Wolfspeed’s CMPA1H1J050F is a 60 W, MMIC HPA utilizing Wolfspeed’s high performance, 0.15um GaN on SiC production process. The CMPA1H1J050F operates from 17.3 – 19.2 GHz and targets both satellite communications and common datalink applications. Under saturation, the CMPA1H1J050F achieves 60 W of typical output with 27 dB of large signal gain and >32% power-added efficiency. At a minimum ACLR level of -30 dBc or better under OQPSK signal modulation, this HPA delivers 25 W of output power with 28 dB of gain and approximately 25% power-added efficiency.

Wolfspeed’s CMPA0060002F is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC employs a distributed (traveling-wave) amplifier design approach, enabling extremely wide bandwidths to be achieved in a small footprint screw-down package featuring a copper-tungsten heat sink.

Wolfspeed’s CMPA1D1E025F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT)-based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.25-μm gate length fabrication process. GaN-on-SiC has superior properties compared to silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage, higher saturated-electron-drift velocity and higher thermal conductivity. This Ku Band MMIC is available in a 10-lead, 25-mm x 9.9-mm, metal/ceramic flanged package for optimal electrical and thermal performance.

• P_AVE = 42 dBm, IM3 = -30 dBc, -33 dBc OQPSK offset
• Class A/B high-gain, high-efficiency, 50-ohm MMIC Ku Band high-power amplifier

Wolfspeed’s CMP2560025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

Wolfspeed’s CMPA0060025D is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables very wide bandwidths.

Wolfspeed’s CMPA0060025F is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables extremely wide bandwidths to be achieved in a small-footprint, screw-down package.

Wolfspeed’s CMPA2560025F is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier, enabling very wide bandwidths to be achieved in a small-footprint, screw-down package featuring a copper-tungsten heat sink.

Wolfspeed’s CMPA601C025D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT)-based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.25-μm gate-length fabrication process. GaN-on-SiC has superior properties compared to silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage, higher saturated electron d-rift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si, GaAs, and GaN-on-Si transistors. This MMIC contains a reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

The CMPA601C025F GaN HEMT MMIC amplifier offers 25 watts of power from 6 to 12 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a thermally enhanced, 10-lead ceramic package. This delivers a high-power 6- to 12-GHz, high-efficiency amplifier in a small-footprint package at 50 ohms.

Wolfspeed’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10-lead metal/ceramic flanged package (CMPA801B025F) or small form-factor pill package (CMPA801B025P) for optimal electrical and thermal performance.

Wolfspeed’s CMP801B025D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

Wolfspeed’s CMPA1D1E030D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) based monolithic-microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.25-μm gate-length fabrication process. GaN-on-SiC has superior properties compared to silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage, higher saturated-electron-drift velocity and higher thermal conductivity.

Wolfspeed’s CMP5585030D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage, reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

Wolfspeed’s CMPA5585030F is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10 lead metal/ceramic flanged package for optimal electrical and thermal performance.

The CMPA901A035F1 is a fully matched MMIC housed in a thermally enhanced air cavity package. Operating at 28V, the device is capable of 40W of CW output power. The device can also be operated under pulse conditions.

• Typical Output Power 40 W
• Typical Power Gain 23 dB
• Typical PAE 35%
• Operation up to 28 V

Applications

• Military Radar
• Marine Radar
• Weather Radar
• Medical Applications

Wolfspeed’s CMPA5259025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency; high gain; and wide bandwidth capabilities; which makes CMPA5259025F ideal for 5.2 – 5.9 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.

Features

• 30 dB Small Signal Gain
• 50% Efficiency at PSAT
• Operation up to 28 V
• High Breakdown Voltage

Applications

• Radar Amplifiers

Wolfspeed’s CMPA1C1D060D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) based monolithic-microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.25-μm gate-length fabrication process. GaN-on-SiC has superior properties compared to silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage, higher saturated-electron-drift velocity and higher thermal conductivity.

Wolfspeed’s CMPA2735075D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

Wolfspeed’s CMPA2735075F is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. This MMIC enables extremely wide bandwidths to be achieved in a small-footprint, screw-down package.

2-W; 20-MHz – 6000-MHz; GaN MMIC Power Amplifier

Wolfspeed’s CMPA0060002 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC employs a distributed (traveling-wave) amplifier design approach, enabling extremely wide bandwidths to be achieved in a small footprint. Available in die and a screw-down package featuring a copper-tungsten heat sink.

25-W, DC – 6.0-GHz, GaN MMIC Power Amplifier

Wolfspeed’s CMPA0060025 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables very wide bandwidths to be achieved in a small-footprint.

The CMPA1C1D080F is a packaged, 90W HPA utilizing Wolfspeed’s high performance, 0.25um GaN on SiC production process. With a 12.75-13.25 GHz operating frequency range targeting satellite communications, the CMPA1C1D080F offers 3rd-order intermodulation performance of -30dBc at 20W of total output power. For exceptional thermal management, the HPA is offered in a bolt-down, flange package.

15 W, 2.7 to 3.5 GHz, 50 V, GaN MMIC Power Amplifier

Wolfspeed’s CMPA2735015 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

30 W, 2.7 - 3.5 GHz, 50-V, GaN MMIC Power Amplifier

Wolfspeed’s CMPA2735030 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

3.1 - 3.5 GHz, 60 W, Packaged GaN MMIC Power Amplifier

Cree’s CMPA3135060S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. This MMIC power amplifier contains a two-stage reactively matched amplifier design approach, enabling high power and power added efficiency to be achieved in a 7mm x 7mm, surface mount (QFN package). The MMIC is designed for S-Band radar power amplifier applications.

50-W; 5200 – 5900-MHz; 28 V; GaN MMIC for Radar Power Amplifiers

Cree’s CMPA5259050 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency; high gain; and wide bandwidth capabilities; which makes CMPA5259050 ideal for 5.2 - 5.9 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.

High power C-band MMIC for pulsed radar operation.

The CMPA5259080S is a high power, two-stage MMIC housed in a QFN package. Operating at 40V and at 25°C case temperature the device achieves over 100W of pulsed output power. The device is designed primarily for use as an output stage for highly integrated AESA radar type architecture with exceptional power capability. In addition, the high gain makes it suitable as a drive stage for a multi-device line-up using the Wolfspeed high power IMFETs as the final stage. The device is designed to operate under long pulse conditions up to 500uS at 10% duty cycle.

30 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier

Wolfspeed’s CMPA801B030 family of X-band MMIC amplifiers operate over the 7.9 – 11 GHz frequency range supporting satellite communications along with both civil and defense-related radar applications. Generating 40W of typical output power, with >20dB of large-signal gain and 40% power-added efficiency, this product family offers high performance across various platforms providing the user flexibility to integrate the right product into their system architecture.

Wolfspeed's CMPA9396025S is a GaN MMIC designed specifically from 9.3-9.6GHz to be compact and provide high-efficiency, which makes it ideal for marine radar amplifier applications. The MMIC delivers 25W at 100usec pulse width and 10% duty cycle. The 50-ohm, 3-stage MMIC is available in a plastic surface-mount package.

2 W, 0.5 - 3.0 GHz, Input Matched No Output Match GaN MMIC for Pre-driver/Driver Amplifier Applications

Cree’s CMPA0530002S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The CMPA0530002S operates on a 28 volt rail while housed in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Under reduced power, the transistor can operate below 28V to as low as 20V VDD, maintaining high gain and efficiency.

130 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT for X-Band Radar Applications

Cree’s CGHV96130F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.

38.5 dBm GaN on SiC Power Amplifier Module, 2496-2690 MHz

The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC technology with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 2496 MHz to 2690 MHz. It uses a supply voltages of up to 50 V at maximum, average output power levels of 6 to 8 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of up to 200 MHz. The device is housed in a 6 mm X 6 mm land grid array (LGA) package.

39.5 dBm GaN on SiC Power Amplifier Module, 3300-3800 MHz

The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 3300 MHz to 3800 MHz, from supply voltages up to 50 V, at average output power levels of 8 to 10 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of 200 MHz or more. The device is housed in a 6 mm X 6 mm land grid array (LGA) package.

39.5 dBm GaN on SiC Power Amplifier Module, 3700-3980 MHz

The WS1A3940 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 3700 MHz to 3980 MHz, from supply voltages up to 50 V, at average output power levels of 8 to 10 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of 200 MHz or more. The device is housed in a 6 mm X 6 mm land grid array (LGA) package.

High Power RF GaN on SiC HEMT, 460 W, 48 V, 1805 – 1880 MHz

The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermallyenhanced package with earless flange.

High Power RF GaN on SiC HEMT, 490 W, 48 V, 2110 – 2170 MHz

The GTRA214602FC is a 490-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.

High Power RF GaN on SiC HEMT 45 W, 48 V, 2515 – 2675 MHz

The GTRA260502M is a 45-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally enhanced, overmold package.

High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz

The GTRA360502M is a 50-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally enhanced, overmold package.

High Power RF GaN on SiC HEMT 235 W, 48 V, 3700 – 4100 MHz

The GTRA412852FC is a 235-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching, high efficiency, and a thermally-enhanced package with earless flange.

High Power RF GaN on SiC HEMT 400 W, 48 V, 2500 – 2700 MHz

The GTRB264318FC is a 400-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features internal matching, high efficiency, and a thermally-enhanced package with earless flange.

High Power RF LDMOS FET, 615 W, 48 V, 730 – 960 MHz

The PTRA084858NF is a 615-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 730 to 960 MHz frequency band. Features include input and output matching, high gain and a thermally-enhanced plastic overmold package for cool and reliable operation. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

High Power RF LDMOS FET, 520 W, 48 V, 925 - 960 MHz

The PTRA095908NB is a 520-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced plastic overmold package with earless flange.

High Power RF LDMOS FET, 800 W, 48 V, 730 – 960 MHz

The PTRA097058NB is a 800-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 730 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

9.0 - 10.0 GHz, 20 W, Packaged GaN MMIC Power Amplifier

Cree’s CMPA901A020S is a packaged, 20W HPA utilizing Cree’s high performance, 0.15um GaN on SiC production process. The CMPA901A020S operates from 9-10 GHz and targets pulsed radar applications such as marine weather radar. With 3 stages of gain, this high performance amplifier provides >30dB of large signal gain, potentially lowering the transmit BOM count, and >50% efficiency to support lower system DC power requirements and simplify system thermal management solutions. Packaged in a small 6x6 mm plastic overmold QFN, the CMPA901A020S also supports reduced board space requirements and highthroughput manufacturing lines.

The PTMC210124MD is a wideband, two-stage, LDMOS integrated power amplifier. It incorporates internal matching for operation from 1805 MHz to 2200 MHz, and dual independent outputs with 6 W of output power each. It is available in a 14-lead plastic overmold package with gull wing leads.

Features

• On-chip matching for broadband operation
• Typical CW performance, 2170 MHz, 28 V, combined outputs
• Output power at P1dB = 12 W
• Gain = 30.5 dB
• Efficiency = 51.9%
• Adjacent channel power = –52 dBc
• Capable of handling 10:1 VSWR @28 V, 12 W (CW) output power
• Integrated ESD protection
• Human Body Model Class 0B (per ANSI/ESDA/JEDEC JS-001)
• Integrated temperature compensation
• Pb-free and RoHS-compliant

The PTGA090304MD is a wideband, two-stage, LDMOS integrated power amplifier. Fabricated with Wolfspeed's 50 V LDMOS process, it incorporates internal matching for operation from 575 MHz to 960 MHz, and dual independent outputs of 15 W each. It is available in a 14-lead plastic overmold package with gull wing leads.

Features

• On-chip matching for broadband operation
• Designed for ultra wideband performance
• Typical CW performance, 960 MHz, 50 V, combined outputs
• Output power at P1dB = 45 dBm
• Output power at P3dB = 45.9 dBm
• Linear Gain at P1dB = 31 dB
• Efficiency at P1dB = 48.1%
• Capable of handling 10:1 VSWR @50 V, 30 W CW output power
• Integrated ESD protection
• Human Body Model Class 1C (per ANSI/ESDA/JEDEC JS-001)
• Integrated temperature compensation
• Pb-free and RoHS compliant

The PTMC210204MD is a wideband, two-stage LDMOS integrated amplifier intended for wideband driver applications. It has internal matching for operation from 1805 to 2200 MHz. It features on-chip matching high efficiency, and dual independent outputs with 20 W of output power each. It is available in a 14-lead plastic overmold package with gull wing leads.

Features

• On-chip matching for broadband operation
• Typical pulsed CW performance, 1990 MHz, 28 V, combined outputs
• Output power at P1dB = 37 W
• Linear Gain = 31.5 dB
• Efficiency = 53.1%
• Capable of handling 10:1 VSWR @28 V, 37 W (CW) output power
• Integrated ESD protection
• Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001)
• Integrated temperature compensation
• Pb-free and RoHS compliant

The PTNC210604MD is a wideband, two-stage, LDMOS integrated power amplifier. It incorporates internal matching for operation from 1805 to 2200 MHz, and dual independent outputs with 20 W and 40 W of output power each. It is available in a 14-lead plastic overmold package with gull wing leads.

Features

• On-chip matching for broadband operation
• Typical CW performance, 2200 MHz, 28 V, combined outputs
• Output power at P3dB = 63 W
• Linear Gain = 28 dB
• Efficiency = 50.5%
• Capable of handling 10:1 VSWR @28 V, 10 W mod avg output power
• Integrated ESD protection
• Human Body Model Class 1A (per ANSI/ESDA/JEDEC JS-001)
• Integrated temperature compensation
• Pb-free and RoHS compliant

The PTMC210204MD is a wideband, two-stage, LDMOS integrated power amplifier. It incorporates internal matching for operation from 1805 MHz to 2200 MHz, and dual independent outputs with 10 W of output power each. It is available in a 14-lead plastic overmold package with gull wing leads.

Features

• On-chip matching for broadband operation
• Typical pulsed CW performance, 1990 MHz, 28 V, combined outputs
• Output power at P1dB = 20.9 W
• Efficiency = 56%
• Gain = 31 dB
• Capable of handling 10:1 VSWR @28 V, 20.9 W (CW) output power
• Integrated ESD protection
• Human Body Model Class 1A (per ANSI/ESDA/JEDEC JS-001)
• Integrated temperature compensation