NPN medium power transistor in a SOT1061 leadless very small Surface-Mounted Device (SMD) plastic package. PNP complement: BC69PA.

Features and benefits

• High current
• Two current gain selections
• High power dissipation capability
• Exposed heatsink for excellent thermal and electrical conductivity
• Leadless very small SMD plastic package with medium power capability
• AEC-Q101 qualified

Applications

• Linear voltage regulators
• Low-side switches
• Battery-driven devices
• Power management
• MOSFET drivers
• Amplifiers

NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.

PNP complement: PHPT60406PY

Features and benefits

• High thermal power dissipation capability
• High temperature applications up to 175 °C
• Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
• High energy efficiency due to less heat generation
• AEC-Q101 qualified.

Applications

• Power management
• Load switch
• Linear mode voltage regulator
• Backlighting applications
• Relay replacement
• Motor drive

NPN power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.

Features and benefits

• High collector current capability I_C and I_CM
• Three current gain selections
• High power dissipation capability
• AEC-Q101 qualified

Applications

• Linear voltage regulators
• MOSFET drivers
• Low-side switches
• Power management
• Amplifiers

PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package.

NPN complement: BSR41

Features and benefits

• High current
• High power dissipation capability
• Exposed heatsink for excellent thermal and electrical conductivity

Applications

• Linear voltage regulators
• High-side switches
• Battery-driven devices
• MOSFET drivers
• Amplifiers

NPN medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device (SMD) plastic package.

Features and benefits

• High collector current capability I_C and I_CM
• Three current gain selections
• High power dissipation capability

Applications

• Linear voltage regulators
• MOSFET drivers
• High-side switches
• Power management
• Amplifiers

NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package

Features and benefits

• High collector current capability I_C and I_CM
• Three current gain selections
• High power dissipation capability

Applications

• Linear voltage regulators
• MOSFET drivers
• Low-side switches
• Battery-driven devices
• Power management
• Amplifiers

PNP medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

Features and benefits

• High collector current capability IC and ICM
• Three current gain selections
• High power dissipation capability
• AEC-Q101 qualified

Applications

• Linear voltage regulators
• MOSFET drivers
• High-side switches
• Power management
• Amplifiers

TIP121 - Power Bipolar Transistor, 5A, 80V, NPN, TO-220AB, Plastic/Epoxy, 3 Pin

Bipolar (BJT) Transistor PNP 80V 10A 40MHz 2W Through Hole TO-220

Bipolar (BJT) Transistor PNP 30V 1.5A 100MHz 500mW Surface Mount SOT-23-3

TRANS 2PNP 20V 6.3A 8SO

TRANS PNP 22V 4A TO126-3

Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

Bipolar (BJT) Transistor NPN 400V 8A 4MHz 40W Through Hole TO-220F-3

Bipolar (BJT) Transistor NPN 400V 4A 70W Through Hole TO-220-3

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 200956-BD1396STU
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 1.5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 500mV @ 50mA, 500mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 40 @ 150mA, 2V
Maximum Power Dissipation: 1.25W
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
Quantity per package: 1,920

Power Bipolar Transistor, 12A I(C), 1-Element, NPN

POWER BJT

TRANS PNP 200V 1A TO-5AA

TRANS NPN 350V 1A TO39