Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7

650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

Summary of Features

• 650V technology with integrated fast body diode
• Limited voltage overshoot during hard commutation
• Significant Q_g reduction compared to 600V CFD technology
• Tighter R_DS(on) max to R_DS(on) typ window
• Easy to design-in
• Lower price compared to 600V CFD technology

Benefits

• Low switching losses due to low Q_rr at repetitive commutation on body diode
• Self limiting di/dt and dv/dt
• Low Q_oss
• Reduced turn on and turn of delay times
• Outstanding CoolMOS™ quality

Potential Applications

• Telecom
• Server
• Solar
• HID lamp ballast
• LED lighting
• eMobility

Applications

• 48 V intermediate bus converter (IBC)
• DIN rail power supplies
• Uninterruptible power supplies (UPS)

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview

Designers who used this product also designed with

• 1ED44173N01B |
  Gate driver ICs
• 2ED2110S06M |
  Gate driver ICs
• 2EDB8259Y |
  Gate driver ICs
• 2EDL23N06PJ |
  Gate driver ICs
• 1ED3124MU12F |
  Gate driver ICs
• 1ED44171N01B |
  Gate driver ICs
• 1ED44173N01B |
  Gate driver ICs
• 2ED2110S06M |
  Gate driver ICs
• 2EDB8259Y |
  Gate driver ICs
• 2EDL23N06PJ |
  Gate driver ICs
• 1ED3124MU12F |
  Gate driver ICs
• 1ED44171N01B |
  Gate driver ICs
• 1ED44173N01B |
  Gate driver ICs
• 2ED2110S06M |
  Gate driver ICs

1
2

Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.

Summary of Features

• Reduced gate charge (Q _g)
• Higher V _th
• Good body diode ruggedness
• Optimized integrated R _g
• Improved dv/dt from 50V/ns
• CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology

Benefits

• Improved effciency especially in light load condition
• Better efficiency in soft switching applications due to earlier turn-off
• Suitable for hard- & soft-switching topologies
• Optimized balance of efficiency and ease of use and good controllability of switching behavior
• High robustness and better efficiency
• Outstanding quality & reliability

Potential Applications

• PFC stages for server, telecom rectifier, PC silverbox, gaming consoles
• PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

Designers who used this product also designed with

• 2EDL05N06PF |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs
• 2EDL05N06PF |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs
• 2EDL05N06PF |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs

CoolMOS™ CP, Infineon's fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV.

Summary of Features

• Lowest figure of merit R _on x Q _g
• Ultra low gate charge
• Extreme dv/dt rate
• Ultra low R _DS(on), ultra low gate charge, very fast switching
• V _th 3 V, g _fs very high, internal R _g very low
• High current capability
• Significant reduction of conduction and switching losses
• High power density and efficiency for superior power conversion systems
• Best-in-class price/performance ratio

Potential Applications

• Solar
• Server
• Telecom
• Consumer
• Adapter
• PC power

Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.

Summary of Features

• Reduced gate charge (Q _g)
• Higher V _th
• Good body diode ruggedness
• Optimized integrated R _g
• Improved dv/dt from 50V/ns
• CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology

Benefits

• Improved effciency especially in light load condition
• Better efficiency in soft switching applications due to earlier turn-off
• Suitable for hard- & soft-switching topologies
• Optimized balance of efficiency and ease of use and good controllability of switching behavior
• High robustness and better efficiency
• Outstanding quality & reliability

Potential Applications

• PFC stages for server, telecom rectifier, PC silverbox, gaming consoles
• PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

Designers who used this product also designed with

• 2EDB8259Y |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs
• 2EDB8259Y |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs
• 2EDB8259Y |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs

500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Summary of Features

• Reduced energy stored in output capacitance (E _oss)
• High body diode ruggedness
• Reduced reverse recovery charge (Q _rr )
• Reduced gate charge (Q _g )

Benefits

• Easy control of switching behavior
• Better light load efficiency compared to previous CoolMOS™ generations
• Cost attractive alternative compared to standard MOSFETs
• Outstanding quality and reliability of CoolMOS™ technology

Potential Applications

• Consumer
• Lighting
• PC silverbox

Designers who used this product also designed with

• 1EDI20N12AF |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs
• 1EDI20N12AF |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs
• 1EDI20N12AF |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs

Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.

Summary of Features

• Reduced gate charge (Q _g)
• Higher V _th
• Good body diode ruggedness
• Optimized integrated R _g
• Improved dv/dt from 50V/ns
• CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology

Benefits

• Improved effciency especially in light load condition
• Better efficiency in soft switching applications due to earlier turn-off
• Suitable for hard- & soft-switching topologies
• Optimized balance of efficiency and ease of use and good controllability of switching behavior
• High robustness and better efficiency
• Outstanding quality & reliability

Potential Applications

• PFC stages for server, telecom rectifier, PC silverbox, gaming consoles
• PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

Designers who used this product also designed with

• 2ED2101S06F |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs
• 2ED2101S06F |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs
• 2ED2101S06F |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs

Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.

Summary of Features

• Reduced gate charge (Q _g)
• Higher V _th
• Good body diode ruggedness
• Optimized integrated R _g
• Improved dv/dt from 50V/ns
• CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology

Benefits

• Improved effciency especially in light load condition
• Better efficiency in soft switching applications due to earlier turn-off
• Suitable for hard- & soft-switching topologies
• Optimized balance of efficiency and ease of use and good controllability of switching behavior
• High robustness and better efficiency
• Outstanding quality & reliability

Potential Applications

• PFC stages for server, telecom rectifier, PC silverbox, gaming consoles
• PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

Applications

• Consumer electronics
• Cordless power tools and outdoor power equipment
• Domestic robots
• LED strips and signage

Designers who used this product also designed with

• 2EDB8259Y |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs
• 2EDB8259Y |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs
• 2EDB8259Y |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs

Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.

Summary of Features

• Reduced gate charge (Q _g)
• Higher V _th
• Good body diode ruggedness
• Optimized integrated R _g
• Improved dv/dt from 50V/ns
• CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology

Benefits

• Improved effciency especially in light load condition
• Better efficiency in soft switching applications due to earlier turn-off
• Suitable for hard- & soft-switching topologies
• Optimized balance of efficiency and ease of use and good controllability of switching behavior
• High robustness and better efficiency
• Outstanding quality & reliability

Potential Applications

• PFC stages for server, telecom rectifier, PC silverbox, gaming consoles
• PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

Applications

• Edge computing

Designers who used this product also designed with

• 1EDB8275F |
  Gate driver ICs
• 2EDB8259Y |
  Gate driver ICs
• 1EDB8275F |
  Gate driver ICs
• 2EDB8259Y |
  Gate driver ICs
• 1EDB8275F |
  Gate driver ICs
• 2EDB8259Y |
  Gate driver ICs

Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.

Summary of Features

• Reduced gate charge (Q _g)
• Higher V _th
• Good body diode ruggedness
• Optimized integrated R _g
• Improved dv/dt from 50V/ns
• CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology

Benefits

• Improved effciency especially in light load condition
• Better efficiency in soft switching applications due to earlier turn-off
• Suitable for hard- & soft-switching topologies
• Optimized balance of efficiency and ease of use and good controllability of switching behavior
• High robustness and better efficiency
• Outstanding quality & reliability

Potential Applications

• PFC stages for server, telecom rectifier, PC silverbox, gaming consoles
• PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

Applications

• 48 V intermediate bus converter (IBC)

Designers who used this product also designed with

• 2ED2106S06F |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs
• 2ED2106S06F |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs
• 2ED2106S06F |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest R_DS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Summary of Features

• 650V voltage
• Revolutionary best-in-class R _DS(on)/package
• Reduced energy stored in output capacitance (Eoss)
• Lower gate charge Q_g
• Space saving through use of smaller packages or reduction of parts
• 12 years manufacturing experience in superjunction technology

Benefits

• Improved safety margin and suitable for both SMPS and solar inverter applications
• Lowest conduction losses/package
• Low switching losses
• Better light load efficiency
• Increasing power density
• Outstanding CoolMOS™ quality

Potential Applications

• Telecom
• Server
• Solar
• PC power

Applications

• Automotive secondary power distribution unit
• Information & communications technology
• Light electric vehicles (LEV)

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview

Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.

Summary of Features

• Reduced gate charge (Q _g)
• Higher V _th
• Good body diode ruggedness
• Optimized integrated R _g
• Improved dv/dt from 50V/ns
• CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology

Benefits

• Improved effciency especially in light load condition
• Better efficiency in soft switching applications due to earlier turn-off
• Suitable for hard- & soft-switching topologies
• Optimized balance of efficiency and ease of use and good controllability of switching behavior
• High robustness and better efficiency
• Outstanding quality & reliability

Potential Applications

• PFC stages for server, telecom rectifier, PC silverbox, gaming consoles
• PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

Applications

• 1-phase string inverter solutions
• Semiconductor solutions for home entertainment applications

Designers who used this product also designed with

• 1EDB8275F |
  Gate driver ICs
• IRS4427S |
  Gate driver ICs
• 1EDB8275F |
  Gate driver ICs
• IRS4427S |
  Gate driver ICs
• 1EDB8275F |
  Gate driver ICs
• IRS4427S |
  Gate driver ICs

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest R_DS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Summary of Features

• 650V voltage
• Revolutionary best-in-class R _DS(on)/package
• Reduced energy stored in output capacitance (Eoss)
• Lower gate charge Q_g
• Space saving through use of smaller packages or reduction of parts
• 12 years manufacturing experience in superjunction technology

Benefits

• Improved safety margin and suitable for both SMPS and solar inverter applications
• Lowest conduction losses/package
• Low switching losses
• Better light load efficiency
• Increasing power density
• Outstanding CoolMOS™ quality

Potential Applications

• Telecom
• Server
• Solar
• PC power

Applications

• 48 V intermediate bus converter (IBC)
• DIN rail power supplies

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview

Designers who used this product also designed with

• BSC040N10NS5 |
  N-Channel Power MOSFET
• ISC060N10NM6 |
  N-Channel Power MOSFET
• BSC040N10NS5 |
  N-Channel Power MOSFET
• ISC060N10NM6 |
  N-Channel Power MOSFET
• BSC040N10NS5 |
  N-Channel Power MOSFET
• ISC060N10NM6 |
  N-Channel Power MOSFET

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7

650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

Summary of Features

• 650V technology with integrated fast body diode
• Limited voltage overshoot during hard commutation
• Significant Q_g reduction compared to 600V CFD technology
• Tighter R_DS(on) max to R_DS(on) typ window
• Easy to design-in
• Lower price compared to 600V CFD technology

Benefits

• Low switching losses due to low Q_rr at repetitive commutation on body diode
• Self limiting di/dt and dv/dt
• Low Q_oss
• Reduced turn on and turn of delay times
• Outstanding CoolMOS™ quality

Potential Applications

• Telecom
• Server
• Solar
• HID lamp ballast
• LED lighting
• eMobility

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest R_DS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Summary of Features

• 650V voltage
• Revolutionary best-in-class R _DS(on)/package
• Reduced energy stored in output capacitance (Eoss)
• Lower gate charge Q_g
• Space saving through use of smaller packages or reduction of parts
• 12 years manufacturing experience in superjunction technology

Benefits

• Improved safety margin and suitable for both SMPS and solar inverter applications
• Lowest conduction losses/package
• Low switching losses
• Better light load efficiency
• Increasing power density
• Outstanding CoolMOS™ quality

Potential Applications

• Telecom
• Server
• Solar
• PC power

Applications

• DIN rail power supplies
• Servo motor drive and control

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview

Designers who used this product also designed with

• ICE5QR2280BG |
  CoolSET™ Quasi Resonant
• ISC022N10NM6 |
  N-Channel Power MOSFET
• ICE5QR2280BG |
  CoolSET™ Quasi Resonant
• ISC022N10NM6 |
  N-Channel Power MOSFET
• ICE5QR2280BG |
  CoolSET™ Quasi Resonant
• ISC022N10NM6 |
  N-Channel Power MOSFET

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7

650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

Summary of Features

• 650V technology with integrated fast body diode
• Limited voltage overshoot during hard commutation
• Significant Q_g reduction compared to 600V CFD technology
• Tighter R_DS(on) max to R_DS(on) typ window
• Easy to design-in
• Lower price compared to 600V CFD technology

Benefits

• Low switching losses due to low Q_rr at repetitive commutation on body diode
• Self limiting di/dt and dv/dt
• Low Q_oss
• Reduced turn on and turn of delay times
• Outstanding CoolMOS™ quality

Potential Applications

• Telecom
• Server
• Solar
• HID lamp ballast
• LED lighting
• eMobility

Designers who used this product also designed with

• 2EDB8259Y |
  Gate driver ICs
• IRS4427S |
  Gate driver ICs
• 2ED2110S06M |
  Gate driver ICs
• 2EDL23N06PJ |
  Gate driver ICs
• 1EDI20I12MF |
  Gate driver ICs
• 1EDN8511B |
  Gate driver ICs
• 2EDB8259Y |
  Gate driver ICs
• IRS4427S |
  Gate driver ICs
• 2ED2110S06M |
  Gate driver ICs
• 2EDL23N06PJ |
  Gate driver ICs
• 1EDI20I12MF |
  Gate driver ICs
• 1EDN8511B |
  Gate driver ICs
• 2EDB8259Y |
  Gate driver ICs
• IRS4427S |
  Gate driver ICs

1
2

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7

650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

Summary of Features

• 650V technology with integrated fast body diode
• Limited voltage overshoot during hard commutation
• Significant Q_g reduction compared to 600V CFD technology
• Tighter R_DS(on) max to R_DS(on) typ window
• Easy to design-in
• Lower price compared to 600V CFD technology

Benefits

• Low switching losses due to low Q_rr at repetitive commutation on body diode
• Self limiting di/dt and dv/dt
• Low Q_oss
• Reduced turn on and turn of delay times
• Outstanding CoolMOS™ quality

Potential Applications

• Telecom
• Server
• Solar
• HID lamp ballast
• LED lighting
• eMobility

Applications

• Smart buildings

Designers who used this product also designed with

• 1ED44173N01B |
  Gate driver ICs
• 1EDI20I12MF |
  Gate driver ICs
• 2EDL23N06PJ |
  Gate driver ICs
• 6EDL04N06PT |
  Gate driver ICs
• 1EDN8511B |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs
• 1ED44173N01B |
  Gate driver ICs
• 1EDI20I12MF |
  Gate driver ICs
• 2EDL23N06PJ |
  Gate driver ICs
• 6EDL04N06PT |
  Gate driver ICs
• 1EDN8511B |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs
• 1ED44173N01B |
  Gate driver ICs
• 1EDI20I12MF |
  Gate driver ICs

1
2

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest R_DS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Summary of Features

• 650V voltage
• Revolutionary best-in-class R _DS(on)/package
• Reduced energy stored in output capacitance (Eoss)
• Lower gate charge Q_g
• Space saving through use of smaller packages or reduction of parts
• 12 years manufacturing experience in superjunction technology

Benefits

• Improved safety margin and suitable for both SMPS and solar inverter applications
• Lowest conduction losses/package
• Low switching losses
• Better light load efficiency
• Increasing power density
• Outstanding CoolMOS™ quality

Potential Applications

• Telecom
• Server
• Solar
• PC power

Applications

• Programmable logic controller (PLC)
• Telecommunication infrastructure

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest R_DS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Summary of Features

• 650V voltage
• Revolutionary best-in-class R _DS(on)/package
• Reduced energy stored in output capacitance (Eoss)
• Lower gate charge Q_g
• Space saving through use of smaller packages or reduction of parts
• 12 years manufacturing experience in superjunction technology

Benefits

• Improved safety margin and suitable for both SMPS and solar inverter applications
• Lowest conduction losses/package
• Low switching losses
• Better light load efficiency
• Increasing power density
• Outstanding CoolMOS™ quality

Potential Applications

• Telecom
• Server
• Solar
• PC power

Applications

• Adapters and chargers

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview

Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.

Summary of Features

• Reduced gate charge (Q _g)
• Higher V _th
• Good body diode ruggedness
• Optimized integrated R _g
• Improved dv/dt from 50V/ns
• CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology

Benefits

• Improved effciency especially in light load condition
• Better efficiency in soft switching applications due to earlier turn-off
• Suitable for hard- & soft-switching topologies
• Optimized balance of efficiency and ease of use and good controllability of switching behavior
• High robustness and better efficiency
• Outstanding quality & reliability

Potential Applications

• PFC stages for server, telecom rectifier, PC silverbox, gaming consoles
• PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

Applications

• 48 V intermediate bus converter (IBC)

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview

Designers who used this product also designed with

• 2EDL05N06PF |
  Gate driver ICs
• IRS4427S |
  Gate driver ICs
• 2EDL05N06PF |
  Gate driver ICs
• IRS4427S |
  Gate driver ICs
• 2EDL05N06PF |
  Gate driver ICs
• IRS4427S |
  Gate driver ICs

Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.

Summary of Features

• Reduced gate charge (Q _g)
• Higher V _th
• Good body diode ruggedness
• Optimized integrated R _g
• Improved dv/dt from 50V/ns
• CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology

Benefits

• Improved effciency especially in light load condition
• Better efficiency in soft switching applications due to earlier turn-off
• Suitable for hard- & soft-switching topologies
• Optimized balance of efficiency and ease of use and good controllability of switching behavior
• High robustness and better efficiency
• Outstanding quality & reliability

Potential Applications

• PFC stages for server, telecom rectifier, PC silverbox, gaming consoles
• PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

Applications

• Automotive
• Light electric vehicles (LEV)

Designers who used this product also designed with

• 2EDL05N06PF |
  Gate driver ICs
• 1EDN8511B |
  Gate driver ICs
• 2EDL05N06PF |
  Gate driver ICs
• 1EDN8511B |
  Gate driver ICs
• 2EDL05N06PF |
  Gate driver ICs
• 1EDN8511B |
  Gate driver ICs

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest R_DS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Summary of Features

• 650V voltage
• Revolutionary best-in-class R _DS(on)/package
• Reduced energy stored in output capacitance (Eoss)
• Lower gate charge Q_g
• Space saving through use of smaller packages or reduction of parts
• 12 years manufacturing experience in superjunction technology

Benefits

• Improved safety margin and suitable for both SMPS and solar inverter applications
• Lowest conduction losses/package
• Low switching losses
• Better light load efficiency
• Increasing power density
• Outstanding CoolMOS™ quality

Potential Applications

• Telecom
• Server
• Solar
• PC power

Applications

• Connected and smart lighting for IoT
• DIN rail power supplies

Designers who used this product also designed with

• IRLML5103 |
  P-Channel Power MOSFET
• IPP045N10N3 G |
  N-Channel Power MOSFET
• IRLML5103 |
  P-Channel Power MOSFET
• IPP045N10N3 G |
  N-Channel Power MOSFET
• IRLML5103 |
  P-Channel Power MOSFET
• IPP045N10N3 G |
  N-Channel Power MOSFET

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest R_DS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Summary of Features

• 650V voltage
• Revolutionary best-in-class R _DS(on)/package
• Reduced energy stored in output capacitance (Eoss)
• Lower gate charge Q_g
• Space saving through use of smaller packages or reduction of parts
• 12 years manufacturing experience in superjunction technology

Benefits

• Improved safety margin and suitable for both SMPS and solar inverter applications
• Lowest conduction losses/package
• Low switching losses
• Better light load efficiency
• Increasing power density
• Outstanding CoolMOS™ quality

Potential Applications

• Telecom
• Server
• Solar
• PC power

Applications

• 48 V intermediate bus converter (IBC)
• DIN rail power supplies
• LED strips and signage

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview

Designers who used this product also designed with

• IDH08G65C5 |
  CoolSiC™ Schottky Diodes
• BSS169 |
  N-Channel Depletion Mode MOSFET
• IDH08G65C5 |
  CoolSiC™ Schottky Diodes
• BSS169 |
  N-Channel Depletion Mode MOSFET
• IDH08G65C5 |
  CoolSiC™ Schottky Diodes
• BSS169 |
  N-Channel Depletion Mode MOSFET

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest R_DS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Summary of Features

• 650V voltage
• Revolutionary best-in-class R _DS(on)/package
• Reduced energy stored in output capacitance (Eoss)
• Lower gate charge Q_g
• Space saving through use of smaller packages or reduction of parts
• 12 years manufacturing experience in superjunction technology

Benefits

• Improved safety margin and suitable for both SMPS and solar inverter applications
• Lowest conduction losses/package
• Low switching losses
• Better light load efficiency
• Increasing power density
• Outstanding CoolMOS™ quality

Potential Applications

• Telecom
• Server
• Solar
• PC power

Applications

• 48 V intermediate bus converter (IBC)
• Offline UPS - high frequency transformers
• Uninterruptible power supplies (UPS)

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview

Designers who used this product also designed with

• IMZA65R072M1H |
  Silicon Carbide MOSFET Discretes
• 1EDN7512B |
  Gate driver ICs
• IMZA65R072M1H |
  Silicon Carbide MOSFET Discretes
• 1EDN7512B |
  Gate driver ICs
• IMZA65R072M1H |
  Silicon Carbide MOSFET Discretes
• 1EDN7512B |
  Gate driver ICs

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7

650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

Summary of Features

• 650V technology with integrated fast body diode
• Limited voltage overshoot during hard commutation
• Significant Q_g reduction compared to 600V CFD technology
• Tighter R_DS(on) max to R_DS(on) typ window
• Easy to design-in
• Lower price compared to 600V CFD technology

Benefits

• Low switching losses due to low Q_rr at repetitive commutation on body diode
• Self limiting di/dt and dv/dt
• Low Q_oss
• Reduced turn on and turn of delay times
• Outstanding CoolMOS™ quality

Potential Applications

• Telecom
• Server
• Solar
• HID lamp ballast
• LED lighting
• eMobility

Applications

• DIN rail power supplies

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview

Designers who used this product also designed with

• 1EDI20N12AF |
  Gate driver ICs
• 2ED2184S06F |
  Gate driver ICs
• 2EDB8259Y |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs
• IRS4427S |
  Gate driver ICs
• 1EDI20I12MF |
  Gate driver ICs
• 1EDI20N12AF |
  Gate driver ICs
• 2ED2184S06F |
  Gate driver ICs
• 2EDB8259Y |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs
• IRS4427S |
  Gate driver ICs
• 1EDI20I12MF |
  Gate driver ICs
• 1EDI20N12AF |
  Gate driver ICs
• 2ED2184S06F |
  Gate driver ICs

1
2

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest R_DS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Summary of Features

• 650V voltage
• Revolutionary best-in-class R _DS(on)/package
• Reduced energy stored in output capacitance (Eoss)
• Lower gate charge Q_g
• Space saving through use of smaller packages or reduction of parts
• 12 years manufacturing experience in superjunction technology

Benefits

• Improved safety margin and suitable for both SMPS and solar inverter applications
• Lowest conduction losses/package
• Low switching losses
• Better light load efficiency
• Increasing power density
• Outstanding CoolMOS™ quality

Potential Applications

• Telecom
• Server
• Solar
• PC power

Applications

• 48 V intermediate bus converter (IBC)
• DIN rail power supplies
• EV charging
• On-board charging (OBC) for electric vehicles

Designers who used this product also designed with

• 1EDB7275F |
  Gate driver ICs
• 1ED3124MU12F |
  Gate driver ICs
• 1ED44173N01B |
  Gate driver ICs
• 1EDN8511B |
  Gate driver ICs
• BSC012N06NS |
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• IMBG65R057M1H |
  Silicon Carbide MOSFET Discretes
• IMBG65R022M1H |
  Silicon Carbide MOSFET Discretes
• ICE2QR2280G |
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• 1EDB7275F |
  Gate driver ICs
• 1ED3124MU12F |
  Gate driver ICs
• 1ED44173N01B |
  Gate driver ICs
• 1EDN8511B |
  Gate driver ICs
• BSC012N06NS |
  N-Channel Power MOSFET
• IMBG65R057M1H |
  Silicon Carbide MOSFET Discretes
• IMBG65R022M1H |
  Silicon Carbide MOSFET Discretes
• ICE2QR2280G |
  CoolSET™ Quasi Resonant

1
2

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest R_DS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Summary of Features

• 650V voltage
• Revolutionary best-in-class R _DS(on)/package
• Reduced energy stored in output capacitance (Eoss)
• Lower gate charge Q_g
• Space saving through use of smaller packages or reduction of parts
• 12 years manufacturing experience in superjunction technology

Benefits

• Improved safety margin and suitable for both SMPS and solar inverter applications
• Lowest conduction losses/package
• Low switching losses
• Better light load efficiency
• Increasing power density
• Outstanding CoolMOS™ quality

Potential Applications

• Telecom
• Server
• Solar
• PC power

Applications

• 48 V intermediate bus converter (IBC)
• DIN rail power supplies
• Refrigerators and freezers
• Solutions for inductive wireless charging above 50 W

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview

Designers who used this product also designed with

• BSC010N04LS6 |
  N-Channel Power MOSFET
• 1EDN8511B |
  Gate driver ICs
• 2EDB8259Y |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs
• IDH10G65C6 |
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• 2EDN7524G |
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• BSC010N04LS |
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• ICE2QR2280G-1 |
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• BSC010N04LS6 |
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• 1EDN8511B |
  Gate driver ICs
• 2EDB8259Y |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs
• IDH10G65C6 |
  CoolSiC™ Schottky Diodes
• 2EDN7524G |
  Gate driver ICs
• BSC010N04LS |
  N-Channel Power MOSFET
• ICE2QR2280G-1 |
  CoolSET™ Quasi Resonant

1
2

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest R_DS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Summary of Features

• 650V voltage
• Revolutionary best-in-class R _DS(on)/package
• Reduced energy stored in output capacitance (Eoss)
• Lower gate charge Q_g
• Space saving through use of smaller packages or reduction of parts
• 12 years manufacturing experience in superjunction technology

Benefits

• Improved safety margin and suitable for both SMPS and solar inverter applications
• Lowest conduction losses/package
• Low switching losses
• Better light load efficiency
• Increasing power density
• Outstanding CoolMOS™ quality

Potential Applications

• Telecom
• Server
• Solar
• PC power

Applications

• 48 V intermediate bus converter (IBC)
• EV charging

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview

Designers who used this product also designed with

• IDH10G65C5 |
  CoolSiC™ Schottky Diodes
• IMBG120R234M2H |
  Silicon Carbide MOSFET Discretes
• IDH10G65C5 |
  CoolSiC™ Schottky Diodes
• IMBG120R234M2H |
  Silicon Carbide MOSFET Discretes
• IDH10G65C5 |
  CoolSiC™ Schottky Diodes
• IMBG120R234M2H |
  Silicon Carbide MOSFET Discretes

500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Summary of Features

• Reduced energy stored in output capacitance (E _oss)
• High body diode ruggedness
• Reduced reverse recovery charge (Q _rr )
• Reduced gate charge (Q _g )

Benefits

• Easy control of switching behavior
• Better light load efficiency compared to previous CoolMOS™ generations
• Cost attractive alternative compared to standard MOSFETs
• Outstanding quality and reliability of CoolMOS™ technology

Potential Applications

• Consumer
• Lighting
• PC silverbox

Applications

• Medium voltage (MV) drive

Designers who used this product also designed with

• 1EDI20N12AF |
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• 1EDN8511B |
  Gate driver ICs
• 1EDI20N12AF |
  Gate driver ICs
• 1EDN8511B |
  Gate driver ICs
• 1EDI20N12AF |
  Gate driver ICs
• 1EDN8511B |
  Gate driver ICs

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7

650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

Summary of Features

• 650V technology with integrated fast body diode
• Limited voltage overshoot during hard commutation
• Significant Q_g reduction compared to 600V CFD technology
• Tighter R_DS(on) max to R_DS(on) typ window
• Easy to design-in
• Lower price compared to 600V CFD technology

Benefits

• Low switching losses due to low Q_rr at repetitive commutation on body diode
• Self limiting di/dt and dv/dt
• Low Q_oss
• Reduced turn on and turn of delay times
• Outstanding CoolMOS™ quality

Potential Applications

• Telecom
• Server
• Solar
• HID lamp ballast
• LED lighting
• eMobility

Applications

• Power optimizer solutions

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview

Designers who used this product also designed with

• 1ED44171N01B |
  Gate driver ICs
• 2EDB8259Y |
  Gate driver ICs
• 2EDL23N06PJ |
  Gate driver ICs
• 6EDL04N06PT |
  Gate driver ICs
• 2ED2110S06M |
  Gate driver ICs
• 2ED2184S06F |
  Gate driver ICs
• 1ED44171N01B |
  Gate driver ICs
• 2EDB8259Y |
  Gate driver ICs
• 2EDL23N06PJ |
  Gate driver ICs
• 6EDL04N06PT |
  Gate driver ICs
• 2ED2110S06M |
  Gate driver ICs
• 2ED2184S06F |
  Gate driver ICs
• 1ED44171N01B |
  Gate driver ICs
• 2EDB8259Y |
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1
2

A new benchmark in efficiency and thermal performance

800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.

This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R _DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.

Summary of Features

• Best-in-class FOM R _DS(on) * E _oss; reduced Q_g, C _iss and C _oss
• Best-in-class DPAK R _DS(on) of 280mΩ
• Best-in-class V _(GS)th of 3V and smallest V _(GS)th variation of ± 0.5V
• Integrated Zener diode ESD protection up to Class 2 (HBM)
• Best-in-class quality and reliability
• Fully optimized portfolio

Benefits

• 0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3
• Enabling higher power density designs, BOM savings and lower assembly cost
• Easy to drive and to design-in
• Better production yield by reducing ESD related failures
• Less production issues and reduced field returns
• Easy to select right parts for fine tuning of designs

Potential Applications

• Adapter
• LED
• Audio
• Industrial SMPS
• AUX power

Designers who used this product also designed with

• ILD6150 |
  DC-DC LED Driver IC
• XMC1301-T038X0064 AB |
  32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0
• ILD6150 |
  DC-DC LED Driver IC
• XMC1301-T038X0064 AB |
  32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0
• ILD6150 |
  DC-DC LED Driver IC
• XMC1301-T038X0064 AB |
  32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7

650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

Summary of Features

• 650V technology with integrated fast body diode
• Limited voltage overshoot during hard commutation
• Significant Q_g reduction compared to 600V CFD technology
• Tighter R_DS(on) max to R_DS(on) typ window
• Easy to design-in
• Lower price compared to 600V CFD technology

Benefits

• Low switching losses due to low Q_rr at repetitive commutation on body diode
• Self limiting di/dt and dv/dt
• Low Q_oss
• Reduced turn on and turn of delay times
• Outstanding CoolMOS™ quality

Potential Applications

• Telecom
• Server
• Solar
• HID lamp ballast
• LED lighting
• eMobility

Applications

• DIN rail power supplies
• Uninterruptible power supplies (UPS)

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview

Designers who used this product also designed with

• 1ED44171N01B |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs
• 6EDL04N06PT |
  Gate driver ICs
• IRS4427S |
  Gate driver ICs
• 2ED2110S06M |
  Gate driver ICs
• 1EDI20I12MF |
  Gate driver ICs
• 1ED44171N01B |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs
• 6EDL04N06PT |
  Gate driver ICs
• IRS4427S |
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• 2ED2110S06M |
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• 1EDI20I12MF |
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• 1ED44171N01B |
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• 2EDR8259X |
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1
2

CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies

The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E _oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.

Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.

Summary of Features

• Reduced switching loss parameters such as Q _G, C _oss, E _oss
• Best-in-class figure of merit Q _G*R _DS(on)
• Increased switching frequency
• Best R _(on)*A in the world
• Rugged body diode

Benefits

• Enables increasing switching frequency without loss in efficiency
• Measure showing key parameter for light load and full load efficiency
• Doubling the switching frequency will half the size of magnetic components
• Smaller packages for same R _DS(on)
• Can be used in many more positions for both hard and soft switching topologies

Potential Applications

• Server
• Telecom
• PC power
• Solar
• Industrial
• USB-PD

Applications

• 48 V intermediate bus converter (IBC)
• Adapters and chargers
• Multicopters and drones
• Smart speaker designs

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview

Designers who used this product also designed with

• 1EDI20I12MF |
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• 2ED2184S06F |
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• IRS4427S |
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• 1ED44173N01B |
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• 2EDS8265H |
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• 1EDN7550B |
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• BAS70-05W |
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• ICE2QR2280G-1 |
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• 2EDN7524R |
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• BSC040N10NS5 |
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• 2EDN7524G |
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• 2EDF7275F |
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• 1EDN7511B |
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• BSC025N08LS5 |
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• BSZ110N08NS5 |
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• IDH20G65C6 |
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• IDL06G65C5 |
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• 1EDN8511B |
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• 1ED3120MC12H |
  Gate driver ICs
• 1EDB8275F |
  Gate driver ICs
• 1EDI20I12MF |
  Gate driver ICs
• 2ED2184S06F |
  Gate driver ICs
• IRS4427S |
  Gate driver ICs
• 1ED44173N01B |
  Gate driver ICs
• 2EDS8265H |
  Gate driver ICs
• 1EDN7550B |
  Gate driver ICs
• BAS70-05W |
  Schottky Diodes
• ICE2QR2280G-1 |
  CoolSET™ Quasi Resonant

1
2
3
4
5

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest R_DS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Summary of Features

• 650V voltage
• Revolutionary best-in-class R _DS(on)/package
• Reduced energy stored in output capacitance (Eoss)
• Lower gate charge Q_g
• Space saving through use of smaller packages or reduction of parts
• 12 years manufacturing experience in superjunction technology

Benefits

• Improved safety margin and suitable for both SMPS and solar inverter applications
• Lowest conduction losses/package
• Low switching losses
• Better light load efficiency
• Increasing power density
• Outstanding CoolMOS™ quality

Potential Applications

• Telecom
• Server
• Solar
• PC power

Applications

• 48 V intermediate bus converter (IBC)
• DIN rail power supplies
• Refrigerators and freezers
• Uninterruptible power supplies (UPS)

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview

Designers who used this product also designed with

• 2EDL05N06PF |
  Gate driver ICs
• BSO301SP H |
  P-Channel Power MOSFET
• 2EDL05N06PF |
  Gate driver ICs
• BSO301SP H |
  P-Channel Power MOSFET
• 2EDL05N06PF |
  Gate driver ICs
• BSO301SP H |
  P-Channel Power MOSFET

500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Summary of Features

• Reduced energy stored in output capacitance (E _oss)
• High body diode ruggedness
• Reduced reverse recovery charge (Q _rr )
• Reduced gate charge (Q _g )

Benefits

• Easy control of switching behavior
• Better light load efficiency compared to previous CoolMOS™ generations
• Cost attractive alternative compared to standard MOSFETs
• Outstanding quality and reliability of CoolMOS™ technology

Potential Applications

• Consumer
• Lighting
• PC silverbox

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R_onxA and the inherently low gate charge (Q_G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Summary of Features

Efficiency

• 600V P7 enables excellent FOM R_DS(on)xE_oss and R_DS(on)xQ_G

Ease-of-use

• ESD ruggedness of ≥ 2kV (HBM class 2)
• Integrated gate resistor R_G
• Rugged body diode
• Wide portfolio in through hole and surface mount packages
• Both standard grade and industrial grade parts are available

Benefits

Efficiency

• Excellent FOMs R_DS(on)xQ_G / R_DS(on)xE_oss enable higher efficiency

Ease-of-use

• Ease-of-use in manufacturing environments by stopping ESD failures occurring
• Integrated R_G reduces MOSFET oscillation sensitivity
• MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
• Excellent ruggedness during hard commutation of the body diode seen in LLC topology
• Suitable for a wide variety of end applications and output powers
• Parts available suitable for consumer and industrial applications

Potential Applications

• TV power supply
• Industrial SMPS
• Server
• Telecom
• Lighting

Applications

• Complete system solutions for smart TVs
• Edge computing
• LED strips and signage
• Washing and drying

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview

Designers who used this product also designed with

• 1EDI20N12AF |
  Gate driver ICs
• 2ED2110S06M |
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• 2EDL23N06PJ |
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• 2EDR8259X |
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• IPA083N10N5 |
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• ICE3PCS03G |
  PFC-CCM (continuous conduction mode) ICs
• IRS4427S |
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• 1ED44171N01B |
  Gate driver ICs
• 1ED44173N01B |
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• 1EDB8275F |
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• 1EDI20N12AF |
  Gate driver ICs
• 2ED2110S06M |
  Gate driver ICs
• 2EDL23N06PJ |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs
• IPA083N10N5 |
  N-Channel Power MOSFET
• ICE3PCS03G |
  PFC-CCM (continuous conduction mode) ICs
• IRS4427S |
  Gate driver ICs
• 1ED44171N01B |
  Gate driver ICs

1
2
3

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R_onxA and the inherently low gate charge (Q_G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Summary of Features

Efficiency

• 600V P7 enables excellent FOM R_DS(on)xE_oss and R_DS(on)xQ_G

Ease-of-use

• ESD ruggedness of ≥ 2kV (HBM class 2)
• Integrated gate resistor R_G
• Rugged body diode
• Wide portfolio in through hole and surface mount packages
• Both standard grade and industrial grade parts are available

Benefits

Efficiency

• Excellent FOMs R_DS(on)xQ_G / R_DS(on)xE_oss enable higher efficiency

Ease-of-use

• Ease-of-use in manufacturing environments by stopping ESD failures occurring
• Integrated R_G reduces MOSFET oscillation sensitivity
• MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
• Excellent ruggedness during hard commutation of the body diode seen in LLC topology
• Suitable for a wide variety of end applications and output powers
• Parts available suitable for consumer and industrial applications

Potential Applications

• TV power supply
• Industrial SMPS
• Server
• Telecom
• Lighting

Applications

• Adapters and chargers
• Cordless power tools and outdoor power equipment
• Edge computing
• LED lighting system designs
• LED strips and signage

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview

Designers who used this product also designed with

• 1ED44171N01B |
  Gate driver ICs
• 2ED2110S06M |
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• 2ED2184S06F |
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• 2EDB8259Y |
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• 2EDR8259X |
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• IRS4427S |
  Gate driver ICs
• 1ED44171N01B |
  Gate driver ICs
• 2ED2110S06M |
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• 2ED2184S06F |
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• 2EDB8259Y |
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• 2EDR8259X |
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• IRS4427S |
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• 1ED44171N01B |
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• 2ED2110S06M |
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1
2

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R_onxA and the inherently low gate charge (Q_G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Summary of Features

Efficiency

• 600V P7 enables excellent FOM R_DS(on)xE_oss and R_DS(on)xQ_G

Ease-of-use

• ESD ruggedness of ≥ 2kV (HBM class 2)
• Integrated gate resistor R_G
• Rugged body diode
• Wide portfolio in through hole and surface mount packages
• Both standard grade and industrial grade parts are available

Benefits

Efficiency

• Excellent FOMs R_DS(on)xQ_G / R_DS(on)xE_oss enable higher efficiency

Ease-of-use

• Ease-of-use in manufacturing environments by stopping ESD failures occurring
• Integrated R_G reduces MOSFET oscillation sensitivity
• MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
• Excellent ruggedness during hard commutation of the body diode seen in LLC topology
• Suitable for a wide variety of end applications and output powers
• Parts available suitable for consumer and industrial applications

Potential Applications

• TV power supply
• Industrial SMPS
• Server
• Telecom
• Lighting

Applications

• Complete system solutions for smart TVs
• Consumer electronics
• DIN rail power supplies
• LED lighting system designs
• LED strips and signage

Designers who used this product also designed with

• 2EDB8259Y |
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• 1ED44171N01B |
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• 2EDR8259X |
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• IPA083N10N5 |
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• ICE2PCS01G |
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• 1EDB8275F |
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• 2EDR8259X |
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• IPA083N10N5 |
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• ICE2PCS01G |
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• 1ED3120MC12H |
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• 1EDI20I12MF |
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1
2
3

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R_onxA and the inherently low gate charge (Q_G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Summary of Features

Efficiency

• 600V P7 enables excellent FOM R_DS(on)xE_oss and R_DS(on)xQ_G

Ease-of-use

• ESD ruggedness of ≥ 2kV (HBM class 2)
• Integrated gate resistor R_G
• Rugged body diode
• Wide portfolio in through hole and surface mount packages
• Both standard grade and industrial grade parts are available

Benefits

Efficiency

• Excellent FOMs R_DS(on)xQ_G / R_DS(on)xE_oss enable higher efficiency

Ease-of-use

• Ease-of-use in manufacturing environments by stopping ESD failures occurring
• Integrated R_G reduces MOSFET oscillation sensitivity
• MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
• Excellent ruggedness during hard commutation of the body diode seen in LLC topology
• Suitable for a wide variety of end applications and output powers
• Parts available suitable for consumer and industrial applications

Potential Applications

• TV power supply
• Industrial SMPS
• Server
• Telecom
• Lighting

Applications

• Complete system solutions for smart TVs
• Edge computing
• EV charging
• LED lighting system designs
• LED strips and signage

Designers who used this product also designed with

• 1EDN8511B |
  Gate driver ICs
• 2ED2110S06M |
  Gate driver ICs
• 2EDB8259Y |
  Gate driver ICs
• 2EDL23N06PJ |
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• ICE2PCS01G |
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• IRS4427S |
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• 1ED44173N01B |
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• 1EDB8275F |
  Gate driver ICs
• 1EDN8511B |
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• 2ED2110S06M |
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• 2EDB8259Y |
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• 2EDL23N06PJ |
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• ICE2PCS01G |
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• IRS4427S |
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• 1ED44173N01B |
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• 1EDB8275F |
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1
2

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R_onxA and the inherently low gate charge (Q_G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Summary of Features

Efficiency

• 600V P7 enables excellent FOM R_DS(on)xE_oss and R_DS(on)xQ_G

Ease-of-use

• ESD ruggedness of ≥ 2kV (HBM class 2)
• Integrated gate resistor R_G
• Rugged body diode
• Wide portfolio in through hole and surface mount packages
• Both standard grade and industrial grade parts are available

Benefits

Efficiency

• Excellent FOMs R_DS(on)xQ_G / R_DS(on)xE_oss enable higher efficiency

Ease-of-use

• Ease-of-use in manufacturing environments by stopping ESD failures occurring
• Integrated R_G reduces MOSFET oscillation sensitivity
• MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
• Excellent ruggedness during hard commutation of the body diode seen in LLC topology
• Suitable for a wide variety of end applications and output powers
• Parts available suitable for consumer and industrial applications

Potential Applications

• TV power supply
• Industrial SMPS
• Server
• Telecom
• Lighting

Applications

• Complete system solutions for smart TVs
• Edge computing
• LED strips and signage
• On-board charging (OBC) for electric vehicles

Designers who used this product also designed with

• IRS4427S |
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• 1ED44171N01B |
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• 1ED44173N01B |
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• 1EDI20I12MF |
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• 2ED2110S06M |
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• IRS4427S |
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• 2ED2110S06M |
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• IRS4427S |
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1
2

A new benchmark in efficiency and thermal performance

800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.

This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R _DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.

Summary of Features

• Best-in-class FOM R _DS(on) * E _oss; reduced Q_g, C _iss and C _oss
• Best-in-class DPAK R _DS(on) of 280mΩ
• Best-in-class V _(GS)th of 3V and smallest V _(GS)th variation of ± 0.5V
• Integrated Zener diode ESD protection up to Class 2 (HBM)
• Best-in-class quality and reliability
• Fully optimized portfolio

Benefits

• 0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3
• Enabling higher power density designs, BOM savings and lower assembly cost
• Easy to drive and to design-in
• Better production yield by reducing ESD related failures
• Less production issues and reduced field returns
• Easy to select right parts for fine tuning of designs

Potential Applications

• Adapter
• LED
• Audio
• Industrial SMPS
• AUX power

Applications

• 1-phase string inverter solutions
• Consumer electronics
• DIN rail power supplies
• LED strips and signage

Designers who used this product also designed with

• XDPL8221 |
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• ICE3RBR0665JZ |
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• IRF6775M |
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• IRF6775M |
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• ICE3RBR0665JZ |
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• IRF6775M |
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• IRS2092SPBF |
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Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R _onxA and the inherently low gate charge (Q _G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Summary of Features

Efficiency

• 600V P7 enables excellent FOM R _DS(on)xE _oss andR _DS(on)xQ _G

Ease-of-use

• ESD ruggedness of ≥ 2kV (HBM class 2)
• Integrated gate resistor R _G
• Rugged body diode
• Wide portfolio in through hole and surface mount packages
• Both standard grade and industrial grade parts are available

Benefits

Efficiency

• Excellent FOMs R _DS(on)xQ _G/R _DS(on)xE _oss enable higher efficiency

Ease-of-use

• Ease-of-use in manufacturing environments by stopping ESD failures occurring
• Integrated R _G reduces MOSFET oscillation sensitivity
• MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
• Excellent ruggedness during hard commutation of the body diode seen in LLC topology
• Suitable for a wide variety of end applications and output powers
• Parts available suitable for consumer and industrial applications

Potential Applications

• TV power supply
• Industrial SMPS
• Server
• Telecom
• Lighting

Applications

• Adapters and chargers
• Complete system solutions for smart TVs
• Cordless power tools and outdoor power equipment
• Energy Storage Systems
• LED strips and signage

Designers who used this product also designed with

• 1ED3120MC12H |
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• 1EDI20N12AF |
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• 1EDN8511B |
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• 1ED3120MC12H |
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• 1EDI20N12AF |
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1
2

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R _onxA and the inherently low gate charge (Q _G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Summary of Features

Efficiency

• 600V P7 enables excellent FOM R _DS(on)xE _oss andR _DS(on)xQ _G

Ease-of-use

• ESD ruggedness of ≥ 2kV (HBM class 2)
• Integrated gate resistor R _G
• Rugged body diode
• Wide portfolio in through hole and surface mount packages
• Both standard grade and industrial grade parts are available

Benefits

Efficiency

• Excellent FOMs R _DS(on)xQ _G/R _DS(on)xE _oss enable higher efficiency

Ease-of-use

• Ease-of-use in manufacturing environments by stopping ESD failures occurring
• Integrated R _G reduces MOSFET oscillation sensitivity
• MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
• Excellent ruggedness during hard commutation of the body diode seen in LLC topology
• Suitable for a wide variety of end applications and output powers
• Parts available suitable for consumer and industrial applications

Potential Applications

• TV power supply
• Industrial SMPS
• Server
• Telecom
• Lighting

Applications

• Adapters and chargers
• LED lighting system designs
• LED strips and signage
• Telecommunication infrastructure

Designers who used this product also designed with

• 1EDI20I12MF |
  Gate driver ICs
• 2ED2110S06M |
  Gate driver ICs
• 2ED2184S06F |
  Gate driver ICs
• 2EDL23N06PJ |
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• 1ED3120MC12H |
  Gate driver ICs
• 1ED44171N01B |
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• 1EDI20I12MF |
  Gate driver ICs
• 2ED2110S06M |
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• 2ED2184S06F |
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• 2EDL23N06PJ |
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• 1ED3120MC12H |
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• 1ED44171N01B |
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• 1EDI20I12MF |
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• 2ED2110S06M |
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1
2

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R _onxA and the inherently low gate charge (Q _G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Summary of Features

Efficiency

• 600V P7 enables excellent FOM R _DS(on)xE _oss andR _DS(on)xQ _G

Ease-of-use

• ESD ruggedness of ≥ 2kV (HBM class 2)
• Integrated gate resistor R _G
• Rugged body diode
• Wide portfolio in through hole and surface mount packages
• Both standard grade and industrial grade parts are available

Benefits

Efficiency

• Excellent FOMs R _DS(on)xQ _G/R _DS(on)xE _oss enable higher efficiency

Ease-of-use

• Ease-of-use in manufacturing environments by stopping ESD failures occurring
• Integrated R _G reduces MOSFET oscillation sensitivity
• MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
• Excellent ruggedness during hard commutation of the body diode seen in LLC topology
• Suitable for a wide variety of end applications and output powers
• Parts available suitable for consumer and industrial applications

Potential Applications

• TV power supply
• Industrial SMPS
• Server
• Telecom
• Lighting

Applications

• 48 V intermediate bus converter (IBC)
• Complete system solutions for smart TVs
• LED strips and signage
• Light electric vehicles (LEV)

Designers who used this product also designed with

• 1EDI20N12AF |
  Gate driver ICs
• 2ED2184S06F |
  Gate driver ICs
• 2EDL23N06PJ |
  Gate driver ICs
• IRS4427S |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs
• 1EDB8275F |
  Gate driver ICs
• 1EDI20N12AF |
  Gate driver ICs
• 2ED2184S06F |
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• 2EDL23N06PJ |
  Gate driver ICs
• IRS4427S |
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• 2EDR8259X |
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• 1EDB8275F |
  Gate driver ICs
• 1EDI20N12AF |
  Gate driver ICs
• 2ED2184S06F |
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1
2

A new benchmark in efficiency and thermal performance

800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.

This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R _DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.

Summary of Features

• Best-in-class FOM R _DS(on) * E _oss; reduced Q_g, C _iss and C _oss
• Best-in-class DPAK R _DS(on) of 280mΩ
• Best-in-class V _(GS)th of 3V and smallest V _(GS)th variation of ± 0.5V
• Integrated Zener diode ESD protection up to Class 2 (HBM)
• Best-in-class quality and reliability
• Fully optimized portfolio

Benefits

• 0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3
• Enabling higher power density designs, BOM savings and lower assembly cost
• Easy to drive and to design-in
• Better production yield by reducing ESD related failures
• Less production issues and reduced field returns
• Easy to select right parts for fine tuning of designs

Potential Applications

• Adapter
• LED
• Audio
• Industrial SMPS
• AUX power

Applications

• Data center and AI data center solutions
• Edge computing
• LED lighting system designs
• Servo motor drive and control
• Solid-State Circuit Breaker

Designers who used this product also designed with

• BSC040N08NS5 |
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• CDM10VD-4 |
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• IDH08G65C5 |
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• BAS70-04 |
  Schottky Diodes
• BSC040N08NS5 |
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• CDM10VD-4 |
  LED Dimming Interface IC
• IDH08G65C5 |
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• BAS70-04 |
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• BSC040N08NS5 |
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• CDM10VD-4 |
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• IDH08G65C5 |
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• BAS70-04 |
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CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies

The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E _oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.

Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.

Summary of Features

• Reduced switching loss parameters such as Q _G, C _oss, E _oss
• Best-in-class figure of merit Q _G*R _DS(on)
• Increased switching frequency
• Best R _(on)*A in the world
• Rugged body diode

Benefits

• Enables increasing switching frequency without loss in efficiency
• Measure showing key parameter for light load and full load efficiency
• Doubling the switching frequency will half the size of magnetic components
• Smaller packages for same R _DS(on)
• Can be used in many more positions for both hard and soft switching topologies

Potential Applications

• Server
• Telecom
• PC power
• Solar
• Industrial
• USB-PD

Applications

• 48 V intermediate bus converter (IBC)
• DIN rail power supplies
• EV charging
• Smart speaker designs
• Telecommunication infrastructure

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview

Designers who used this product also designed with

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• ICE2QR2280G-1 |
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• 2EDS8165H |
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• IQD009N06NM5CG |
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• IDL10G65C5 |
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• BSC016N06NS |
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• 1ED3124MU12F |
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• 1ED3125MU12F |
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• 2ED2184S06F |
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• 2EDR8259X |
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• IRS4427S |
  Gate driver ICs
• 1EDB8275F |
  Gate driver ICs
• 1ED44173N01B |
  Gate driver ICs
• 2EDB8259Y |
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• IQE006NE2LM5CG |
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• ICE2QR2280G-1 |
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1
2
3
4
5

Optimized power MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R _onxA and the inherently low gate charge (Q _G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Summary of Features

Efficiency

• 600V P7 enables excellent FOM R _DS(on)xE _oss andR _DS(on)xQ _G

Ease-of-use

• ESD ruggedness of ≥ 2kV (HBM class 2)
• Integrated gate resistor R _G
• Rugged body diode
• Wide portfolio in through hole and surface mount packages
• Both standard grade and industrial grade parts are available

Benefits

Efficiency

• Excellent FOMs R _DS(on)xQ _G/R _DS(on)xE _oss enable higher efficiency

Ease-of-use

• Ease-of-use in manufacturing environments by stopping ESD failures occurring
• Integrated R _G reduces MOSFET oscillation sensitivity
• MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
• Excellent ruggedness during hard commutation of the body diode seen in LLC topology
• Suitable for a wide variety of end applications and output powers
• Parts available suitable for consumer and industrial applications

Potential Applications

• TV power supply
• Industrial SMPS
• Server
• Telecom
• Lighting

Applications

• 48 V intermediate bus converter (IBC)
• DIN rail power supplies
• Edge computing
• Light electric vehicles (LEV)
• Washing and drying

Designers who used this product also designed with

• 1ED3125MU12F |
  Gate driver ICs
• 1EDB8275F |
  Gate driver ICs
• 2ED2184S06F |
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• 2EDB8259Y |
  Gate driver ICs
• ICE2QR2280G |
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• IRS4427S |
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• 1ED3125MU12F |
  Gate driver ICs
• 1EDB8275F |
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• 2ED2184S06F |
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• 2EDB8259Y |
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• ICE2QR2280G |
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• IRS4427S |
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• 1ED3125MU12F |
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• 1EDB8275F |
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1
2

CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies

The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E _oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.

Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.

Summary of Features

• Reduced switching loss parameters such as Q _G, C _oss, E _oss
• Best-in-class figure of merit Q _G*R _DS(on)
• Increased switching frequency
• Best R _(on)*A in the world
• Rugged body diode

Benefits

• Enables increasing switching frequency without loss in efficiency
• Measure showing key parameter for light load and full load efficiency
• Doubling the switching frequency will half the size of magnetic components
• Smaller packages for same R _DS(on)
• Can be used in many more positions for both hard and soft switching topologies

Potential Applications

• Server
• Telecom
• PC power
• Solar
• Industrial
• USB-PD

Applications

• 48 V intermediate bus converter (IBC)
• Uninterruptible power supplies (UPS)

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview

Designers who used this product also designed with

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Optimized power MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R _onxA and the inherently low gate charge (Q _G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Summary of Features

Efficiency

• 600V P7 enables excellent FOM R _DS(on)xE _oss andR _DS(on)xQ _G

Ease-of-use

• ESD ruggedness of ≥ 2kV (HBM class 2)
• Integrated gate resistor R _G
• Rugged body diode
• Wide portfolio in through hole and surface mount packages
• Both standard grade and industrial grade parts are available

Benefits

Efficiency

• Excellent FOMs R _DS(on)xQ _G/R _DS(on)xE _oss enable higher efficiency

Ease-of-use

• Ease-of-use in manufacturing environments by stopping ESD failures occurring
• Integrated R _G reduces MOSFET oscillation sensitivity
• MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
• Excellent ruggedness during hard commutation of the body diode seen in LLC topology
• Suitable for a wide variety of end applications and output powers
• Parts available suitable for consumer and industrial applications

Potential Applications

• TV power supply
• Industrial SMPS
• Server
• Telecom
• Lighting

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview

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Infineon’s answer to resonant high power topologies

The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Q_g), improved turn-off behavior and a reverse recovery charge (Q_rr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (t_rr) in the market.

Summary of Features

• Ultra-fast body diode
• Best-in-class reverse recovery charge (Q_rr)
• Improved reverse diode dv/dt and dif/dt ruggedness
• Lowest FOM R_DS(on) x Q_g and E_oss
• Best-in-class R_DS(on)/package combinations

Benefits

• Best-in-class hard commutation ruggedness
• Highest reliability for resonant topologies
• Highest efficiency with outstanding ease-of-use/performance trade-off
• Enabling increased power density solutions

Potential Applications

Server, Telecom, EV-charging, SMPS, PC power

Applications

• 48 V intermediate bus converter (IBC)
• DIN rail power supplies
• Edge computing
• EV charging
• Telecommunication infrastructure

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Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R _onxA and the inherently low gate charge (Q _G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Summary of Features

Efficiency

• 600V P7 enables excellent FOM R _DS(on)xE _oss andR _DS(on)xQ _G

Ease-of-use

• ESD ruggedness of ≥ 2kV (HBM class 2)
• Integrated gate resistor R _G
• Rugged body diode
• Wide portfolio in through hole and surface mount packages
• Both standard grade and industrial grade parts are available

Benefits

Efficiency

• Excellent FOMs R _DS(on)xQ _G/R _DS(on)xE _oss enable higher efficiency

Ease-of-use

• Ease-of-use in manufacturing environments by stopping ESD failures occurring
• Integrated R _G reduces MOSFET oscillation sensitivity
• MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
• Excellent ruggedness during hard commutation of the body diode seen in LLC topology
• Suitable for a wide variety of end applications and output powers
• Parts available suitable for consumer and industrial applications

Potential Applications

• TV power supply
• Industrial SMPS
• Server
• Telecom
• Lighting

Applications

• 48 V intermediate bus converter (IBC)
• DIN rail power supplies
• Energy Storage Systems
• On-board charging (OBC) for electric vehicles

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