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Richardson RFPD

Engineered mainly for industrial drives, solar power and UPS applications, the low-profile VINco E3 package raises the performance bar with its enhanced power density and reliability. Read more...

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Standex-Meder Electronics

Our custom and standard planar transformers and inductors serve a wide array of power ranges and operating frequencies ideally suited for electric
vehicle and other critical power applications. Read more...

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Richardson RFPD

The GS66508T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. Read more...

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Richardson RFPD

The GS61004B is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown, high switching frequency and high temperature operation. Read more...

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Richardson RFPD

The GS66516T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. Read more...

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Richardson RFPD

The GS66508B-EVBDB daughterboard evaluation kits from Richardson RFPD consist of two GaN Systems 650V, 30A GaN enhancement-mode HEMTs (E-HEMTs) and all necessary circuits, including half-bridge gate drivers, isolated power supplies and optional heatsink to form a functional half-bridge power stage. The kits allow users to easily evaluate the GaN E-HEMT performance in any half-bridge topo... Read more...

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Infineon Technologies AG

Offering amazing performance gains compared to superjunction technologies used today, especially at high speed switching: New 700 V superjunction MOSFET technology developed to serve today’s and tomorrow’s trends in flyback topologies. Read more...

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