Manufacturer: Infineon Technologies
Win Source Part Number: 016638-IRG4PH50KDPBF
Packaging: Bulk
Mounting: Through Hole
Reverse Recovery Time (trr): 90ns
Input Type: Standard
Gate Charge: 180nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AC
Maximum Current Collector: 45A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 200W
Pulsed Collector Current: 90A
Collector-emitter saturation voltage(Max): 3.5V @ 15V, 24A
Total Switching Energy(Ets): 3.83mJ (on), 1.9mJ (off)
Turn-on and Turn-off delay time: 87ns/140ns
Testing Conditions: 800V, 24A, 5 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited

IGBT Transistors 1200V/15A RC IGBT FSII TO

MOSFET N-CHANNEL 600V

IGBT 600V 55A 200W Through Hole TO-247AC

IGBT, 650 V, 75 A FIELD STOP TRE

IGBT Transistors 650V,75A Field Stop Trench IGBT

IHV-B 3300 V, 1400 A 130 mm single switch IGBT Module with TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode. The experienced solution for traction and industry applications.

Summary of Features

• High DC stability
• Best in class short circuit capability
• Best in class current density
• Low switching losses
• T_{vj op} = 150°C
• V_CEsat with positive temperature coefficient
• AlSiC base plate for increased thermal cycling capability
• Package with CTI > 600
• Isolated base plate

Benefits

• Unbeatable robustness
• Standardized housing
• 2 times higher Power Cycling Capability than Infineon IGBT3 and any competition 3.3 kV IHV
• Enables most compact 1.1 MW liquid cooled inverter, on being 30% smaller than all other devices with similar performance
• 40% higher performance than next best alternative in similar size, enables inverter frame size jump
• Standardized IHV 130 x 140mm housing enables 1:1 replacement to any IHV 190x140mm
• Easy replacement of FZ1500R33HE3 and any competition 1500 to 1800 A 3.3 kV devices possible on high performance and housing compatibility

Applications

• Commercial, construction and agricultural vehicles (CAV)
• Medium voltage (MV) drive
• Motor Control
• Traction
• Uninterruptible power supplies (UPS)

PTD IGBT & IPM

TO-3P IGBTs ROHS

Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 17A, 32A 1W Surface Mount PG-TISON-8

N-Channel 25V 29A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-1

IGBT 400V 7A 29W DPAK

FAIRCHILD SEMICONDUCTOR HGTG5N120BND IGBT Single Transistor, 21 A, 2.7 V, 167 W, 1.2 kV, TO-247, 3 Pins

IGBT 600V 240A 750W TO-274

IGBT 300V 180A 480W TO3P

IGBT 600V 8.5A 38W DPAK

IGBT Transistors 600V ULTRAFAST 10-30KHZ COPACK IGBT

IGBT 600V 11A 28W Through Hole TO-220FP

IGBT MODULE 600V 100A 400W EPM7

IGBT 600V 14A 60W Surface Mount TO-252AA

Manufacturer: Infineon Technologies
Win Source Part Number: 068776-IHP10T120
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 115ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 53nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: PG-TO220-3
Maximum Current Collector: 16A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 138W
Pulsed Collector Current: 24A
Collector-emitter saturation voltage(Max): 2.2V @ 15V, 10A
Total Switching Energy(Ets): 1.46mJ
Turn-on and Turn-off delay time: 45ns/520ns
Testing Conditions: 610V, 10A, 81 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited

IGBT 600V 20A 101W TO220AB

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 087687-FGH40N65UFDTU
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 45ns
IGBT Type: Field Stop
Input Type: Standard
Gate Charge: 120nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 80A
VCEO Maximum Collector-Emitter Breakdown Voltage: 650V
Maximum Power Dissipation: 290W
Pulsed Collector Current: 120A
Collector-emitter saturation voltage(Max): 2.4V @ 15V, 40A
Total Switching Energy(Ets): 1.19mJ (on), 460μJ (off)
Turn-on and Turn-off delay time: 24ns/112ns
Testing Conditions: 400V, 40A, 10 Ohm, 15V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited

IGBT NPT and Trench 1000V 60A 180W Through Hole TO-264-3

Manufacturer: IXYS
Win Source Part Number: 1005453-IXGR40N60B
Packaging: Tube/Rail
Mounting: Through Hole
Input Type: Standard
Gate Charge: 116nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: ISOPLUS247
Maximum Current Collector: 70A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 200W
Pulsed Collector Current: 150A
Collector-emitter saturation voltage(Max): 2.1V @ 15V, 40A
Total Switching Energy(Ets): 2.7mJ (off)
Turn-on and Turn-off delay time: 25ns/180ns
Testing Conditions: 480V, 40A, 4.7 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Sufficient

IGBT NPT 1200V 46A 313W Through Hole PG-TO247-3-1

IGBT MOD 1700V 1200A 3350W

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1016850-AOB15B65M1
Packaging: Reel - TR
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 317ns
Input Type: Standard
Gate Charge: 32nC
Family Name: AOB15B65M1
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-263 (D2Pak)
Maximum Current Collector: 30A
VCEO Maximum Collector-Emitter Breakdown Voltage: 650V
Maximum Power Dissipation: 214W
Pulsed Collector Current: 45A
Collector-emitter saturation voltage(Max): 2.15V @ 15V, 15A
Total Switching Energy(Ets): 290μJ (on), 200μJ (off)
Turn-on and Turn-off delay time: 13ns/116ns
Testing Conditions: 400V, 15A, 20 Ohm, 15V
Alternative Parts (Cross-Reference): RGT30NL65DTL; RGT30NS65DTL; RGT40NL65DTL;
Introduction Date: June 02, 2015
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 90 pct.
Supply and Demand Status: Balance

IGBT, LOW POWER, 600V, 50A, EASYPIM

IGBT 600V 60A 480W Through Hole TO-247-3

IGBT 600V 45A 167W TO247

FAIRCHILD SEMICONDUCTOR HGTG27N120BN IGBT Single Transistor, 72 A, 2.7 V, 500 W, 1.2 kV, TO-247, 3 Pins

DISCONTINUED BY MANUFACTURER, TRANSISTOR, IGBT, 35 AMP, 1200 V, N-CHANNEL. FREE 2 YEAR RADWELL WARRANTY

IGBT 600V 34A 125W Through Hole TO-220-3

IGBT Trench Field Stop 600V 60A 187W Surface Mount PG-TO263-3-2

Infineon IKP08N65H5XKSA1

Infineon IKW30N65H5XKSA1

IGBT 600V 17A 45W TO220FP

IGBT 600V 31A 100W Through Hole TO-247AC

IGBT 600V 34A 100W TO247AC

Manufacturer: Infineon Technologies
Win Source Part Number: 1047317-IRG4PC60U-PPBF
Packaging: Bulk
Mounting: Through Hole
Input Type: Standard
Gate Charge: 310nC
Categories: Discrete Semiconductor Products
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AC
Maximum Current Collector: 75A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 520W
Pulsed Collector Current: 300A
Collector-emitter saturation voltage(Max): 2V @ 15V, 40A
Total Switching Energy(Ets): 280μJ (on), 1.1mJ (off)
Turn-on and Turn-off delay time: 39ns/200ns
Testing Conditions: 480V, 40A, 5 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance

IGBT 1200V 78A 350W Through Hole SUPER-247™ (TO-274AA)

Discrete IGBT with Anti-Parallel Diode

IGBT Transistors 600V 30AD2PAK

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1049045-ISL9V3040P3
Packaging: Tube/Rail
Mounting: Through Hole
Input Type: Logic
Gate Charge: 17nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 21A
VCEO Maximum Collector-Emitter Breakdown Voltage: 430V
Maximum Power Dissipation: 150W
Collector-emitter saturation voltage(Max): 1.6V @ 4V, 6A
Turn-on and Turn-off delay time: -/4.8μs
Testing Conditions: 300V, 1 kOhm, 5V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Quantity per package: 400

IGBT 300V 75A 540W TO247

IGBT 900V 24A 100W TO247AD

IGBT 1200V 50A 250W TO247

Manufacturer: IXYS
Win Source Part Number: 1049622-IXGH40N120C3
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: PT
Input Type: Standard
Gate Charge: 142nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXGH)
Maximum Current Collector: 75A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 380W
Pulsed Collector Current: 200A
Collector-emitter saturation voltage(Max): 4.4V @ 15V, 30A
Total Switching Energy(Ets): 1.8mJ (on), 550μJ (off)
Turn-on and Turn-off delay time: 17ns/130ns
Testing Conditions: 600V, 30A, 3 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient

IGBT Transistors 75Amps 1200V