter solutions
• Motor Control
• Photovoltaic
• Power conversion
• Uninterruptible power supplies (UPS)

Designers who used this product also designed with

• IGB20N65S5 |
  IGBT discretes
• IDK12G65C5 |
  CoolSiC™ Schottky Diodes
• IKB20N65EH5 |
  IGBT discretes
• IKB40N65EH5 |
  IGBT discretes
• AIMBG120R040M1 |
  Silicon Carbide MOSFET Discretes
• 1ED3125MU12F |
  Gate driver ICs
• IPD80R2K7C3A |
  Automotive MOSFET
• IMBG120R078M2H |
  Silicon Carbide MOSFET Discretes
• IGB50N65H5 |
  IGBT discretes
• IGB20N65S5 |
  IGBT discretes
• IDK12G65C5 |
  CoolSiC™ Schottky Diodes
• IKB20N65EH5 |
  IGBT discretes
• IKB40N65EH5 |
  IGBT discretes
• AIMBG120R040M1 |
  Silicon Carbide MOSFET Discretes
• 1ED3125MU12F |
  Gate driver ICs
• IPD80R2K7C3A |
  Automotive MOSFET
• IMBG120R078M2H |
  Silicon Carbide MOSFET Discretes

1
2
3

1200 V Silicon Carbide Schottky diode in D²PAK real 2-pin package

The CoolSiC™ Schottky diodes generation 5 1200 V, 20 A is now available in a D²PAK real 2-pin package. Connecting SiC diodes in parallel and in a small device package, a high efficient system can be achieved while minimizing board space requirement. The elimination of the middle pin reduces a risk of partial discharge at high voltage and high frequency operation.

Summary of Features

• Zero Qrr leading to no reverse recovery losses
• High surge current capability
• Real two-pin package with 4.7 mm creepage and 4.4 mm clearance distances
• Tight forward voltage distribution
• Temperature-independent switching behavior
• Low forward voltage even at high operating temperature

Benefits

• Enabling higher frequency / increased power density in compact designs
• System size/cost saving due to reduced heatsink requirements and smaller magnetics
• Reduce a risk of partial discharge on the surface (real 2-pin)
• System efficiency improvement over Si diodes
• System reliability improvement
• Reduced EMI
• RoHS II standard compliant (Pb-free die attach)

Applications

• 1-phase string inverter solutions
• Energy Storage Systems
• General purpose motor drive - variating frequency and voltage
• Motor Control
• Photovoltaic

CoolSiC™ Schottky diode 650 V G5 in Thin-PAK 8x8

The CoolSiC™ Schottky diode 650 V, 4 A generation 5 in Thin-PAK 8x8 package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q _c x V _f).

Summary of Features

• Improved figure of merit (Q _c x V _f)
• No reverse recovery charge
• Soft switching reverse recovery waveform
• Temperature independent switching behavior
• High operating temperature (T _j max 175°C)
• Improved surge capability
• Pb-free lead plating

Benefits

• Higher safety margin against overvoltage and complements CoolMOS™ offer
• Improved efficiency over all load conditions
• Increased efficiency compared to Silicon Diode alternatives
• Reduced EMI compared to snappier Silicon diode reverse recovery waveform
• Highly stable switching performance
• Reduced cooling requirements
• Reduced risks of thermal runaway
• RoHS compliant
• Very high quality and high volume manufacturing capability

Potential Applications

• Solar
• UPS
• Motor control and drives

Applications

• 48 V intermediate bus converter (IBC)
• Uninterruptible power supplies (UPS)

Designers who used this product also designed with

• IPT60R125G7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPD80R900P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC190N15NS3 G |
  N-Channel Power MOSFET
• BSC010N04LS |
  N-Channel Power MOSFET
• IRS21864S |
  Gate driver ICs
• IPT60R040S7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPL60R115CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPL60R105P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC010N04LSI |
  N-Channel Power MOSFET
• 1EDI60N12AF |
  Gate driver ICs
• ICE5QR1680BG |
  CoolSET™ Quasi Resonant
• BSC007N04LS6 |
  N-Channel Power MOSFET
• BSS84P |
  Small signal/small power MOSFET
• IPT60R125G7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPD80R900P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• BSC190N15NS3 G |
  N-Channel Power MOSFET
• BSC010N04LS |
  N-Channel Power MOSFET
• IRS21864S |
  Gate driver ICs
• IPT60R040S7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPL60R115CFD7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET
• IPL60R105P7 |
  500V-950V CoolMOS™ N-Channel Power MOSFET

1
2
3
4