Our custom and standard planar transformers and inductors serve a wide array of power ranges and operating frequencies ideally suited for electric
vehicle and other critical power applications. Read more...
The GS61004B is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown, high switching frequency and high temperature operation. Read more...More Product Announcements from Richardson RFPD
The GS66508B-EVBDB daughterboard evaluation kits from Richardson RFPD consist of two GaN Systems 650V, 30A GaN enhancement-mode HEMTs (E-HEMTs) and all necessary circuits, including half-bridge gate drivers, isolated power supplies and optional heatsink to form a functional half-bridge power stage. The kits allow users to easily evaluate the GaN E-HEMT performance in any half-bridge topo... Read more...More Product Announcements from Richardson RFPD
Offering amazing performance gains compared to superjunction technologies used today, especially at high speed switching: New 700 V superjunction MOSFET technology developed to serve today’s and tomorrow’s trends in flyback topologies. Read more...More Product Announcements from Infineon Technologies AG