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Power Dissipation

 

 

Power dissipation is the total power consumption of a device. Generally, it is expressed in watts or milliwatts. When a transistor conducts current between the collector and emitter, the voltage drops between these two points. At any given time, the power dissipated by a transistor is equal to the product of collector current and collector-emitter voltage. Like resistors, transistors are rated in terms of how many watts they can dissipate safely without sustaining damage. High temperature is the mortal enemy of all semiconductor devices, and bipolar transistors tend to be more susceptible to thermal damage than most. Power ratings are always given in reference to the temperature of ambient (surrounding) air. When transistors are to be used in hotter-than-normal environments, their power ratings must be derated to avoid a shortened service life.

Products & Services
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit. Search by Specification | Learn more about Transistors
Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important. Search by Specification | Learn more about Power MOSFET
Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type. Search by Specification | Learn more about Small-signal Bipolar Transistors (BJT)
Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals. Search by Specification | Learn more about Power Bipolar Transistors
RF bipolar  transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn more about Bipolar RF Transistors
Product Announcements
American Microsemiconductor, Inc. - Bipolar Junction Transistor (BJT)
Bipolar transistors, having 2 junctions, are 3 terminal semiconductor devices. The three terminals of a bipolar transistor are emitter, collector, and base. The transistor can either be a NPN... (read more)
American Microsemiconductor, Inc. - Junction Field Effect Transistor J-FET from AMS
The J-FET (Junction Field Effect Transistor) is a voltage controlled device: that is a small change in input voltage causes a large change in output current. (read more)
M.S. Kennedy Corp. - 4357 - 28 Amp, 3 Phase Motor Drive Hybrid
The MSK 4357 is a 28 Amp, 3 Phase Bridge Smart Power Motor Drive Hybrid with a 500 volt rating. The output switches are Insulated Gate Bipolar Transistors (IGBT's) tailored for high switching speeds. (read more)
American Microsemiconductor, Inc. - AMS: Unijunction Transistor (UJT)
Unijunction Transistor (UJT) from American Microsemiconductor. The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2... (read more)
American Microsemiconductor, Inc. - Unijunction Transistors (UJT's) from AMS
Unijunction Transistor (UJT) from American Microsemiconductor. The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2... (read more)
M.S. Kennedy Corp. - 500 Volt Three Phase BLDC Motor Driver
The new MSK4357 is a 500 volt rated, three-phase, brushless DC motor driver consisting of the bridge, gate drive, control and protect circuitry, all contained in a compact hermetic metal package... (read more)
Electro Rent Corporation - Amplifier Research 20T4G18A
20Watt CW, 4.2-18GHz TWT Microwave Amplifier... (read more)
American Microsemiconductor, Inc. - Programmable Unijunction Transistor known as PUT
(PUT) Programmable Unijunction Transistor from American Microsemiconductor, Inc. Programmable Unijunction Transistor - The PUT is similar to standard Unijunction Transistor except that the breakdown... (read more)
Topics of Interest
Figure 10.1(a) shows an “open-loop,” linear amplifier that uses an NPN bipolar-junction transistor configured as an emitter-follower to provide a controlled voltage across a load. The... (Read More)
9.2.5 MOSFET Rds temperature characteristics and safe operating area limits4,5 The most common failure mode in bipolar transistors—second breakdown—comes about because their on-voltage... (Read More)
A transistor is a three-terminal semiconductor device that is extremely versatile.  In the modern world of today very seldom you will find an electronic device that in some way or another does... (Read More)
Common-emitter current gain or static current gain is expressed as hfe. It is defined as the ratio of the input dc current and the output dc current of the transistor. This parameter is also known as... (Read More)
The MOSFET1,2 is a three-terminal voltage-controlled switch—in contrast to the bipolar transistor, which is three-terminal currentcontrolled switch. In switching power supply circuits, it is... (Read More)
See more product announcements for Transistors
Transistor

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Kendu International Inc.


TGF2021-04-SG & TGF2021-08-SG, 4GHz RF Transistors

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TriQuint Semiconductor, Inc.


Parameter Searching

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American Microsemiconductor, Inc.


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