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High Linearity RF Transistors -- BFP650

High Linearity Low Noise SiGe:C NPN RF Transistor

Summary of Features

Highly linear low noise driver amplifier for all RF frontends up to 4.5 GHz
Output compression point OP1dB = 17 dBm at 70 mA, 3V, 2.4 GHz, 50Ω system
Output 3rd order intermodulation point OIP3 = 30 dBm at 70 mA, 3 V, 2.4 GHz, 50 Ω system
Maximum available gain Gma = 17.5 dB at 70 mA, 3V, 2.4 GHz
Minimum noise figure NFmin = 1 dB at 30 mA, 3V, 2.4 GHz
Based on Infineon´s reliable, high volume SiGe:C wafer technology
Easy to use Pb-free (RoHS compliant) standard package with visible leads

Potential Applications

Driver amplifier
ISM bands 434 and 868 MHz
1.9 GHz cordless phones
CATV LNA
Transmitter driver amplifier
2.4 GHz WLAN / Bluetooth, 2.4 / 3.5 GHz WiMAX
Output stage LNA for active antennas
TV, GPS, SDARS
2.4 / 5 GHz WLAN
2.4 / 3.5 / 5 GHz WiMAX, etc.
Suitable for 5 - 10.5 GHz oscillators

Bipolar Transistor, Digital Transistor -- BCR133

NPN Silicon Digital Transistor

Summary of Features

Switching in circuit, inverter, interface circuit, drive circuit
Built in bias resistor (R1 = 10 kΩ, R2 = 10 kΩ)
BCR133S: Two internally isolated transistors with good matching in one multichip package
BCR133S: For orientation in reel see package information below
Pb-free (RoHS compliant) package
Qualified according AEC Q101

Bipolar Transistor, Digital Transistor -- BCR135W

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Bipolar Transistor, Digital Transistor -- BCR158W

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Bipolar Transistor, Digital Transistor -- BCR166

PNP Silicon Digital Transistor

Summary of Features

Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor (R1 = 4.7 kΩ , R2 = 47 kΩ )
Pb-free (RoHS compliant) package
Qualified according AEC Q101

Bipolar Transistor, Digital Transistor -- BCR196

PNP Silicon Digital Transistor

Summary of Features

Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor (R1 = 47kΩ , R2 = 22kΩ )
Pb-free (RoHS compliant) package
Qualified according AEC Q101

Bipolar Transistor, Digital Transistor -- BCR505

NPN Silicon Digital Transistor

Summary of Features

Built in bias resistor (R1= 2.2 kΩ, R2= 10 kΩ)
Pb-free (RoHS compliant) package
Qualified according AEC Q101

Bipolar Transistor, Digital Transistor -- BCR555

PNP Silicon Digital Transistor

Summary of Features

Built in bias resistor (R1= 2.2 kΩ, R2= 10 kΩ)
Pb-free (RoHS compliant) package
Qualified according AEC Q101

Bipolar Transistor, Fast Switching Transistor -- SMBT3906U

PNP Silicon Switching Transistor

Summary of Features

High DC current gain: 0.1 mA to 100 mA
Low collector-emitter saturation voltage
For SMBT3906S and SMBT3906U:
Two (galvanic) internal isolated transistor with good matching in one package
Complementary types: SMBT3904...MMBT3904 (NPN) SMBT3906S/ U: for orientation in reel see package information below
Pb-free (RoHS compliant) package
Qualified according AEC Q101

Bipolar Transistor, Fast Switching Transistor -- SMBT3904S

NPN Silicon Switching Transistors

Summary of Features

High DC current gain: 0.1 mA to 100 mA
Low collector-emitter saturation voltage
For SMBT3904S:
Two (galvanic) internal isolated transistors with good matching in one package
Complementary types: SMBT3906... MMBT3906
SMBT3904S: For orientation in reel see package information below
Pb-free (RoHS compliant) package
Qualified according AEC Q101

Bipolar Transistor, Fast Switching Transistor -- SMBT2222A / MMBT2222A

NPN Silicon Switching Transistor

Summary of Features

Low collector-emitter saturation voltage
Complementary type: SMBT2907A / MMBT2907A (PNP)
Pb-free (RoHS compliant) package
Qualified according AEC Q101

Bipolar Transistor, Fast Switching Transistor -- SMBT2907A / MMBT2907A

PNP Silicon Switching Transistor

Summary of Features

Low collector-emitter saturation voltage
Complementary type: SMBT2222A / MMBT2222A (NPN)
Pb-free (RoHS compliant) package
Qualified according AEC Q101

Bipolar Transistor, Fast Switching Transistor -- SMBT3904 / MMBT3904

NPN Silicon Switching Transistors

Summary of Features

High DC current gain: 0.1 mA to 100 mA
Low collector-emitter saturation voltage For SMBT3904S:
Two (galvanic) internal isolated transistors with good matching in one package
Complementary types: SMBT3906... MMBT3906 .SMBT3904S: For orientation in reel see package information below
Pb-free (RoHS compliant) package
Qualified according AEC Q101

Bipolar Transistor, Fast Switching Transistor -- SMBT3904PN

NPN / PNP Silicon Switching Transistor Array

Summary of Features

High current gain
Low collector-emitter saturation voltage
Two (galvanic) internal isolated NPN / PNP transistor in one package
Pb-free (RoHS compliant) package
Qualified according AEC Q101

Bipolar Transistor, Fast Switching Transistor -- SMBT3904UPN

NPN / PNP Silicon Switching Transistor Array

Summary of Features

High current gain
Low collector-emitter saturation voltage
Two (galvanic) internal isolated NPN / PNP transistor in one package
Pb-free (RoHS compliant) package
Qualified according AEC Q101

Bipolar Transistor, Fast Switching Transistor -- SMBT3906

PNP Silicon Switching Transistors

Summary of Features

High DC current gain: 0.1 mA to 100 mA
Low collector-emitter saturation voltage For SMBT3906S and SMBT3906U:
Two (galvanic) internal isolated transistor with good matching in one package
Complementary types: SMBT3904...MMBT3904 (NPN)
SMBT3906S/ U: for orientation in reel see package information below
Pb-free (RoHS compliant) package
Qualified according AEC Q101

Bipolar Transistor, Fast Switching Transistor -- SMBT3906S

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Bipolar Transistor, General Purpose Transistor -- BC847BW

NPN Silicon AF Transistors

Summary of Features

High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC857...-BC860...(PNP)
Pb-free (RoHS compliant) package
Qualified according AEC Q1011
BC847BL3 is not qualified according AEC Q101
¹BC847BL3 is not qualified according AEC Q101

Potential Applications

For AF input stages and driver applications

Bipolar Transistor, General Purpose Transistor -- BC846PN

NPN/PNP Silicon AF Transistor Arrays

Summary of Features

High current gain
Low collector-emitter saturation voltage
Two (galvanic) internal isolated NPN/PNP transistor in one package
Pb-free (RoHS compliant) package
Qualified according AEC Q101

Potential Applications

For AF input stage and driver applications

Bipolar Transistor, General Purpose Transistor -- BC847CW

NPN Silicon AF Transistors

Summary of Features

High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC857...-BC860...(PNP)
Pb-free (RoHS compliant) package
Qualified according AEC Q101 ¹⁾
¹BC847BL3 is not qualified according AEC Q101

Potential Applications

For AF input stages and driver applications

Bipolar Transistor, General Purpose Transistor -- BCP56-10

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Bipolar Transistor, General Purpose Transistor -- BCX68-25

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Bipolar Transistor, High Voltage Transistor -- SMBTA42

NPN Silicon High-Voltage Transistors

Summary of Features

Low collector-emitter saturation voltage
Complementary types: SMBTA92 / MMBTA92(PNP)
Pb-free (RoHS compliant) package
Qualified according AEC Q101

Bipolar Transistor, High Voltage Transistor -- BCX41

NPN Silicon AF and Switching Transistor

Summary of Features

For general AF applications
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: BCX42 (PNP)
Pb-free (RoHS compliant) package
Qualified according AEC Q101

Potential Applications

For general AF applications

Bipolar Transistor, High Voltage Transistor -- BCX42

NPN Silicon AF and Switching Transistor

Summary of Features

For general AF applications
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: BCX41 (NPN)
Pb-free (RoHS compliant) package
Qualified according AEC Q101

Potential Applications

For general AF applications

Bipolar Transistor, High Voltage Transistor -- BFN18

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Bipolar Transistor, High Voltage Transistor -- BFN19

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Bipolar Transistor, High Voltage Transistor -- BFN24

NPN Silicon High-Voltage Transistors

Summary of Features

Suitable for video output stages in TV sets and switching power supplies
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: BFN27 (PNP)
Pb-free (RoHS compliant) package
Qualified according AEC Q101

Potential Applications

Suitable for video output stages TV sets and switching power supplies

Bipolar Transistor, High Voltage Transistor -- BFN26

NPN Silicon High-Voltage Transistors

Summary of Features

Suitable for video output stages in TV sets and switching power supplies
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: BFN27 (PNP)
Pb-free (RoHS compliant) package
Qualified according AEC Q102

Potential Applications

Suitable for video output stages TV sets and switching power supplies

Bipolar Transistor, High Voltage Transistor -- BFN27

PNP Silicon High-Voltage Transistors

Summary of Features

Suitable for video output stages in TV sets and switching power supplies
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: BFN26 (NPN)
Pb-free (RoHS compliant) package
Qualified according AEC Q101

Potential Applications

Suitable for video output stages TV sets and switching power supplies

Bipolar Transistor, High Voltage Transistor -- BFN38

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Bipolar Transistor, High Voltage Transistor -- BFN39

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Bipolar Transistor, High Voltage Transistor -- PZTA42

Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // High Voltage Transistor // PZTA42

Bipolar Transistor, High Voltage Transistor -- SMBTA92 / MMBTA92

PNP Silicon High-Voltage Transistors

Summary of Features

Suitable for video output stages in TV sets and switching power supplies
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types:
SMBTA42 / MMBT42 (NPN)
Pb-free (RoHS compliant) package
Qualified according AEC Q101

Potential Applications

Suitable for video output stages TV sets and switching power supplies

High Linearity RF Transistors -- BFR193

NPN Silicon RF Transistor

Summary of Features

For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
fT = 8 GHz, NFmin = 1 dB at 900 MHz
Pb-free (RoHS compliant) package

Potential Applications

Wireless Communications
LNA in RF Front-end
for various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems.

Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR183S -- BCR183S

PNP Silicon Digital Transistor

Summary of Features

Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor (R1 = 10 kΩ , R2 = 10 kΩ)
BCR183S / U: Two internally isolated transistors with good matching in one multichip package
BCR183S / U: For orientation in reel see package information below
Pb-free (RoHS compliant) package ¹⁾
Qualified according AEC Q101

Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR583 -- BCR583

PNP Silicon Digital Transistor

Summary of Features

Built in bias resistor (R1= 10 kΩ, R2= 10 kΩ)
Pb-free (RoHS compliant) package
Qualified according AEC Q101

IGBT Discretes -- IKP40N65H5

High Speed 650 V, 40 A hard-switching TRENCHSTOP^TMIGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT.

Summary of Features

650 V breakthrough voltage
Compared to best-in-class HighSpeed 3 family
Factor 2.5 lower Q_g
Factor 2 reduction in switching losses
200mV reduction in V_CEsat
Co-packed with Rapid Si-diode technology
Low C_OES/E_OSS
Mild positive temperature coefficient V_CEsat
Temperature stability of V_f

Benefits

Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
50 V increase in the bus voltage possible without compromising reliability
Higher power density design

Potential Applications

Applications

Smart induction cooktop – precise and efficient heating control

HiRel Silicon Bipolar Transistor -- BFY181 (ES)

HiRel Microwave Transistor

Summary of Features

Hermetically sealed microwave package
fT= 8 GHz
F = 2.2 dB at 2 GHz
Type Variant No. 03

ESA Space Qualified ESSCC Detail Spec. No.: 5611/006/03 B

Potential Applications

For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA.

Applications

Space applications

HiRel Silicon Bipolar Transistor -- BFY181 (P)

HiRel Microwave Transistor

Summary of Features

Hermetically sealed microwave package
fT= 8 GHz
F = 2.2 dB at 2 GHz

Potential Applications

For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA.

Quality level for Engineering Models

Applications

Space applications

HiRel Silicon Bipolar Transistor -- BFY182 (ES)

HiRel Microwave Transistor

Summary of Features

HiRel Discrete and Microwave Semiconductor
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA.
Hermetically sealed microwave package
fT= 8 GHz
F = 2.4 dB at 2 GHz
Type Variant No. 04

ESA Space Qualified ESA/SCC Detail Spec. No.: 5611/006/04 B

Applications

Space applications

HiRel Silicon Bipolar Transistor -- BFY182 (P)

HiRel Microwave Transistor

Summary of Features

HiRel Discrete and Microwave Semiconductor
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA.
Hermetically sealed microwave package
fT= 8 GHz
F = 2.4 dB at 2 GHz
Type Variant No. 04

Potential Applications

Quality level for Engineering Models

Applications

Space applications

HiRel Silicon Bipolar Transistor -- BFY183 (ES)

HiRel Microwave Transistor

Summary of Features

HiRel Discrete and Microwave Semiconductor
For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA.
Hermetically sealed microwave package
fT= 8 GHz
F = 2.3 dB at 2 GHz
Type Variant No. 05

ESA Space Qualified ESA/SCC Detail Spec. No.: 5611/006/05 B

Applications

Space applications

HiRel Silicon Bipolar Transistor -- BFY183 (P)

HiRel Microwave Transistor

Summary of Features

HiRel Discrete and Microwave Semiconductor
For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA.
Hermetically sealed microwave package
fT= 8 GHz
F = 2.3 dB at 2 GHz
Type Variant No. 05

Potential Applications

Quality level for Engineering Models

Applications

Space applications

HiRel Silicon Bipolar Transistor -- BFY193C (ES)

HiRel Microwave Transistor

Summary of Features

HiRel Discrete and Microwave Semiconductor
For low noise, high-gain amplifiers up to 2GHz.
For linear broadband amplifiers
Specified 1/f Noise
Hermetically sealed microwave package
fT= 8 GHz
F = 2.3 dB at 2 GHz
Type Variant No. 08

ESA Space Qualified ESA/SCC Detail Spec. No.: 5611/006/08 B

Applications

Space applications

HiRel Silicon Bipolar Transistor -- BFY193C (P)

HiRel Microwave Transistor

Summary of Features

HiRel Discrete and Microwave Semiconductor
For low noise, high-gain amplifiers up to 2GHz.
For linear broadband amplifiers
Specified 1/f Noise
Hermetically sealed microwave package
fT= 8 GHz
F = 2.3 dB at 2 GHz
Type Variant No. 08

Potential Applications

Quality level for Engineering Models

Applications

Space applications

HiRel Silicon Bipolar Transistor -- BFY196 (ES)

HiRel Microwave Transistor

Summary of Features

HiRel Discrete and Microwave Semiconductor
For low noise, high-gain amplifiers up to 2GHz.
For linear broadband amplifiers
Hermetically sealed microwave package
fT= 6,5 GHz
F = 3 dB at 2 GHz
Type Variant No. 07

ESA Space Qualified ESA/SCC Detail Spec. No.: 5611/006/07 B

Applications

Space applications

HiRel Silicon Bipolar Transistor -- BFY196 (P)

HiRel Microwave Transistor

Summary of Features

HiRel Discrete and Microwave Semiconductor
For low noise, high-gain amplifiers up to 2GHz.
For linear broadband amplifiers
Hermetically sealed microwave package
fT= 6,5 GHz
F = 3 dB at 2 GHz
Type Variant No. 07

Potential Applications

Quality level for Engineering Models

Applications

Space applications

HiRel Silicon Bipolar Transistor -- BFY405 (ES)

HiRel Microwave Transistor

Summary of Features

HiRel Discrete and Microwave Semiconductor
For Low Current Applications
For Oscillators up to 12 GHz
Noise Figure F = 1.15 dB at 1.8 GHz
Outstanding Gms = 23dB at 1.8 GHz
Hermetically sealed microwave package
Transition Frequency fT = 20 GHz
SIEGET® 25-Line Infineon Technologies Grounded Emitter Transistor-25 GHz fT-Line
Type Variant No. 01

ESA Space Qualified ESA/SCC Detail Spec. No.: 5611/008/01 B

Applications

Space applications

HiRel Silicon Bipolar Transistor -- BFY405 (P)

HiRel Microwave Transistor

Summary of Features

HiRel Discrete and Microwave Semiconductor
For Low Current Applications
For Oscillators up to 12 GHz
Noise Figure F = 1.15 dB at 1.8 GHz
Outstanding Gms = 23dB at 1.8 GHz
Hermetically sealed microwave package
Transition Frequency fT = 20 GHz
SIEGET® 25-Line Infineon Technologies Grounded Emitter Transistor -25 GHz fT-Line
Type Variant No. 01

Potential Applications

Quality level for Engineering Models

Applications

Space applications