From Mound Laser & Photonics Center, Inc.
Laser micromachining of semiconductor materials such as silicon and sapphire has attracted more and more attention in recent years. High precision laser cutting and drilling processes have been successfully used in semiconductor, photonics, optoelectronics, and microelectromechanical system (MEMS) industries for aplications including wafer dicing, scribing, direct via forming, and three-dimensional structuring. In the current study, two Qswitched and one mode-locked diode-pumped solid-state (DPSS) 355 nm lasers have been used to scribe grooves on silicon and sapphire wafer substrates at different pulsewidths (10 ns, 32 ns, and 10 ps) and pulse repetition rates (30 kHz, 40 kHz, 50 kHz, and 80 MHz).
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